Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide Passivation von Hong, M., Kwo, J., Kortan, A. R., Mannaerts, J. P., Sergent, A. M.

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Optical properties of gallium oxide thin films von Rebien, M., Henrion, W., Hong, M., Mannaerts, J. P., Fleischer, M.

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GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition von Ye, P.D., Wilk, G.D., Kwo, J., Yang, B., Gossmann, H.-J.L., Frei, M., Chu, S.N.G., Mannaerts, J.P., Sergent, M., Hong, M., Ng, K.K., Bude, J.

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Thermodynamic stability of Ga2O3(Gd2O3)∕GaAs interface von Huang, Y. L., Chang, P., Yang, Z. K., Lee, Y. J., Lee, H. Y., Liu, H. J., Kwo, J., Mannaerts, J. P., Hong, M.

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Quasistatic and high frequency capacitance–voltage characterization of Ga2O3–GaAs structures fabricated by in   situ molecular beam epitaxy von Passlack, M., Hong, M., Mannaerts, J. P.

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Thin single-crystal Sc2O3 films epitaxially grown on Si (111)-structure and electrical properties von CHEN, C. P, HONG, M, KWO, J, CHENG, H. M, HUANG, Y. L, LIN, S. Y, CHI, J, LEE, H. Y, HSIEH, Y. F, MANNAERTS, J. P

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Ga2O3 films for electronic and optoelectronic applications von Passlack, M., Schubert, E. F., Hobson, W. S., Hong, M., Moriya, N., Chu, S. N. G., Konstadinidis, K., Mannaerts, J. P., Schnoes, M. L., Zydzik, G. J.

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Advances in high κ gate dielectrics for Si and III–V semiconductors von Kwo, J., Hong, M., Busch, B., Muller, D.A., Chabal, Y.J., Kortan, A.R., Mannaerts, J.P., Yang, B., Ye, P., Gossmann, H., Sergent, A.M., Ng, K.K., Bude, J., Schulte, W.H., Garfunkel, E., Gustafsson, T.

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Depth-profile study of the electronic structures at Ga2O3(Gd2O3) and Gd2O3-GaN interfaces by X-ray photoelectron spectroscopy von LAY, T. S, LIAO, Y. Y, HUNG, W. H, HONG, M, KWO, J, MANNAERTS, J. P

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Optimization of AuGe-Ni-Au ohmic contacts for GaAs MOSFETs von Hung-Cheng Lin, Senanayake, S., Keh-Yung Cheng, Minghwei Hong, Kwo, J.R., Bin Yang, Mannaerts, J.P.

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Initial growth of Ga2O3(Gd2O3) on GaAs: Key to the attainment of a low interfacial density of states von Hong, M., Lu, Z. H., Kwo, J., Kortan, A. R., Mannaerts, J. P., Krajewski, J. J., Hsieh, K. C., Chou, L. J., Cheng, K. Y.

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Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga2O3(Gd2O3) as gate dielectric von YANG, B, YE, P. D, KWO, J, FREI, M. R, GOSSMANN, H.-J. L, MANNAERTS, J. P, SERGENT, M, HONG, M, NG, K, BUDE, J

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GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition von YE, P. D, WILK, G. D, BUDE, J, YANG, B, KWO, J, GOSSMANN, H.-J. L, FREI, M, MANNAERTS, J. P, SERGENT, M, HONG, M, NG, K. K

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Dielectric properties of electron-beam deposited Ga2O3 films von Passlack, M., Hunt, N. E. J., Schubert, E. F., Zydzik, G. J., Hong, M., Mannaerts, J. P., Opila, R. L., Fischer, R. J.

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High ε gate dielectrics Gd2O3 and Y2O3 for silicon von Kwo, J., Hong, M., Kortan, A. R., Queeney, K. T., Chabal, Y. J., Mannaerts, J. P., Boone, T., Krajewski, J. J., Sergent, A. M., Rosamilia, J. M.

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Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si von Kwo, J., Hong, M., Kortan, A. R., Queeney, K. L., Chabal, Y. J., Opila, R. L., Muller, D. A., Chu, S. N. G., Sapjeta, B. J., Lay, T. S., Mannaerts, J. P., Boone, T., Krautter, H. W., Krajewski, J. J., Sergnt, A. M., Rosamilia, J. M.

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Demonstration of submicron depletion-mode GaAs MOSFETs with negligible drain current drift and hysteresis von Wang, Y.C., Hong, M., Kuo, J.M., Mannaerts, J.P., Kwo, J., Tsai, H.S., Krajewski, J.J., Chen, Y.K., Cho, A.Y.

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Structurally induced optical transitions in Ge-Si superlattices von PEARSALL, T. P, BEVK, J, FELDMAN, L. C, BONAR, J. M, MANNAERTS, J. P, OURMAZD, A

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Recombination velocity at oxide–GaAs interfaces fabricated by in situ molecular beam epitaxy von Passlack, M., Hong, M., Mannaerts, J. P., Kwo, J. R., Tu, L. W.

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Long-wavelength resonant vertical-cavity LED/photodetector with a 75-nm tuning range von Christenson, G.L., Tran, A.T.T.D., Zhu, Z.H., Lo, Y.H., Hong, M., Mannaerts, J.P., Bhat, R.

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