A Deep Cutoff Capacitance Model for GaN Switch HEMTs von Huang, Lei, Mao, Shuman, Tang, Min, Xu, Yuehang

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An Improved Noise Modeling Method Using a Quasi-Physical Zone Division Model for AlGaN/GaN HEMTs von Mao, Shuman, Xu, Ruimin, Yan, Bo, Xu, Yuehang

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Investigation of Bending-Induced Degradation of Flexible AlGaN/GaN HEMTs von Wang, Yan, Zheng, Wenhao, Mao, Shuman, Yan, Bo, Wu, Qingzhi, Xu, Yuehang

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Bendable Microwave AlGaN/GaN High-Electron-Mobility Transistor With Output Power Density of 2.65 W/mm von Wang, Yan, Wu, Qingzhi, Mao, Shuman, Xu, Ruimin, Yan, Bo, Xu, Yuehang

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Hydrogen-Terminated Diamond Field-Effect Transistors With 1011 ON/ OFF Ratio Using an Al2O3/HfO2 Stacked Passivation Layer von Chen, Zhihao, Yu, Xinxin, Mao, Shuman, Zhou, Jianjun, Kong, Yuechan, Chen, Tangsheng, Xu, Ruimin, Yan, Bo, Xu, Yuehang

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Degradation Mechanisms of Hydrogen-Terminated Diamond MISFETs Under Off-State Stress Conditions von Chen, Zhihao, Yu, Xinxin, Mao, Shuman, Zhou, Jianjun, Kong, Yuechan, Chen, Tangsheng, Xu, Ruimin, Yan, Bo, Xu, Yuehang

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A parameter extraction method for InP HBT small‐signal model considering emitter–collector laminated capacitance effect von Su, Xiang, Mao, Shuman, Wang, Yutong, Tang, Min, Yan, Bo, Xu, Yuehang

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A Yield-Improvement Method for Millimeter-Wave GaN MMIC Power Amplifier Design Based on Load-Pull Analysis von Mao, Shuman, Zhang, Wei, Yao, Yuan, Yu, Xuming, Tao, Hongqi, Guo, Fangjin, Ren, Chunjiang, Chen, Tangsheng, Zhang, Bin, Xu, Ruimin, Yan, Bo, Xu, Yuehang

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Characterization of Substrate-Trap Effects in Hydrogen-Terminated Diamond Metal-Oxide-Semiconductor Field-Effect Transistors von Chen, Zhihao, Yu, Xinxin, Zhou, Jianjun, Mao, Shuman, Kong, Yuechan, Chen, Tangsheng, Xu, Ruimin, Yan, Bo, Xu, Yuehang

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Physics‐based compact models of GaN HEMTs for high power RF applications: A review (Invited Paper) von Mao, Shuman, Su, Xiang, Wu, Qingzhi, Wang, Yan, Duan, Xiangyang, Tian, Shen, Li, Xuehuan, Xu, Yuehang

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Negative constant voltage stress-induced threshold voltage instability in hydrogen-terminated diamond MOSFETs with low-temperature deposited Al2O3 von Chen, Zhihao, Yu, Xinxin, Zhou, Jianjun, Mao, Shuman, Fu, Yu, Yan, Bo, Xu, Ruimin, Kong, Yuechan, Chen, Tangsheng, Li, Yanrong, Xu, Yuehang

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Investigation on the I⁻V Kink Effect in Large Signal Modeling of AlGaN/GaN HEMTs von Mao, Shuman, Xu, Yuehang

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A scalable electrothermal model using a three‐dimensional thermal analysis model for GaN‐on‐diamond high‐electron‐mobility transistors von Li, Youda, Mao, Shuman, Fu, Yu, Xu, Ruiming, Yan, Bo, Zhang, Yong, Xu, Yuehang

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An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MM... von Li, Junfeng, Mao, Shuman, Xu, Yuehang, Zhao, Xiaodong, Wang, Weibo, Guo, Fangjing, Zhang, Qingfeng, Wu, Yunqiu, Zhang, Bing, Chen, Tangsheng, Yan, Bo, Xu, Ruimin, Li, Yanrong

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Hydrogen-Terminated Diamond Field-Effect Transistors With 10 11 ON/ OFF Ratio Using an Al 2 O 3 /HfO 2 Stacked Passivation Layer von Chen, Zhihao, Yu, Xinxin, Mao, Shuman, Zhou, Jianjun, Kong, Yuechan, Chen, Tangsheng, Xu, Ruimin, Yan, Bo, Xu, Yuehang

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Agile Beamwidth Control and Directivity Enhancement for Aperture Radiation With Low-Profile Metasurfaces von Xiong, Jiang, Hu, Yifeng, Mao, Shuman, Zhang, Weiquan, Xiao, Shaoqiu, Wang, Bing-Zhong

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High Frequency Noise Model of AlGaN/GaN HEMTs von Mao, Shuman, Xu, Yuehang, Chen, Yongbo, Fu, Wenli, Zhao, Xiaodong, Xu, Ruimin

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Yield load pull system-based IC design method and system thereof von Wu, Yunqiu, Mao, Shuman, Xu, Yuehang

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Load traction-based dessert search method, electronic device and storage medium von XU YUEHANG, MAO SHUMAN

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Transistor physical base trap effect model parameter extraction method von XU YUEHANG, MAO SHUMAN

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