Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods von Kim, Jinwoo, Kim, Seokhoon, Kang, Hyunseok, Choi, Jihoon, Jeon, Hyeongtag, Cho, Mannho, Chung, Kwunbum, Back, Sungkwun, Yoo, Kyungdong, Bae, Choelhwyi

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Composition, structure, and electrical characteristics of Hf O 2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods von Kim, Jinwoo, Kim, Seokhoon, Kang, Hyunseok, Choi, Jihoon, Jeon, Hyeongtag, Cho, Mannho, Chung, Kwunbum, Back, Sungkwun, Yoo, Kyungdong, Bae, Choelhwyi

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A ferromagnetic topological insulator junction using the constituent elements of the topological insulator as a buffer von MANNHO CHO, JONGHOON KIM, JEONG KWANGSIK

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Electronic device including topological insulator and transition metal oxide von Ko, DaeHong, Lim, DongHyeok, Kim, TaeHyeon, Jeong, KwangSik, Cho, MannHo

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Reversible Phase Transition in Gete through Resonance Bond Swiching von Cho, Mannho, Yang, Wonjun, Kim, Dasol, Park, Seungjong, Ahn, Min, Han, JeongHwa, Jung, Hoon

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ELECTRONIC DEVICE INCLUDING TOPOLOGICAL INSULATOR AND TRANSITION METAL OXIDE von KO DaeHong, KIM TaeHyeon, JEONG KwangSik, CHO MannHo, LIM DongHyeok

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