Formation of GeSn alloy on Si(100) by low-temperature molecular beam epitaxy von Talochkin, A. B., Mashanov, V. I.

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Reflection high energy electron diffraction studies on SixSnyGe1−x−y on Si(100) molecular beam epitaxial growth von Nikiforov, A.I., Mashanov, V.I., Timofeev, V.A., Pchelyakov, O.P., Cheng, H.-H.

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Fabrication of conducting GeSi/Si micro- and nanotubes and helical microcoils von Golod, S V, Prinz, V Ya, Mashanov, V I, Gutakovsky, A K

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Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures von Timofeev, V A, Nikiforov, A I, Tuktamyshev, A R, Mashanov, V I, Loshkarev, I D, Bloshkin, A A, Gutakovskii, A K

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Investigation of infrared photoluminescence spectra of Ge1-x-ySixSny/Si nanostructures von Kolyada, D V, Karaborchev, A A, Firsov, D D, Mashanov, V I, Timofeev, V A, Komkov, O S

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Photoconductivity of ultra-thin Ge(GeSn) layers grown in Si by low-temperature molecular beam epitaxy von Talochkin, A. B., Chistokhin, I. B., Mashanov, V. I.

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Elastically stressed pseudomorphic SiSn island array formation with a pedestal on the Si(1 0 0) substrate using Sn as a growth catalyst von Nikiforov, A.I., Timofeev, V.A., Mashanov, V.I., Gavrilova, T.A., Gulyaev, D.V.

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Sn – Induced decomposition of SiGeSn alloys grown on Si by molecular-beam epitaxy von Talochkin, A.B., Timofeev, V.A., Gutakovskii, A.K., Mashanov, V.I.

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Structural and Optical Properties of a Hybrid Material Based on Tin Oxides and Multilayer Periodic Structures with Pseudomorphic GeSiSn Layers von Timofeev, V. A., Mashanov, V. I., Nikiforov, A. I., Loshkarev, I. D., Skvortsov, I. V., Gulyaev, D. V., Korolkov, I. V., Kolyada, D. V., Firsov, D. D., Komkov, O. S.

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Sn influence on MBE growth of GeSiSn/Si MQW von Tuktamyshev, A R, Timofeev, V A, Nikiforov, A I, Mashanov, V I, Gutakovskii, A K, Baydakova, N A

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Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands von Esin, M. Yu, Nikiforov, A. I., Timofeev, V. A., Tuktamyshev, A. R., Mashanov, V. I., Loshkarev, I. D., Deryabin, A. S., Pchelyakov, O. P.

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Self-assembled strained GeSiSn nanoscale structures grown by MBE on Si(100) von Nikiforov, A.I., Timofeev, V.A., Tuktamyshev, A.R., Yakimov, A.I., Mashanov, V.I., Gutakovskii, A.K.

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Morphology, Structure, and Optical Properties of SnO (x) Films von Nikiforov, A. I., Timofeev, V. A., Mashanov, V. I., Azarov, I. A., Loshkarev, I. D., Korol’kov, I. V., Gavrilova, T. A., Esin, M. Yu

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Strained multilayer structures with pseudomorphic GeSiSn layers von Timofeev, V. A., Nikiforov, A. I., Tuktamyshev, A. R., Yesin, M. Yu, Mashanov, V. I., Gutakovskii, A. K., Baidakova, N. A.

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Effect of a Stepped Si(100) Surface on the Nucleation Process of Ge Islands von Yesin, M. Yu, Nikiforov, A. I., Timofeev, V. A., Mashanov, V. I., Tuktamyshev, A. R., Loshkarev, I. D., Pchelyakov, O. P.

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Investigation of Ge1-xSnx/Ge with high Sn composition grown at low-temperature von Yu, I. S., Wu, T. H., Wu, K. Y., Cheng, H. H., Mashanov, V. I., Nikiforov, A. I., Pchelyakov, O. P., Wu, X. S.

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Solid solutions GeSi grown by MBE on a low temperature Si (001) buffer layer: specific features of plastic relaxation von Bolkhovityanov, Yu.B, Gutakovskii, A.K, Mashanov, V.I, Pchelyakov, O.P, Revenko, M.A, Sokolov, L.V

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Growth of Epitaxial SiSn Films with High Sn Content for IR Converters von Timofeev, V. A., Nikiforov, A. I., Kokhanenko, A. P., Tuktamyshev, A. R., Mashanov, V. I., Loshkarev, I. D., Novikov, V. A.

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Synthesis of Epitaxial Films Based on Ge–Si–Sn Materials with Ge/GeSn, Ge/GeSiSn, and GeSn/GeSiSn Heterojunctions von Timofeev, V. A., Kokhanenko, A. P., Nikiforov, A. I., Mashanov, V. I., Tuktamyshev, A. R., Loshkarev, I. D.

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Directional-rolling method for strained SiGe/Si films and its application to fabrication of hollow needles von Golod, S.V., Prinz, V.Ya, Mashanov, V.I.

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