Wafer-Scale, Sub-5 nm Junction Formation by Monolayer Doping and Conventional Spike Annealing von Ho, Johnny C, Yerushalmi, Roie, Smith, Gregory, Majhi, Prashant, Bennett, Joseph, Halim, Jeffri, Faifer, Vladimir N, Javey, Ali

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Nanoscale doping of InAs via sulfur monolayers von Ho, Johnny C., Ford, Alexandra C., Chueh, Yu-Lun, Leu, Paul W., Ergen, Onur, Takei, Kuniharu, Smith, Gregory, Majhi, Prashant, Bennett, Joseph, Javey, Ali

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Thermionic Field Emission Explanation for Nonlinear Richardson Plots von Kenney, C., Saraswat, K. C., Taylor, B., Majhi, P.

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Measurement of Schottky barrier height tuning using dielectric dipole insertion method at metal–semiconductor interfaces by photoelectron spectroscopy and electrical characterizati... von Coss, Brian E., Sivasubramani, Prasanna, Brennan, Barry, Majhi, Prashant, Wallace, Robert M., Kim, Jiyoung

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Contact Resistance Reduction to FinFET Source/Drain Using Novel Dielectric Dipole Schottky Barrier Height Modulation Method von Coss, B. E., Smith, C., Wei-Yip Loh, Majhi, P., Wallace, R. M., Kim, J., Jammy, R.

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Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47As and InP using physical vapor deposition HfO2 and silicon interface pa... von Ok, InJo, Kim, H., Zhang, M., Zhu, F., Park, S., Yum, J., Zhao, H., Garcia, Domingo, Majhi, Prashant, Goel, N., Tsai, W., Gaspe, C. K., Santos, M. B., Lee, Jack C.

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Study of piezoresistance under unixial stress for technologically relevant III-V semiconductors using wafer bending experiments von Nainani, Aneesh, Yum, Jung, Barnett, Joel, Hill, Richard, Goel, Niti, Huang, Jeff, Majhi, Prashant, Jammy, Raj, Saraswat, Krishna C.

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Impact of Fin Doping and Gate Stack on FinFET (110) and (100) Electron and Hole Mobilities von Akarvardar, K., Young, C. D., Baykan, M. O., Injo Ok, Tat Ngai, Kah-Wee Ang, Rodgers, M. P., Gausepohl, S., Majhi, P., Hobbs, C., Kirsch, P. D., Jammy, R.

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A study of metal-oxide-semiconductor capacitors on GaAs, In0.53Ga0.47As, InAs, and InSb substrates using a germanium interfacial passivation layer von Kim, Hyoung-Sub, Ok, I., Zhang, M., Zhu, F., Park, S., Yum, J., Zhao, H., Lee, Jack C., Majhi, Prashant, Goel, N., Tsai, W., Gaspe, C. K., Santos, M. B.

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on-State Performance Enhancement and Channel-Direction-Dependent Performance of a Biaxial Compressive Strained \hbox\hbox Quantum-Well pMOSFET Along \langle \hbox \rangle and \lang... von Se-Hoon Lee, Nainani, Aneesh, Jungwoo Oh, Kanghoon Jeon, Kirsch, Paul D, Majhi, Prashant, Register, Leonard Franklin, Banerjee, Sanjay K, Jammy, Raj

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Influence of the substrate orientation on the electrical and material properties of GaAs metal-oxide-semiconductor capacitors and self-aligned transistors using HfO2 and silicon in... von Ok, InJo, Kim, H., Zhang, M., Zhu, F., Park, S., Yum, J., Zhao, H., Garcia, Domingo, Majhi, Prashant, Lee, Jack C.

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Effective work function of Pt, Pd, and Re on atomic layer deposited HfO2 von Gu, Diefeng, Dey, Sandwip K., Majhi, Prashant

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The Effect of a Si Capping Layer on RF Characteristics of High- k /Metal Gate SiGe Channel pMOSFETs von Min Sang Park, Kyong Taek Lee, Chang Yong Kang, Gil-Bok Choi, Hyun Chul Sagong, Chang Woo Sohn, Byoung-Gi Min, Jungwoo Oh, Majhi, Prashant, Hsing-Huang Tseng, Lee, Jack C, Jeong-Soo Lee, Jammy, Raj, Yoon-Ha Jeong

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Thermal Immune NiGermanide for High Performance Ge MOSFETs on Ge-on- Si Substrate Utilizing \hbox\hbox Alloy von Ying-Ying Zhang, Jungwoo Oh, In-Shik Han, Zhun Zhong, Shi-Guang Li, Soon-Yen Jung, Kee-Young Park, Hong-Sik Shin, Won-Ho Choi, Hyuk-Min Kwon, Wei-Yip Loh, Majhi, P., Jammy, R., Hi-Deok Lee

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Effective work function of Pt, Pd, and Re on atomic layer deposited HfO{sub 2} von Gu Diefeng, Dey, Sandwip K., Majhi, Prashant, Planar CMOS Scaling, SEMATECH, Austin, Texas 78741

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Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate von Yoo, Ook Sang, Oh, Jungwoo, Kang, Chang Yong, Lee, Byoung Hun, Han, In Shik, Choi, Won-Ho, Kwon, Hyuk-Min, Na, Min-Ki, Majhi, Prashant, Tseng, Hsing-Huang, Jammy, Raj, Wang, Jin Suk, Lee, Hi-Deok

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Combined Effects of an Epitaxial Ge Channel and Si Substrate on Ge-on-Si Metal–Oxide–Semiconductor Capacitors and Field Effect Transistors von Oh, Jungwoo, Majhi, Prashant, Lee, Hi-Deok, Banerjee, Sanjay, Harris, Rusty, Tseng, Hsing-Huang, Jammy, Raj

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Influence of an Oxide Interlayer Dielectric (ILD) Capping Layer on the Thermal Stability of Ni Germanide for Nanoscale Ge MOSFETs von Ying-Ying Zhang, In-Shik Han, Shi-Guang Li, Soon-Yen Jung, 박기영, 신홍식, Ga-Won Lee, 왕진석, 이희덕, 오정우, Prashant Majhi, Raj Jammy

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Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- k/Metal Gate Stacks Directly on SiGe von Huang, J., Kirsch, P.D., Jungwoo Oh, Se Hoon Lee, Majhi, P., Harris, H.R., Gilmer, D.C., Bersuker, G., Dawei Heh, Chang Seo Park, Park, C., Hsing-Huang Tseng, Jammy, R.

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Highly (111)-oriented and conformal iridium films by liquid source metalorganic chemical vapor deposition von Goswami, Jaydeb, Wang, Chang-Gong, Majhi, Prashant, Shin, Yong-Wook, Dey, Sandwip K.

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