In vitro and in vivo activity of AS101 against West Nile virus (WNV) von Indenbaum, V., Bin, H., Makarovsky, D., Weil, M., Shulman, L.M., Albeck, M., Sredni, B., Mendelson, E.

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BA6b9, a novel sk4 K + channel blocker, attenuates atrial fibrillation substrate in rats with reduced ejection fraction von Burg, S, Levi, O, Elyagon, S, Shapiro, S, Murninkas, M, Etzion, S, Grawohl, G, Makarovsky, D, Lichtenstein, A, Gordon, Y, Attali, B, Etzion, Y

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Tellurium Compound AS101 Induces PC12 Differentiation and Rescues the Neurons from Apoptotic Death von MAKAROVSKY, D, KALECHMAN, Y, SONINO, T, FREIDKIN, I, TEITZ, S, ALBECK, M, WEIL, M, GEFFEN-ARICHA, R, YADID, G, SREDNI, B

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The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals von Mudd, G. W., Molas, M. R., Chen, X., Zólyomi, V., Nogajewski, K., Kudrynskyi, Z. R., Kovalyuk, Z. D., Yusa, G., Makarovsky, O., Eaves, L., Potemski, M., Fal’ko, V. I., Patanè, A.

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Universal mobility characteristics of graphene originating from charge scattering by ionised impurities von Gosling, Jonathan H., Makarovsky, Oleg, Wang, Feiran, Cottam, Nathan D., Greenaway, Mark T., Patanè, Amalia, Wildman, Ricky D., Tuck, Christopher J., Turyanska, Lyudmila, Fromhold, T. Mark

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Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement von Mudd, Garry W., Svatek, Simon A., Ren, Tianhang, Patanè, Amalia, Makarovsky, Oleg, Eaves, Laurence, Beton, Peter H., Kovalyuk, Zakhar D., Lashkarev, George V., Kudrynskyi, Zakhar R., Dmitriev, Alexandr I.

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Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics von Georgiou, Thanasis, Jalil, Rashid, Belle, Branson D., Britnell, Liam, Gorbachev, Roman V., Morozov, Sergey V., Kim, Yong-Jin, Gholinia, Ali, Haigh, Sarah J., Makarovsky, Oleg, Eaves, Laurence, Ponomarenko, Leonid A., Geim, Andre K., Novoselov, Kostya S., Mishchenko, Artem

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Giant Quantum Hall Plateau in Graphene Coupled to an InSe van der Waals Crystal von Kudrynskyi, Z R, Bhuiyan, M A, Makarovsky, O, Greener, J D G, Vdovin, E E, Kovalyuk, Z D, Cao, Y, Mishchenko, A, Novoselov, K S, Beton, P H, Eaves, L, Patanè, A

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High Broad-Band Photoresponsivity of Mechanically Formed InSe-Graphene van der Waals Heterostructures von Mudd, Garry W., Svatek, Simon A., Hague, Lee, Makarovsky, Oleg, Kudrynskyi, Zakhar R., Mellor, Christopher J., Beton, Peter H., Eaves, Laurence, Novoselov, Kostya S., Kovalyuk, Zakhar D., Vdovin, Evgeny E., Marsden, Alex J., Wilson, Neil R., Patanè, Amalia

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Quantum confined acceptors and donors in InSe nanosheets von Mudd, G. W., Patanè, A., Kudrynskyi, Z. R., Fay, M. W., Makarovsky, O., Eaves, L., Kovalyuk, Z. D., Zólyomi, V., Falko, V.

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Phonon-Assisted Resonant Tunneling of Electrons in Graphene-Boron Nitride Transistors von Vdovin, E E, Mishchenko, A, Greenaway, M T, Zhu, M J, Ghazaryan, D, Misra, A, Cao, Y, Morozov, S V, Makarovsky, O, Fromhold, T M, Patanè, A, Slotman, G J, Katsnelson, M I, Geim, A K, Novoselov, K S, Eaves, L

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A Soluble ‘Ba(Ni-ett)’ (ett = 1,1,2,2-Ethenetetrathiolate) Derived Thermoelectric Material von Hu, Yaoyang, Rivers, Geoffrey, Weir, Michael P., Amabilino, David B., Tuck, Christopher J., Wildman, Ricky D., Makarovsky, Oleg, Woodward, Simon

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Epitaxy of GaSe Coupled to Graphene: From In Situ Band Engineering to Photon Sensing von Bradford, Jonathan, Dewes, Benjamin T., Shiffa, Mustaqeem, Cottam, Nathan D., Rahman, Kazi, Cheng, Tin S., Novikov, Sergei V., Makarovsky, Oleg, O'Shea, James N., Beton, Peter H., Lara‐Avila, Samuel, Harknett, Jordan, Greenaway, Mark T., Patanè, Amalia

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Van der Waals SnSe2(1−x)S2x Alloys: Composition‐Dependent Bowing Coefficient and Electron–Phonon Interaction von Kudrynskyi, Zakhar R., Wang, Xueting, Sutcliffe, Jake, Bhuiyan, Mahabub A., Fu, Yuhao, Yang, Zhuo, Makarovsky, Oleg, Eaves, Laurence, Solomon, Andrij, Maslyuk, Volodymyr T., Kovalyuk, Zakhar D., Zhang, Lijun, Patanè, Amalia

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Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode von Di Paola, D. M., Lu, Q., Repiso, E., Kesaria, M., Makarovsky, O., Krier, A., Patanè, A.

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The Interaction of Hydrogen with the van der Waals Crystal γ -InSe von Felton, James, Blundo, Elena, Ling, Sanliang, Glover, Joseph, Kudrynskyi, Zakhar R, Makarovsky, Oleg, Kovalyuk, Zakhar D, Besley, Elena, Walker, Gavin, Polimeni, Antonio, Patané, Amalia

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Photoquantum Hall Effect and Light‐Induced Charge Transfer at the Interface of Graphene/InSe Heterostructures von Bhuiyan, Mahabub A., Kudrynskyi, Zakhar R., Mazumder, Debarati, Greener, Jake D. G., Makarovsky, Oleg, Mellor, Christopher J., Vdovin, Evgeny E., Piot, Benjamin A., Lobanova, Inna I., Kovalyuk, Zakhar D., Nazarova, Marina, Mishchenko, Artem, Novoselov, Kostya S., Cao, Yang, Eaves, Laurence, Yusa, Go, Patanè, Amalia

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Linear magnetoresistance due to multiple-electron scattering by low-mobility islands in an inhomogeneous conductor von Kozlova, N.V., Mori, N., Makarovsky, O., Eaves, L., Zhuang, Q.D., Krier, A., Patanè, A.

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Inter‐Flake Quantum Transport of Electrons and Holes in Inkjet‐Printed Graphene Devices von Wang, Feiran, Gosling, Jonathan H., Trindade, Gustavo F., Rance, Graham A., Makarovsky, Oleg, Cottam, Nathan D., Kudrynskyi, Zakhar, Balanov, Alexander G., Greenaway, Mark T., Wildman, Ricky D., Hague, Richard, Tuck, Christopher, Fromhold, T. Mark, Turyanska, Lyudmila

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Highly-mismatched InAs/InSe heterojunction diodes von Velichko, A. V., Kudrynskyi, Z. R., Di Paola, D. M., Makarovsky, O., Kesaria, M., Krier, A., Sandall, I. C., Tan, C. H., Kovalyuk, Z. D., Patanè, A.

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