Non-Watson-Crick RNA synthesis suited to origin functions von Puthenvedu, Deepa, Majerfeld, Irene, Yarus, Michael

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Cross-backbone templating; ribodinucleotides made on poly(C) von Majerfeld, Irene, Puthenvedu, Deepa, Yarus, Michael

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Selection of the simplest RNA that binds isoleucine von Lozupone, Catherine, Changayil, Shankar, Majerfeld, Irene, Yarus, Michael

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A diminutive and specific RNA binding site for L-tryptophan von Majerfeld, Irene, Yarus, Michael

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Isoleucine:RNA sites with associated coding sequences von MAJERFELD, IRENE, YARUS, MICHAEL

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RNA affinity for molecular L-histidine; genetic code origins von Majerfeld, Irene, Puthenvedu, Deepa, Yarus, Michael

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Temperature dependence of excitonic properties of (111)B InGaAs/GaAs piezoelectric and pyroelectric multiquantum wells von Cho, Soohaeng, Majerfeld, A.

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RNAs That Bind and Change the Permeability of Phospholipid Membranes von Khvorova, Anastasia, Kwak, Yong-Geun, Tamkun, Michael, Majerfeld, Irene, Yarus, Michael

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23S rRNA Similarity from Selection for Peptidyl Transferase Mimicry von Welch, Mark, Majerfeld, Irene, Yarus, Michael

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An RNA pocket for an aliphatic hydrophobe von Majerfeld, Irene, Yarus, Michael

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Determination of the pyroelectric coefficient in strained InGaAs/GaAs quantum wells grown on (111)B GaAs substrates von Cho, Soohaeng, Majerfeld, A., Sanz-Hervás, A., Sánchez, J. J., Sánchez-Rojas, J. L., Izpura, I.

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Very high carbon incorporation in metalorganic vapor phase epitaxy of heavily doped p-type GaAs von HANNA, M. C, LU, Z. H, MAJERFELD, A

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[19] Affinity selection-amplification from randomized ribooligonucleotide pools von Ciesiolka, Jerzy, Illangasekare, Mali, Majerfeld, Irene, Nickles, Tim, Welch, Mark, Yarus, Michael, Zinnen, Shawn

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Electronic and intersubband optical properties of p -type GaAs/AlGaAs superlattices for infrared photodetectors von Kim, B. W., Majerfeld, A.

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Two-band analysis of hole mobility and Hall factor for heavily carbon-doped p -type GaAs von Kim, B. W., Majerfeld, A.

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Confirmation of the pyroelectric coefficient of strained InxGa1−xAs/GaAs quantum well structures grown on (111)B GaAs by differential photocurrent spectroscopy von Sánchez, J. J., Izpura, J. I., Tijero, J. M. G., Muñoz, E., Cho, Soohaeng, Majerfeld, A.

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Characterization of piezoelectric and pyroelectric properties of MOVPE-grown strained (111)A InGaAs/GaAs QW structures by modulation spectroscopy von Cho, Soohaeng, Kim, Jongseok, Sanz-Hervás, A., Majerfeld, A., Patriarche, G., Kim, B. W.

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Determination of band gap narrowing and hole density for heavily C-doped GaAs by photoluminescence spectroscopy von Lu, Z. H., Hanna, M. C., Majerfeld, A.

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Structural properties of strained piezoelectric [1 1 1]A-oriented InGaAs/GaAs quantum well structures grown by MOVPE von Kim, Jongseok, Cho, Soohaeng, Sanz-Hervás, A., Majerfeld, A., Patriarche, G., Kim, B.W.

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Interfacial properties of (111)A GaAs/AlGaAs multiquantum-well structures grown by metalorganic vapor phase epitaxy von Sanz-Hervás, A., Cho, Soohaeng, Majerfeld, A., Kim, B. W.

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