Electrical Behavior of Phase-Change Memory Cells Based on GeTe von Perniola, Luca, Sousa, Veronique, Fantini, Andrea, Arbaoui, Edrisse, Bastard, Audrey, Armand, Marilyn, Fargeix, Alain, Jahan, Carine, Nodin, Jean-Francois, Persico, Alain, Blachier, Denis, Toffoli, Alain, Loubriat, Sebastien, Gourvest, Emanuel, Betti Beneventi, Giovanni, Feldis, Helene, Maitrejean, Sylvain, Lhostis, Sandrine, Roule, Anne, Cueto, Olga, Reimbold, Gilles, Poupinet, Ludovic, Billon, Thierry, De Salvo, Barbara, Bensahel, Daniel, Mazoyer, Pascale, Annunziata, Roberto, Zuliani, Paola, Boulanger, Fabien

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Local lateral integration of 16-nm thick Ge nanowires on silicon on insulator substrates von Khazaka, Rami, Bogumilowicz, Yann, Papon, Anne-Marie, Dansas, Hugo, Boutry, Hervé, Chalupa, Zdenek, Lapras, Valérie, Prévitali, Bernard, Maitrejean, Sylvain

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Vibrational properties and stabilization mechanism of the amorphous phase of doped GeTe von Raty, Jean-Yves, Noé, Pierre, Ghezzi, Giada, Maîtrejean, Sylvain, Bichara, Christophe, Hippert, Françoise

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Large‐Diameter III–V on Si Substrates by the Smart Cut Process: The 200 mm InP Film on Si Substrate Example von Ghyselen, Bruno, Navone, Christelle, Martinez, Muriel, Sanchez, Loic, Lecouvey, Christophe, Montmayeul, Brigitte, Servant, Florence, Maitrejean, Sylvain, Radu, Ionut

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Large‐Diameter III–V on Si Substrates by the Smart Cut Process: The 200 mm InP Film on Si Substrate Example von Ghyselen, Bruno, Navone, Christelle, Martinez, Muriel, Sanchez, Loic, Lecouvey, Christophe, Montmayeul, Brigitte, Servant, Florence, Maitrejean, Sylvain, Radu, Ionut

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A Novel Programming Technique to Boost Low-Resistance State Performance in Ge-Rich GST Phase Change Memory von Kiouseloglou, Athanasios, Navarro, Gabriele, Sousa, Veronique, Persico, Alain, Roule, Anne, Cabrini, Alessandro, Torelli, Guido, Maitrejean, Sylvain, Reimbold, Gilles, De Salvo, Barbara, Clermidy, Fabien, Perniola, Luca

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Preface von Thomas, Olivier, Farcy, Alexis, Maitrejean, Sylvain, Verdier, Marc

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MAM 2012 (selected contributions) March 11–14, Grenoble, France Minatec Campus von MAITREJEAN, Sylvain, FARCY, Alexis, CHEVOLLEAU, Thierry

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Pattern size dependence of grain growth in Cu interconnects von Brandstetter, Stefan, Rauch, Edgar F., Carreau, Vincent, Maîtrejean, Sylvain, Verdier, Marc, Legros, Marc

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Confined selective lateral epitaxial growth of 16-nm thick Ge nanostructures on SOI substrates: Advantages and challenges von Khazaka, Rami, Bogumilowicz, Yann, Rouchon, Denis, Boutry, Hervé, Chalupa, Zdenek, Lapras, Valérie, Prévitali, Bernard, Chevalier, Nicolas, Papon, Anne Marie, David, Sylvain, Maitrejean, Sylvain

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Grain morphology of Cu damascene lines von Brandstetter, Stefan, Carreau, Vincent, Maîtrejean, Sylvain, Verdier, Marc, Legros, Marc

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Study of low temperature MOCVD deposition of TiN barrier layer for copper diffusion in high aspect ratio through silicon vias von Djomeni, Larissa, Mourier, Thierry, Minoret, Stéphane, Fadloun, Sabrina, Piallat, Fabien, Burgess, Steve, Price, Andrew, Zhou, Yun, Jones, Christopher, Mathiot, Daniel, Maitrejean, Sylvain

