A robust spacer gate process for deca-nanometer high-frequency MOSFETs von Hållstedt, J., Hellström, P.-E., Zhang, Z., Malm, B.G., Edholm, J., Lu, J., Zhang, S.-L., Radamson, H.H., Östling, M.

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Surface and core contribution to 1/ f -noise in InAs nanowire metal-oxide-semiconductor field-effect transistors von Persson, K.-M., Malm, B. G., Wernersson, L.-E.

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Lateral encroachment of Ni-silicides in the source/drain regions on ultrathin silicon-on-insulator von Seger, J., Hellström, P.-E., Lu, J., Malm, B. G., von Haartman, M., Östling, M., Zhang, S.-L.

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Characterization of leakage current related to a selectively grown collector in SiGeC heterojunction bipolar transistor structure von Suvar, E, Haralson, E, Radamson, H.H, Wang, Y.-B, Grahn, J.V, Malm, B.G, Östling, M

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Low-frequency noise in Si0.7Ge0.3 surface channel pMOSFETs with ALD HfO2/Al2O3 gate dielectrics von von Haartman, M., Wu, D., Malm, B.G., Hellström, P.-E., Zhang, S.-L., Östling, M.

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Impact of Random Grain Structure on Spin-Hall Nano-Oscillator Modal Stability von Capriata, Corrado Carlo Maria, Jiang, Sheng, Akerman, Johan, Malm, Bengt Gunnar

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Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs von von Haartman, M., Malm, B.G., Hellström, P.-E., Östling, M., Grasby, T.J., Whall, T.E., Parker, E.H.C., Lyutovich, K., Oehme, M., Kasper, E.

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A 4H-SiC Bipolar Technology for High-Temperature Integrated Circuits von LANNI, L, MALM, B. G, ZETTERLING, C.-M, ÖSTLING, M

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Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC von Lanni, Luigia, Ghandi, R., Malm, B. G., Zetterling, C., Ostling, M.

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Self-heating effects in a BiCMOS on SOI technology for RFIC applications von Malm, B.G., Haralson, E., Johansson, T., Ostling, M.

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Stochastic Magnetic Actuated Random Transducer Devices Based on Perpendicular Magnetic Tunnel Junctions von Rehm, L., Capriata, C.C.M., Misra, S., Smith, J.D., Pinarbasi, M., Malm, B.G., Kent, A.D.

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Dependence of the colored frequency noise in spin torque oscillators on current and magnetic field von Eklund, Anders, Bonetti, Stefano, Sani, Sohrab R., Majid Mohseni, S., Persson, Johan, Chung, Sunjae, Amir Hossein Banuazizi, S., Iacocca, Ezio, Östling, Mikael, Åkerman, Johan, Gunnar Malm, B.

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Order of magnitude improvement of nano-contact spin torque nano-oscillator performance von Banuazizi, Seyed Amir Hossein, Sani, Sohrab R, Eklund, Anders, Naiini, Maziar M, Mohseni, Seyed Majid, Chung, Sunjae, Dürrenfeld, Philipp, Malm, B. Gunnar, Åkerman, Johan

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Impact of intragrain spin wave reflections on nanocontact spin torque oscillators von Eklund, Anders J., Dvornik, Mykola, Qejvanaj, Fatjon, Jiang, Sheng, Chung, Sunjae, Åkerman, Johan, Malm, B. Gunnar

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Comprehensive and Macrospin-Based Magnetic Tunnel Junction Spin Torque Oscillator Model-Part I: Analytical Model of the MTJ STO von Tingsu Chen, Eklund, Anders, Iacocca, Ezio, Rodriguez, Saul, Malm, B. Gunnar, Akerman, Johan, Rusu, Ana

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Comprehensive and Macrospin-Based Magnetic Tunnel Junction Spin Torque Oscillator Model- Part II: Verilog-A Model Implementation von Tingsu Chen, Eklund, Anders, Iacocca, Ezio, Rodriguez, Saul, Malm, B. Gunnar, Akerman, Johan, Rusu, Ana

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Total dose effects on 4H-SiC bipolar junction transistors von Suvanam, S. S., Lanni, L., Malm, B. G., Zetterling, C.-M, Hallén, A.

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Integration of GMR-based spin torque oscillators and CMOS circuitry von Chen, Tingsu, Eklund, Anders, Sani, Sohrab, Rodriguez, Saul, Malm, B. Gunnar, Åkerman, Johan, Rusu, Ana

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Mixed mode circuit and device simulation of RF harmonic distortion for high-speed SiGe HBTs von Malm, B.G, Östling, M

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Base resistance scaling for SiGeC HBTs with a fully nickel-silicided extrinsic base von Malm, B.G., Haralson, E., Suvar, E., Radamson, H.H., Yong-Bin Wang, Mikael Ostling

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