Band alignment and electrical properties of Al2O3/ β -Ga2O3 heterojunctions von Kamimura, Takafumi, Sasaki, Kohei, Hoi Wong, Man, Krishnamurthy, Daivasigamani, Kuramata, Akito, Masui, Takekazu, Yamakoshi, Shigenobu, Higashiwaki, Masataka

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Utilization of international normalized ratio‐derived formula to predict plasma rivaroxaban level—Validation study and real‐world experience von Sin, Chun‐fun, Wong, Ka‐ping, Siu, Chun Wah, Wong, Tsz‐fu, Wong, Hoi‐man

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Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V von Man Hoi Wong, Sasaki, Kohei, Kuramata, Akito, Yamakoshi, Shigenobu, Higashiwaki, Masataka

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Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures von Kaun, Stephen W., Burke, Peter G., Hoi Wong, Man, Kyle, Erin C. H., Mishra, Umesh K., Speck, James S.

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Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics von Higashiwaki, Masataka, Sasaki, Kohei, Kamimura, Takafumi, Hoi Wong, Man, Krishnamurthy, Daivasigamani, Kuramata, Akito, Masui, Takekazu, Yamakoshi, Shigenobu

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Interface roughness scattering in ultra-thin N-polar GaN quantum well channels von Singisetti, Uttam, Hoi Wong, Man, Mishra, Umesh K.

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Plasma Rivaroxaban Level in Patients With Early Stages of Chronic Kidney Disease-Relationships With Renal Function and Clinical Events von Sin, Chun-Fung, Wong, Ka-Ping, Wong, Hoi-Man, Siu, Chung-Wah, Yap, Desmond Y H

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Engineered polycaprolactone–magnesium hybrid biodegradable porous scaffold for bone tissue engineering von Wong, Hoi Man, Chu, Paul K., Leung, Frankie K.L., Cheung, Kenneth M.C., Luk, Keith D.K., Yeung, Kelvin W.K.

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A landscape of β-Ga2O3 Schottky power diodes von Wong, Man Hoi

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Cytocompatibility, osseointegration, and bioactivity of three-dimensional porous and nanostructured network on polyetheretherketone von Zhao, Ying, Wong, Hoi Man, Wang, Wenhao, Li, Penghui, Xu, Zushun, Chong, Eva Y.W, Yan, Chun Hoi, Yeung, Kelvin W.K, Chu, Paul K

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Common genetic variants regulating ADD3 gene expression alter biliary atresia risk von Cheng, Guo, Tang, Clara Sze-Man, Wong, Emily Hoi-Man, Cheng, William Wai-Chun, So, Man-Ting, Miao, Xiaoping, Zhang, Ruizhong, Cui, Long, Liu, Xuelai, Ngan, Elly Sau-Wai, Lui, Vincent Chi-Hang, Chung, Patrick Ho-Yu, Chan, Ivy Hau-Yee, Liu, Juncheng, Zhong, Wei, Xia, Huimin, Yu, Jiakang, Qiu, Xiu, Wu, Xuan-Zhao, Wang, Bin, Dong, Xiao, Tou, Jinfa, Huang, Liuming, Yi, Bin, Ren, Hongxia, Chan, Edwin Kin-Wai, Ye, Kenny, O′Reilly, Paul F, Wong, Kenneth Kak-Yuen, Sham, Pak-Chung, Cherny, Stacey S, Tam, Paul Kwong-Hang, Garcia-Barceló, Maria-Mercè

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Characterization of channel temperature in Ga2O3 metal-oxide-semiconductor field-effect transistors by electrical measurements and thermal modeling von Wong, Man Hoi, Morikawa, Yoji, Sasaki, Kohei, Kuramata, Akito, Yamakoshi, Shigenobu, Higashiwaki, Masataka

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CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion von Chowdhury, S., Man Hoi Wong, Swenson, B. L., Mishra, U. K.

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Current status and scope of gallium nitride-based vertical transistors for high-power electronics application von Chowdhury, Srabanti, Swenson, Brian L, Wong, Man Hoi, Mishra, Umesh K

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Osteogenic ability of Cu-bearing stainless steel von Ren, Ling, Wong, Hoi Man, Yan, Chun Hoi, Yeung, Kelvin W.K., Yang, Ke

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Challenges of contact module integration for GaN-based devices in a Si-CMOS environment von Johnson, Derek W., Ravikirthi, Pradhyumna, Woo Suh, Jae, Lee, Rinus T. P., Hill, Richard J. W., Hoi Wong, Man, Piner, Edwin L., Rusty Harris, Harlan

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Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs von Singh, Manikant, Casbon, Michael A., Uren, Michael J., Pomeroy, James W., Dalcanale, Stefano, Karboyan, Serge, Tasker, Paul J., Man Hoi Wong, Sasaki, Kohei, Kuramata, Akito, Yamakoshi, Shigenobu, Higashiwaki, Masataka, Kuball, Martin

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Genome-wide copy number analysis uncovers a new HSCR gene: NRG3 von Tang, Clara Sze-Man, Cheng, Guo, So, Man-Ting, Yip, Benjamin Hon-Kei, Miao, Xiao-Ping, Wong, Emily Hoi-Man, Ngan, Elly Sau-Wai, Lui, Vincent Chi-Hang, Song, You-Qiang, Chan, Danny, Cheung, Kenneth, Yuan, Zhen-Wei, Lei, Liu, Chung, Patrick Ho-Yu, Liu, Xue-Lai, Wong, Kenneth Kak-Yuen, Marshall, Christian R, Scherer, Stephen W, Scherer, Steve, Cherny, Stacey S, Sham, Pak-Chung, Tam, Paul Kwong-Hang, Garcia-Barceló, Maria-Mercè

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Atomic scale defect formation and phase transformation in Si implanted β-Ga2O3 von Huang, Hsien-Lien, Chae, Christopher, Johnson, Jared M., Senckowski, Alexander, Sharma, Shivam, Singisetti, Uttam, Wong, Man Hoi, Hwang, Jinwoo

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N-polar GaN∕AlGaN∕GaN high electron mobility transistors von Rajan, Siddharth, Chini, Alessandro, Wong, Man Hoi, Speck, James S., Mishra, Umesh K.

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