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(Keynote) Low Temperature SmartCutTM Process for 3D Integration von Schwarzenbach, Walter, Reboh, Shay, Ghorbel, Aymen, Gaudin, Gweltaz, Besnard, Guillaume, Mazen, Frédéric, Loup, Virginie, Maitrejean, Sylvain, Brunet, Laurent, Nguyen, Bich-Yen, Maleville, Christophe

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(Keynote) Low Temperature SmartCut TM Process for 3D Integration von Schwarzenbach, Walter, Reboh, Shay, Ghorbel, Aymen, Gaudin, Gweltaz, Besnard, Guillaume, Mazen, Frédéric, Loup, Virginie, Maitrejean, Sylvain, Brunet, Laurent, Nguyen, Bich-Yen, Maleville, Christophe

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A review of the mechanical stressors efficiency applied to the ultra-thin body & buried oxide fully depleted silicon on insulator technology von Morin, Pierre, Maitrejean, Sylvain, Allibert, Frederic, Augendre, Emmanuel, Liu, Qing, Loubet, Nicolas, Grenouillet, Laurent, Pofelski, Alexandre, Chen, Kangguo, Khakifirooz, Ali, Wacquez, Romain, Reboh, Shay, Bonnevialle, Aurore, le Royer, Cyrille, Morand, Yves, Kanyandekwe, Joel, Chanemougamme, Daniel, Mignot, Yann, Escarabajal, Yann, Lherron, Benoit, Chafik, Fadoua, Pilorget, Sonia, Caubet, Pierre, Vinet, Maud, Clement, Laurent, Desalvo, Barbara, Doris, Bruce, Kleemeier, Walter

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(Invited) Germanium Enrichment for Planar-, Fin- and Nanowire-Channel MOSFETs Made on SOI von Augendre, Emmanuel, Loubet, Nicolas, Morin, Pierre Francois, Liu, Qing, Schmitt, Joël, L'Herron, Benoît, Nguyen, Phuong, Barraud, Sylvain, Hutin, Louis, Maitrejean, Sylvain, De Salvo, Barbara, Coquand, Rémi, Reboh, Shay, Venigalla, Rajasekhar, Doris, Bruce, Yamashita, Tenko, Faynot, Olivier, Vinet, Maud

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Solution chemistry effects on cracking and damage evolution during chemical-mechanical planarization von Ong, Markus D., Leduc, Patrick, McKenzie, Daniel W., Farjot, Thierry, Passemard, Gerard, Maitrejean, Sylvain, Dauskardt, Reinhold H.

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Mechanical Analyses of Extended and Localized UTBB Stressors Formed with Ge Enrichment Techniques von Morin, Pierre Francois, Grenouillet, Laurent, Loubet, Nicolas, Pofelski, Alexandre, Lu, Darsen, Liu, Qing, Augendre, Emmanuel, Maitrejean, Sylvain, Fiori, Vincent, de Salvo, Barbara, Doris, Bruce, Kleemeier, Walter

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A New Method to Induce Tensile Stress in Silicon on Insulator Substrate: From Material Analysis to Device Demonstration von Maitrejean, Sylvain, Loubet, Nicolas, Augendre, Emmanuel, Morin, Pierre Francois, Reboh, Shay, Bernier, Nicolas, Wacquez, Romain, Lherron, Benoit, Bonnevialle, Aurore, Liu, Qing, Hartmann, Jean-Michel, He, Hong, Halimaoui, Aomar, Li, Juntao, Pilorget, Sonia, Kanyandekwe, Joel, Grenouillet, Laurent, Chafik, Fadoua, Morand, Yves, Le Royer, Cyrille, Faynot, Oliver, Celik, Muhsin, Doris, Bruce, de Salvo, Barbara

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Method for forming a layer by cyclic epitaxy von Mazzocchi, Vincent, Maitrejean, Sylvain

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