Enhancement of f} to 910 GHz by Adopting Asymmetric Gate Recess and Double-Side-Doped Structure in 75-nm-Gate InAlAs/InGaAs HEMTs von Takahashi, Tsuyoshi, Kawano, Yoichi, Makiyama, Kozo, Shiba, Shoichi, Sato, Masaru, Nakasha, Yasuhiro, Hara, Naoki

Volltext

Surface activated bonding of SiC/diamond for thermal management of high-output power GaN HEMTs von Minoura, Yuichi, Ohki, Toshihiro, Okamoto, Naoya, Yamada, Atsushi, Makiyama, Kozo, Kotani, Junji, Ozaki, Shiro, Sato, Masaru, Nakamura, Norikazu

Volltext

High‐power‐density InAlGaN/GaN HEMT using InGaN back barrier for W‐band amplifiers von Kotani, Junji, Makiyama, Kozo, Ohki, Toshihiro, Ozaki, Shiro, Okamoto, Naoya, Minoura, Yuichi, Sato, Masaru, Nakamura, Norikazu, Miyamoto, Yasuyuki

Volltext

Electric Field Modulation in the Channel by Lateral Thickness Distribution of High-k Films Formed on GaN HEMTs to Improve Breakdown Voltage von Miyamoto, Yasuyuki, Makiyama, Kozo

Volltext

Maximum frequency of oscillation of 1.3 THz obtained by using an extended drain-side recess structure in 75-nm-gate InAlAs/InGaAs high-electron-mobility transistors von Takahashi, Tsuyoshi, Kawano, Yoichi, Makiyama, Kozo, Shiba, Shoichi, Sato, Masaru, Nakasha, Yasuhiro, Hara, Naoki

Volltext

High performance and high reliability AlGaN/GaN HEMTs von Kikkawa, Toshihide, Makiyama, Kozo, Ohki, Toshihiro, Kanamura, Masahito, Imanishi, Kenji, Hara, Naoki, Joshin, Kazukiyo

Volltext

Electric Field Modulation in the Channel by Lateral Thickness Distribution of High- \textit Films Formed on GaN HEMTs to Improve Breakdown Voltage von Miyamoto, Yasuyuki, Makiyama, Kozo

Volltext

Effects of air annealing on DC characteristics of InAlN/GaN MOS high-electron-mobility transistors using atomic-layer-deposited Al2O3 von Ozaki, Shiro, Makiyama, Kozo, Ohki, Toshihiro, Okamoto, Naoya, Kaneki, Shota, Nishiguchi, Kenya, Hara, Naoki, Hashizume, Tamotsu

Volltext

Millimeter-Wave GaN HEMT for Power Amplifier Applications von JOSHIN, Kazukiyo, MAKIYAMA, Kozo, OZAKI, Shiro, OHKI, Toshihiro, OKAMOTO, Naoya, NIIDA, Yoshitaka, SATO, Masaru, MASUDA, Satoshi, WATANABE, Keiji

Volltext

300-GHz Amplifier in 75-nm InP HEMT Technology von MATSUMURA, Hiroshi, KAWANO, Yoichi, SHIBA, Shoichi, SATO, Masaru, SUZUKI, Toshihide, NAKASHA, Yasuhiro, TAKAHASHI, Tsuyoshi, MAKIYAMA, Kozo, IWAI, Taisuke, HARA, Naoki

Volltext

An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader von Ohki, Toshihiro, Yamada, Atsushi, Minoura, Yuichi, Makiyama, Kozo, Kotani, Junji, Ozaki, Shiro, Sato, Masaru, Okamoto, Naoya, Joshin, Kazukiyo, Nakamura, Norikazu

Volltext

GaN single-chip transceiver frontend MMIC for X-band applications von Masuda, Satoshi, Yamada, Masao, Kamada, Youichi, Ohki, Toshihiro, Makiyama, Kozo, Okamoto, Naoya, Imanishi, Kenji, Kikkawa, Toshihide, Shigematsu, Hisao

Volltext

Millimeter-Wave GaN HEMT for Power Amplifier Applications von Joshin, Kazukiyo, Makiyama, Kozo, Ozaki, Shiro, Ohki, Toshihiro, Okamoto, Naoya, Niida, Yoshitaka, Sato, Masaru, Masuda, Satoshi, Watanabe, Keiji

Volltext

Suppression of current collapse for millimeter-wave GaN-HEMTs von Yamada, Atsushi, Makiyama, Kozo, Ohki, Toshihiro, Kanamura, Masahito, Joshin, Kazukiyo, Imanishi, Kenji, Hara, Naoki, Kikkawa, Toshihide

Volltext

Picosecond Pulse Generators in InP-Based High Electron Mobility Transistor Technology for 10 Gbps Wireless Communication von Nakasha, Yasuhiro, Kawano, Yoichi, Suzuki, Toshihide, Ohki, Toshihiro, Takahashi, Tsuyoshi, Makiyama, Kozo, Hara, Naoki

Volltext

Reliability of GaN HEMTs: current status and future technology von Ohki, T., Kikkawa, T., Inoue, Y., Kanamura, M., Okamoto, N., Makiyama, K., Imanishi, K., Shigematsu, H., Joshin, K., Hara, N.

Volltext

Surface-oxide-controlled InAlN/GaN MOS-HEMTs with water vapor von Ozaki, Shiro, Makiyama, Kozo, Ohki, Toshihiro, Kamada, Yoichi, Sato, Masaru, Niida, Yoshitaka, Okamoto, Naoya, Joshin, Kazukiyo

Volltext

Thermally stable and low trap density SiNx/AlON bi-layer structure for AlGaN/GaN MIS-HEMTs von Kamada, Yoichi, Ozaki, Shiro, Yaita, Junya, Yamada, Atsushi, Ohki, Toshihiro, Minoura, Yuichi, Kumazaki, Yusuke, Okamoto, Naoya, Makiyama, Kozo, Nakamura, Norikazu, Kotani, Junji

Volltext

Thermally stable and low trap density SiN x /AlON bi-layer structure for AlGaN/GaN MIS-HEMTs von Kamada, Yoichi, Ozaki, Shiro, Yaita, Junya, Yamada, Atsushi, Ohki, Toshihiro, Minoura, Yuichi, Kumazaki, Yusuke, Okamoto, Naoya, Makiyama, Kozo, Nakamura, Norikazu, Kotani, Junji

Volltext

Millimeter-Wave GaN HEMTs With Cavity-Gate Structure Using MSQ-Based Inter-Layer Dielectric von Ozaki, Shiro, Makiyama, Kozo, Ohki, Toshihiro, Kamada, Yoichi, Sato, Masaru, Niida, Yoshitaka, Okamoto, Naoya, Joshin, Kazukiyo

Volltext