Indium nitride quantum dots grown by metalorganic vapor phase epitaxy von Briot, O., Maleyre, B., Ruffenach, S.

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Raman scattering study of wurtzite and rocksalt InN under high pressure von Pinquier, C., Demangeot, F., Frandon, J., Chervin, J.-C., Polian, A., Couzinet, B., Munsch, P., Briot, O., Ruffenach, S., Gil, B., Maleyre, B.

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Raman scattering by the longitudinal optical phonon in InN : Wave-vector nonconserving mechanisms von DEMANGEOT, F, PINQUIER, C, FRANDON, J, GAIO, M, BRIOT, O, MALEYRE, B, RUFFENACH, S, GIL, B

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Radiative and nonradiative recombination processes in InN films grown by metal organic chemical vapor deposition von Intartaglia, R., Maleyre, B., Ruffenach, S., Briot, O., Taliercio, T., Gil, B.

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Absorption and Raman scattering processes in InN films and dots von Briot, O, Maleyre, B, Ruffenach, S, Gil, B, Pinquier, C, Demangeot, F, Frandon, J

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Growth of InN quantum dots by MOVPE von Ruffenach, S., Maleyre, B., Briot, O., Gil, B.

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Raman scattering in large single indium nitride dots: Correlation between morphology and strain von Demangeot, F., Frandon, J., Pinquier, C., Caumont, M., Briot, O., Maleyre, B., Clur-Ruffenach, S., Gil, B.

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Terahertz investigation of high quality indium nitride epitaxial layers von Meziani, Y. M., Maleyre, B., Sadowski, M. L., Ruffenach, S., Briot, O., Knap, W.

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Nanofiltration modeling: a comparative study of the salt filtration performance of a charged ceramic membrane and an organic nanofilter using the computer simulation program nanofl... von Lefebvre, X, Palmeri, J, Sandeaux, J, Sandeaux, R, David, P, Maleyre, B, Guizard, C, Amblard, P, Diaz, J.-F, Lamaze, B

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Response to “Comment on ‘Radiative and nonradiative recombination processes in InN films grown by metal organic chemical vapor deposition’” Appl. Phys. Lett. 87, 176101 (2005)... von Intartaglia, R., Maleyre, B., Ruffenach, S., Briot, O., Taliercio, T., Gil, B.

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Optical investigations on Si-doped InN films von Maleyre, B., Briot, O., Ruffenach, S., Gil, B.

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The value of the direct bandgap of InN: a re-examination von Briot, O., Maleyre, B., Clur-Ruffenach, S., Gil, B., Pinquier, C., Demangeot, F., Frandon, J.

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Investigation of the influence of buffer and nitrided layers on the initial stages of InN growth on sapphire by MOCVD von Maleyre, B., Ruffenach, S., Briot, O., Gil, B., van der Lee, A.

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Raman scattering in hexagonal InN under high pressure von PINQUIER, C, DEMANGEOT, F, RUFFENACH, S, GIL, B, FRANDON, J, POMEROY, J. W, KUBALL, M, HUBEL, H, VAN UDEN, N. W. A, DUNSTAN, D. J, BRIOT, O, MALEYRE, B

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Strain-induced correlations between the phonon frequencies of indium nitride von Briot, O., Gil, B., Maleyre, B., Ruffenach, S., Pinquier, C., Demangeot, F., Frandon, J.

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Growth of InN layers by MOVPE using different substrates von Maleyre, B., Ruffenach, S., Briot, O., Gil, B., Van der Lee, A.

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Lattice parameters of relaxed wurtzite indium nitride powder obtained by MOCVD von Maleyre, B., Ruffenach, S., Briot, O., van der Lee, A.

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Radiative and nonradiative recombination processes in InN filmsgrown by metal organic chemical vapor deposition von Intartaglia, R., Maleyre, B., Ruffenach, S., Briot, O., Taliercio, T., Gil, B.

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Comment on “Radiative and nonradiative recombination process in InN films grown by metal organic chemical vapor deposition” [Appl. Phys. Lett. 86, 142104 (2005)] von Liu, B., Zhang, R., Xie, Z. L., Xiu, X. Q., Bi, Z. X., Gu, S. L., Shi, Y., Zheng, Y. D., Hu, L. J., Chen, Y. H., Wang, Z. G.

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Raman scattering in InN films and nanostructures von Pinquier, C., Demangeot, F., Frandon, J., Briot, O., Maleyre, B., Ruffenach, S., Gil, B., Pomeroy, J., Kuball, M., Hubel, H., van Uden, N., Dunstan, D.

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