Substantial P‐Type Conductivity of AlN Achieved via Beryllium Doping von Ahmad, Habib, Lindemuth, Jeff, Engel, Zachary, Matthews, Christopher M., McCrone, Timothy M., Doolittle, William Alan

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Thermal conductance across harmonic-matched epitaxial Al-sapphire heterointerfaces von Cheng, Zhe, Koh, Yee Rui, Ahmad, Habib, Hu, Renjiu, Shi, Jingjing, Liao, Michael E., Wang, Yekan, Bai, Tingyu, Li, Ruiyang, Lee, Eungkyu, Clinton, Evan A., Matthews, Christopher M., Engel, Zachary, Yates, Luke, Luo, Tengfei, Goorsky, Mark S., Doolittle, W. Alan, Tian, Zhiting, Hopkins, Patrick E., Graham, Samuel

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Realization of homojunction PN AlN diodes von Ahmad, Habib, Engel, Zachary, Matthews, Christopher M., Lee, Sangho, Doolittle, W. Alan

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Overcoming metal-rich surface chemistry limitations of ScAlN for high electrical performance heterostructures von Engel, Zachary, Motoki, Keisuke, Matthews, Christopher M., Doolittle, W. Alan

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Cathodoluminescence investigation of defect states in n- and p-type AlN von Matthews, Christopher M., Ahmad, Habib, Hussain, Kamal, Chandrashekhar, M. V. S., Khan, Asif, Doolittle, W. Alan

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p-type AlN based heteroepitaxial diodes with Schottky, Pin, and junction barrier Schottky character achieving significant breakdown performance von Ahmad, Habib, Engel, Zachary, Matthews, Christopher M., Doolittle, W. Alan

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Prospectives for AlN electronics and optoelectronics and the important role of alternative synthesis von Doolittle, W. Alan, Matthews, Christopher M., Ahmad, Habib, Motoki, Keisuke, Lee, Sangho, Ghosh, Aheli, Marshall, Emily N., Tang, Amanda L., Manocha, Pratyush, Yoder, P. Douglas

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Controlling surface adatom kinetics for improved structural and optical properties of high indium content aluminum indium nitride von Engel, Zachary, Clinton, Evan A., Matthews, Christopher M., Doolittle, W. Alan

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Adlayer control for tunable AlGaN self-assembled superlattices von Engel, Zachary, Clinton, Evan A., Motoki, Keisuke, Ahmad, Habib, Matthews, Christopher M., Doolittle, W. Alan

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Comprehensive Analysis of Metal Modulated Epitaxial GaN von Ahmad, Habib, Motoki, Keisuke, Clinton, Evan A, Matthews, Christopher M, Engel, Zachary, Doolittle, W. Alan

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GaN:Be I-Layer-Based High-Power p-i-n Diodes Achieving Large Quasi-Vertical MBE Breakdown Performance von Ahmad, Habib, Engel, Zachary, Ghosh, Aheli, Matthews, Christopher M., Doolittle, W. Alan

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Improved crystallographic order of ScAlN/GaN heterostructures grown at low temperatures under metal rich surface conditions von Motoki, Keisuke, Engel, Zachary, McCrone, Timothy M., Chung, Huijin, Matthews, Christopher M., Lee, Sangho, Marshall, Emily N., Ghosh, Aheli, Tang, Amanda, Doolittle, W. Alan

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Beryllium doped semi-insulating GaN without surface accumulation for homoepitaxial high power devices von Ahmad, Habib, Anderson, Travis J., Gallagher, James C., Clinton, Evan A., Engel, Zachary, Matthews, Christopher M., Alan Doolittle, W.

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Cascaded Ni hard mask to create chlorine-based ICP dry etched deep mesas for high-power devices von Ahmad, Habib, Engel, Zachary, Zia, Muneeb, Weidenbach, Alex S, Matthews, Christopher M, Zivasatienraj, Bill, Bakir, Muhannad S, Doolittle, W Alan

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Publisher’s Note: “Beryllium doped semi-insulating GaN without surface accumulation for homoepitaxial high power devices” [J. Appl. Phys 127, 215703 (2020)] von Ahmad, Habib, Anderson, Travis J., Gallagher, James C., Clinton, Evan A., Engel, Zachary, Matthews, Christopher M., Alan Doolittle, W.

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Self-rated health in a population of expatriate workers and partners in Riyadh,Saudi Arabia von Matthews, Christopher M. T., Nelson, Mark R.

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Kinetic Model for Ternary III-Nitride Epitaxy: The Role of Vertical Segregation on Phase Separation von Matthews, Christopher M., Engel, Zachary, Motoki, Keisuke, Doolittle, W. Alan

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Observation of interfacial strain relaxation and electron beam damage thresholds in Al0.3In0.7N/GaN heterostructures by transmission electron microscopy von Motoki, Keisuke, Engel, Zachary, Matthews, Christopher M., Ahmad, Habib, McCrone, Timothy M., Harada, Kohei, Doolittle, W. Alan

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Structural and electrochemical evolution of alloy interfacial layers in anode-free solid-state batteries von Sandoval, Stephanie Elizabeth, Lewis, John A., Vishnugopi, Bairav S., Nelson, Douglas Lars, Schneider, Matthew M., Cortes, Francisco Javier Quintero, Matthews, Christopher M., Watt, John, Tian, Mengkun, Shevchenko, Pavel, Mukherjee, Partha P., McDowell, Matthew T.

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ALUMINUM NITRIDE-BASED HIGH POWER DEVICES AND METHODS OF MAKING THE SAME von DOOLITTLE, William Alan, MOTOKI, Keisuke, WEIDENBACH, Alex S, AHMAD, Habib, ENGEL, Zachary P, MATTHEWS, Christopher M

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