Mutual passivation of electrically active and isovalent impurities von Yu, K.M., Walukiewicz, W., Wu, J., Mars, D.E., Chamberlin, D.R., Scarpulla, M.A., Dubon, O.D., Geisz, J.F.

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Design and analysis of double-fused 1.55-μm vertical-cavity lasers von BABIC, D. I, PIPREK, J, STREUBEL, K, MIRIN, R. P, MARGALIT, N. M, MARS, D. E, BOWERS, J. E, HU, E. L

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Low-resistance tunnel junctions on GaAs substrates using GaInNAs von Mars, D. E., Chang, Y.-L., Leary, M. H., Roh, S. D., Chamberlin, D. R.

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Second-harmonic generation from GaAs/AlAs vertical cavity von Nakagawa, S., Yamada, N., Mikoshiba, N., Mars, D. E.

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Mutual passivation of group IV donors and isovalent nitrogen in diluted GaNxAs1−x alloys von Yu, K.M., Wu, J., Walukiewicz, W., Shan, W., Beeman, J.W., Mars, D.E., Chamberlin, D.R, Scarpulla, M.A., Dubon, O.D., Ridgway, M.C., Geisz, J.F.

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Anomalies in MODFET's with a low-temperature buffer von Lin, B.J.-F., Kocot, C.P., Mars, D.E., Jaeger, R.

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Redox potentials in relation to water levels in different mire types in the Netherlands and Poland von Mars, H. de, Wassen, M.J

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Mutual passivation of group IV donors and nitrogen in diluted GaNxAs1−x alloys von Yu, K. M., Walukiewicz, W., Wu, J., Shan, W., Beeman, J. W., Scarpulla, M. A., Dubon, O. D., Ridgway, M. C., Mars, D. E., Chamberlin, D. R.

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A 50 GHz broad-band monolithic GaAs/AlAs resonant tunneling diode trigger circuit von Long Yang, Draving, S.D., Mars, D.E., Tan, M.R.T.

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Enhancement of nonradiative interface recombination in GaAs coupled quantum wells von KRAHL, M, BIMBERG, D, BAUER, R. K, MARS, D. E, MILLER, J. N

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InGaAs(0.98 μm)/GaAs vertical cavity surface emitting laser grown by gas-source molecular beam epitaxy von Houng, Y.M., Tan, M.R.T., Liang, B.W., Wang, S.Y., Yang, L., Mars, D.E.

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Zero-field time-of-flight characterization of minority-carrier transport in heavily carbon-doped GaAs von COLOMB, C. M, STOCKMAN, S. A, GARDNER, N. F, CURTIS, A. P, STILLMAN, G. E, LOW, T. S, MARS, D. E, DAVITO, D. B

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Polymorphisms in the vitamin D receptor gene are associated with muscle strength in men and women von WINDELINCKX, A, DE MARS, G, BEUNEN, G, AERSSENS, J, DELECLUSE, C, LEFEVRE, J, THOMIS, M. A. I

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Space-charge recombination in N-AlGaAs/p+-GaAs heterojunction diodes von LOW, T. S, MARS, D. E

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Inequivalent impurity and trap incorporation at normal and inverted interfaces of AlGaAs/ GaAs quantum wells grown by molecular beam epitaxy von KÖHRBRÜCK, R, MUNNIX, S, BIMBERG, D, MARS, D. E, MILLER, J. N

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A 23.6 GHz sub-half-micrometer E/D MODFET divide-by-32/64 static prescaler von Rohdin, H., Straznicky, J., Jekat, H., Nagy, A., Fischer-Colbrie, A., Mars, D.E., Jaeger, R.

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Fabrication of GaNxAs1-x Quantum Structures by Focused Ion Beam Patterning von Alberi, K, Minor, A, Scarpulla, M A, Chung, S J, Mars, D E, Yu, K M, Walukiewicz, W, Dubon, O D

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Reduction of trap concentration and interface roughness of GaAs-AlGaAs quantum wells by low growth rates in molecular beam epitaxy von MAIERHOFER, C, MUNNIX, S, BIMBERG, D, BAUER, R. K, MARS, D. E, MILLER, J. N

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Analysis of wafer fusing for 1.3 μm vertical cavity surface emitting lasers von RAM, R. J, YANG, L, NAUKA, K, HOUNG, Y. M, LUDOWISE, M, MARS, D. E, DUDLEY, J. J, WANG, S. Y

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Growth of vertical cavity surface emitting laser material on (3 1 1)B GaAs by MBE von Mars, D.E., Rosner, S.J., Kaneko, Y., Nakagawa, S., Takeuchi, T., Yamada, N.

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