Two-component model for long-term prediction of threshold voltage shifts in SiC MOSFETs under negative bias stress von Matsumura, Mieko, Kobayashi, Keisuke, Mori, Yuki, Tega, Naoki, Shima, Akio, Hisamoto, Dai, Shimamoto, Yasuhiro

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Direct Observation of Dielectric Breakdown at Step-Bunching on 4H-SiC von Shimamoto, Yasuhiro, Mori, Yuki, Hamamura, Hirotaka, Mine, Toshiyuki, Shima, Akio, Yamada, Renichi, Matsumura, Mieko

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Temperature Dependence of Performance and Hot-Carrier Immunity in Low-Temperature Polycrystalline Silicon Thin-Film Transistors von Matsumura, Mieko, Toyota, Yoshiaki, Hatano, Mutsuko, Ohkura, Makoto

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A Model for Predicting On-Current Degradation Caused by Drain-Avalanche Hot Carriers in Low-Temperature Polysilicon Thin-Film Transistors von Kawamura, T., Matsumura, M., Kaitoh, T., Noda, T., Hatano, M., Miyazawa, T., Ohkura, M.

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On-line preconcentration and enantioselective separation of triadimenol by electrokinetic chromatography using cyclodextrins as chiral selectors von Otsuka, Koji, Matsumura, Mieko, Kim, Jong-Bok, Terabe, Shigeru

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The Role of Glucan-Binding Proteins in the Cariogenicity of Streptococcus mutans von Matsumura, Mieko, Izumi, Tomohiro, Matsumoto, Michiyo, Tsuji, Masato, Fujiwara, Taku, Ooshima, Takashi

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Post-Annealing Effects on a Laterally Grown Polycrystalline Silicon Layer von Tai, Mitsuharu, Sato, Takeshi, Matsumura, Mieko, Ohkura, Makoto, Hatano, Mutsuko

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Properties of SiGe Films Fabricated by Reactive Thermal Chemical Vapor Deposition Using Lamp Heating von Wakagi, Masatoshi, Suzumura, Isao, Kagatsume, Akiko, Asanuma, Haruhiko, Nishimura, Etsuko, Matsumura, Mieko, Hosoi, Tsutomu, Hanna, Jun-ichi

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Analysis of the Hysteresis Behavior in Poly-Si TFTs Using On-the-Fly Measurement von Kawamura, Tetsufumi, Uchida, Hisatoshi, Matsumura, Mieko, Kageyama, Hiroshi, Hatano, Mutsuko

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Negative-Capacitance Effect in Forward-Biased Metal Oxide Semiconductor Tunnel Diodes (MOSTD) von Matsumura, Mieko, Hirose, Yutaka

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Extraction of the Capacitance of a Metal Oxide Semiconductor Tunnel Diode (MOSTD) Biased in Accumulation von Matsumura, Mieko, Hirose, Yutaka

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P-9: Unified Model and Prediction Technique for On-Current Degradation Caused by Drain-Avalanche Hot Carriers in Low-Temperature Poly-Silicon Thin-Film Transistors von Kawamura, Tetsufumi, Matsumura, Mieko, Hatano, Mutsuko, Kaitoh, Takuo, Noda, Takeshi, Miyazawa, Toshio, Ohkura, Makoto

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High Reliability and Performance Poly-Si TFTs for System in Displays von Hatano, Mutsuko, Matsumura, Mieko, Toyota, Yoshiaki, Tai, Mitsuharu, Hamamura, Hirotaka, Miyazawa, Toshio, Ohkura, Makoto

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Effects of post-oxidation annealing on 3nm-thick low-temperature-grown gate oxide von Sakoda, Tomoyuki, Matsumura, Mieko, Nishioka, Yasushiro

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Degradation Characteristics of n- and p-Channel Polycrystalline-Silicon TFTs Under CMOS Inverter Operation von Toyota, Y., Matsumura, M., Hatano, M., Shiba, T., Ohkura, M.

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Interfacial Layer in Thermally-grown Ultra thin Silicon Dioxides Measured by Grazing Incidence X-Ray Reflection von Matsumura, Mieko, Sakoda, Tomoyuki, Nishioka, Yasushiro

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The effectiveness of a newly designed toothbrush on dental plaque removal in children von Sasaki, Hidekazu, Matsumura, Mieko, Sakashita, Suguru, Tsuji, Masato, Matsumoto, Michiyo, Ooshima, Takashi

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High On/Off-Current Ratio in Bottom-Gated Microcrystalline-Silicon Thin-Film Transistors With Vertical-Offset Structure von Toyota, Yoshiaki, Matsumura, Mieko, Suzumura, Isao, Kaitoh, Takuo, Gotoh, Jun, Ohkura, Makoto

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High-Quality CVD SiO2 interfacial layer prepared by cyclic deposition with O2 plasma treatment von Hamamura, Hirotaka, Matsumura, Mieko, Mine, Toshiyuki, Torii, Kazuyoshi

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Subthreshold properties of TFTs with laser-crystallized laterally grown polysilicon layers von Matsumura, M., Hatano, M., Kaitoh, T., Ohkura, M.

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