Effects of post annealing on in-situ n-doped Ge-on-Si von Kumazawa, Yuta, Xu, Xuejun, Maruizumi, Takuya, Sawano, Kentarou

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Highly n-doped, tensile-strained Ge grown on Si by molecular beam epitaxy von Nishida, Keisuke, Xu, Xuejun, Sawano, Kentarou, Maruizumi, Takuya, Shiraki, Yasuhiro

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Resonant light emission from uniaxially tensile-strained Ge microbridges von Zhou, Peiji, Xu, Xuejun, Matsushita, Sho, Sawano, Kentarou, Maruizumi, Takuya

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Enhancement of light emission from Ge quantum dots by photonic crystal nanocavities at room-temperature von Xu, Xuejun, Usami, Noritaka, Maruizumi, Takuya, Shiraki, Yasuhiro

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Ultralarge transient optical gain from tensile-strained, n-doped germanium on silicon by spin-on dopant diffusion von Xu, Xuejun, Wang, Xiaoxin, Nishida, Keisuke, Takabayashi, Koki, Sawano, Kentarou, Shiraki, Yasuhiro, Li, Haofeng, Liu, Jifeng, Maruizumi, Takuya

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Enhanced light emission from germanium microdisks on silicon by surface passivation through thermal oxidation von Xu, Xuejun, Hashimoto, Hideaki, Sawano, Kentarou, Nohira, Hiroshi, Maruizumi, Takuya

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(Invited) Straining of Group IV Semiconductor Materials for Bandgap and Mobility Engineering von Sawano, Kentarou, Xu, Xuejun, Konoshima, Shiori, Shitara, Nayuta, Ohno, Takeshi, Maruizumi, Takuya

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Enhanced 1524-nm Emission From Ge Quantum Dots in a Modified Photonic Crystal L3 Cavity von Yong Zhang, Cheng Zeng, Danping Li, Zengzhi Huang, Kezheng Li, Jinzhong Yu, Juntao Li, Xuejun Xu, Maruizumi, Takuya, Jinsong Xia

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Activated boron and its concentration profiles in heavily doped Si studied by soft x-ray photoelectron spectroscopy and Hall measurements von Tsutsui, Kazuo, Matsuda, Toru, Watanabe, Masamitsu, Jin, Cheng-Guo, Sasaki, Yuichiro, Mizuno, Bunji, Ikenaga, Eiji, Kakushima, Kuniyuki, Ahmet, Parhat, Maruizumi, Takuya, Nohira, Hiroshi, Hattori, Takeo, Iwai, Hiroshi

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High-Quality-Factor Light-Emitting Diodes with Modified Photonic Crystal Nanocavities Including Ge Self-Assembled Quantum Dots on Silicon-On-Insulator Substrates von Xu, Xuejun, Chiba, Taichi, Nakama, Tatsuya, Maruizumi, Takuya, Shiraki, Yasuhiro

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Interface structures generated by negative-bias temperature instability in Si/SiO2 and Si/SiOxNy interfaces von Ushio, Jiro, Maruizumi, Takuya, Kushida-Abdelghafar, Keiko

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Simulation of dislocation accumulation in ULSI cells during the formation of thermal oxide film von SATO, Michihiro, OHASHI, Tetsuya, OIKAWA, Toru, MARUIZUMI, Takuya

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(Invited) Electroluminescence from Micro-Cavities of Photonic Crystals, Micro-Disks and Rings Including Ge Dots Formed on SOI Substrates von Shiraki, Yasuhiro, Xu, Xuejun, Xia, Jinsong, Tsuboi, Toshiki, Maruizumi, Takuya

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Stable position of a B12 cluster near the Si surface and its STM images von Ito, Shunsuke, Maruizumi, Takuya, Suwa, Yuji

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Highly n-doped germanium-on-insulator microdisks with circular Bragg gratings von Xu, Xuejun, Hashimoto, Hideaki, Sawano, Kentarou, Maruizumi, Takuya

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Ge quantum dots light-emitting devices von XIA, Jinsong, MARUIZUMI, Takuya, SHIRAKI, Yasuhiro

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Simulation of Dislocation Accumulation in ULSI Cells of Reduced Gate Length von Aikawa, Keisuke, Maruizumi, Takuya, Kitagawa, Isao, Sato, Michihiro, Ohashi, Tetsuya

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Subnitride and valence band offset at Si3N4∕Si interface formed using nitrogen-hydrogen radicals von Higuchi, Masaaki, Sugawa, Shigetoshi, Ikenaga, Eiji, Ushio, Jiro, Nohira, Hiroshi, Maruizumi, Takuya, Teramoto, Akinobu, Ohmi, Tadahiro, Hattori, Takeo

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Room-temperature electroluminescence from Si microdisks with Ge quantum dots von Xia, Jinsong, Takeda, Yuuki, Usami, Noritaka, Maruizumi, Takuya, Shiraki, Yasuhiro

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Waveguide-integrated microdisk light-emitting diode and photodetector based on Ge quantum dots von Xu, Xuejun, Maruizumi, Takuya, Shiraki, Yasuhiro

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