Diameter dependent transport properties of gallium nitride nanowire field effect transistors von Motayed, Abhishek, Vaudin, Mark, Davydov, Albert V., Melngailis, John, He, Maoqi, Mohammad, S. N.

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Realization of reliable GaN nanowire transistors utilizing dielectrophoretic alignment technique von Motayed, Abhishek, He, Maoqi, Davydov, Albert V., Melngailis, John, Mohammad, S. N.

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Electronic and Structural Characteristics of Zinc-Blende Wurtzite Biphasic Homostructure GaN Nanowires von Jacobs, Benjamin W, Ayres, Virginia M, Petkov, Mihail P, Halpern, Joshua B, He, Maoqi, Baczewski, Andrew D, McElroy, Kaylee, Crimp, Martin A, Zhang, Jiaming, Shaw, Harry C

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Growth of GaN nanowires by direct reaction of Ga with NH3 von MAOQI HE, PEIZHEN ZHOU, NOOR MOHAMMAD, S, HARRIS, Gary L, HALPERN, Joshua B, JACOBS, Randy, SARNEY, Wendy L, SALAMANCA-RIBA, Lourdes

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Simple model for dielectrophoretic alignment of gallium nitride nanowires von Motayed, Abhishek, He, Maoqi, Davydov, Albert V., Melngailis, John, Mohammad, S. N.

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Gallium Nitride Nanowire Devices - Fabrication, Characterization, and Simulation von Motayed, A., Davydov, A.V., Maoqi He, Mohammad, S.N.

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Novelty and versatility of self-catalytic nanowire growth: A case study with InN nanowires von He, Maoqi, Noor Mohammad, S.

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365 nm operation of n -nanowire/ p -gallium nitride homojunction light emitting diodes von Motayed, Abhishek, Davydov, Albert V., He, Maoqi, Mohammad, S. N., Melngailis, John

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Novel chemical-vapor deposition technique for the synthesis of high-quality single-crystal nanowires and nanotubes von He, Maoqi, Mohammad, S. Noor

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Growth of large-scale GaN nanowires and tubes by direct reaction of Ga with NH3 von He, Maoqi, Minus, Indira, Zhou, Piezhen, Mohammed, S. Noor, Halpern, Joshua B., Jacobs, Randy, Sarney, Wendy L., Salamanca-Riba, Lourdes, Vispute, R. D.

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Structural characteristics of single-crystal nanowires grown by self-catalytic chemical vapor deposition method von He, Maoqi, Noor Mohammad, S.

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Phase separations of single-crystal nanowires grown by self-catalytic chemical vapor deposition method von He, Maoqi, Motayed, Abhishek, Noor Mohammad, S.

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Photochemistry of Cyanoacetylene at 193.3 nm von Seki, Kanekazu, He, Maoqi, Liu, Renzhang, Okabe, Hideo

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Diameter dependent transport properties of gallium nitride nanowirefield effect transistors von Motayed, Abhishek, Vaudin, Mark, Davydov, Albert V., Melngailis, John, He, Maoqi, Mohammad, S. N.

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InAs nanowires and whiskers grown by reaction of indium with GaAs von He, Maoqi, Fahmi, M. M. E., Mohammad, S. Noor, Jacobs, Randolph N., Salamanca-Riba, Lourdes, Felt, Frederick, Jah, Muzar, Sharma, Ashok, Lakins, Darryl

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Systematic study of effects of growth conditions on the (nano-, meso-, micro)size and (one-, two-, three-dimensional) shape of GaN single crystals grown by a direct reaction of Ga... von ElAhl, Aya Moustafa Sayed, He, Maoqi, Zhou, Peizhen, Harris, G. L., Salamanca-Riba, Lourdes, Felt, Frederick, Shaw, Harry C., Sharma, Ashok, Jah, Muzar, Lakins, Darryl, Steiner, Todd, Mohammad, S. Noor

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Electron transport in zinc-blende wurtzite biphasic gallium nitride nanowires and GaNFETs von Jacobs, B W, Ayres, V M, Stallcup, R E, Hartman, A, Tupta, M A, Baczewski, A D, Crimp, M A, Halpern, J B, He, M, Shaw, H C

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The aggregate structure of coralloid ZnOx films von Zhu, Yihua, Yang, Qing, Pan, Xiaoren, Ren, Zhongming, He, Maoqi

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Reaction rates of the CN radical with diacetylene and dicyanoacetylene von Seki, Kanekazu, Yagi, Mikio, He, Maoqi, Halpern, Joshua B., Okabe, Hideo

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Growth of GaN nanowires by direct reaction of Ga with NH 3 von He, Maoqi, Zhou, Peizhen, Mohammad, S.Noor, Harris, Gary L., Halpern, Joshua B., Jacobs, Randy, Sarney, Wendy L., Salamanca-Riba, Lourdes

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