Design study of gate-all-around vertically stacked nanosheet FETs for sub-7nm nodes von Mohapatra, E., Dash, T. P., Jena, J., Das, S., Maiti, C. K.

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Interface Properties of Atomic Layer Deposited TiO2/Al2O3 Films on In0.53Ga0.47As/InP Substrates von Mukherjee, C, Das, T, Mahata, C, Maiti, C. K, Chia, C. K, Chiam, S. Y, Chi, D. Z, Dalapati, G. K

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Graphene oxide-based flexible metal-insulator-metal capacitors von Bag, A, Hota, M K, Mallik, S, Maiti, C K

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Strain-Engineered MOSFETs von Maiti, C. K, Maiti, T. K

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Degradation analysis and characterization of multifilamentary conduction patterns in high-field stressed atomic-layer-deposited TiO2/Al2O3 nanolaminates on GaAs von Miranda, E., Suñé, J., Das, T., Mahata, C., Maiti, C. K.

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Hybrid orientation technology and strain engineering for ultra-high speed MOSFETs von Maiti, T K, Maiti, C K

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Performance improvement of flash memory using AlN as charge-trapping Layer von Chakraborty, P., Mahato, S.S., Maiti, T.K., Bera, M.K., Mahata, C., Samanta, S.K., Biswas, A., Maiti, C.K.

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Current conduction mechanism in TiO2 gate dielectrics von CHAKRABORTY, S, BERA, M. K, BHATTACHARYA, S, MAITI, C. K

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An extension of the Curie-von Schweidler law for the leakage current decay in MIS structures including progressive breakdown von Miranda, E., Mahata, C., Das, T., Maiti, C.K.

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Experimental and simulation study of charge transport mechanism in HfTiOx high-k gate dielectric on SiGe heterolayers von Maiti, P P, Dash, Ajit, Guhathakurata, S, Das, S, BAG, Atanu, Dash, T P, Ahmad, G, MAITI, C K, Mallik, S

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Electrical properties and noise characterization of HfO2 gate dielectrics on strained SiGe layers von Mallik, S., Mukherjee, C., Mahata, C., Hota, M.K., Das, T., Dalapati, G.K., GaO, H., Kumar, M.K., Chi, D.Z., Sarkar, C.K., Maiti, C.K.

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High frequency characterization and continuum modeling of ultrathin high- k (ZrO 2) gate dielectrics on strained-Si von Bera, M.K., Chakraborty, S., Saha, S., Paramanik, D., Varma, S., Bhattacharya, S., Maiti, C.K.

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Strain induced variability study in Gate-All-Around vertically-stacked horizontal nanosheet transistors von Mohapatra, E, Dash, T P, Jena, J, Das, S, Maiti, C K

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Design and optimization of stress/strain in GAA nanosheet FETs for improved FOMs at sub-7 nm nodes von Mohapatra, E, Jena, D, Das, S, Maiti, CK, Dash, T P

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Performance comparison of strained-SiGe and bulk-Si channel FinFETs at 7 nm technology node von Dash, T P, Dey, S, Das, S, Jena, J, Mohapatra, E, Maiti, C K

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Stress-Induced Variability Studies in Tri-Gate FinFETs with Source/Drain Stressor at 7 nm Technology Nodes von Dash, T. P., Jena, J., Mohapatra, E., Dey, S., Das, S., Maiti, C. K.

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Resistive switching in natural silk fibroin protein-based bio-memristors von Mukherjee, C., Hota, M. K., Naskar, D., Kundu, S. C., Maiti, C. K.

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Design and simulation of vertically-stacked nanowire transistors at 3 nm technology nodes von Dey, S, Jena, J, Mohapatra, E, Dash, T P, Das, S, Maiti, C K

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TiO2/GeOxNy stacked gate dielectrics for Ge-MOSFETs von Bera, M K, Mahata, C, Chakraborty, A K, Nandi, S K, Tiwari, Jitendra N, Hung, Jui-Yi, Maiti, C K

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Fin Shape Dependence of Electrostatics and Variability in FinFETs von Jena, J., Dash, T. P., Mohapatra, E., Dey, S., Das, S., Maiti, C. K.

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