Creation and Development of the Ion Beam Technology von Maishev, Yu. P.

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Applications of the Technology of Fast Neutral Particle Beams in Micro- and Nanoelectronics von Kudrya, V. P., Maishev, Yu. P.

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Generation of fast neutral beams based on closed drift ion sources von Maishev, Yu. P., Shevchuk, S. L., Kudrya, V. P.

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Investigation into the selectivity of etching various materials by fast neutral particle beams von Maishev, Yu. P., Shevchuk, S. L., Kudrya, V. P.

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Calculation of the flow capacity of a gas channel in the sources of beams of fast neutral particles by means of the Monte-Carlo method von Kudrya, V. P., Maishev, Yu. P.

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Mathematical simulation of the influence of a focusing channel surface on the angle characteristics of a bundle of rapid neutral particles von Degtyarev, A. V., Kudrya, V. P., Maishev, Yu. P.

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Mathematical simulation of an inclined neutralization channel for a plasma source of neutral beams von Degtyarev, A. V., Kudrya, V. P., Maishev, Yu. P.

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Installation for etching and deposition of thin-film structures by a fast neutral particle beam von Maishev, Yu. P., Shevchuk, S. L., Terent’ev, Yu. P.

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Silicon oxycarbide thin films deposited from viniltrimethoxysilane ion beams von Shevchuk, S.L., Maishev, Yu.P.

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A system for precision reactive ion-beam etching of nanostructures for field-emission devices von Maishev, Yu. P., Terent’ev, Yu. P., Shevchuk, S. L., Tatarenko, N. I., Golikov, V. A.

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The direct resist-free deposition of a lithographic mask from vapor initiated by an electron beam von Bruk, M. A., Zhikharev, E. N., Shevchuk, S. L., Volegova, I. A., Spirin, A. V., Teleshov, E. N., Kal’nov, V. A., Maishev, Yu. P.

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Features of resist-free formation of masking pattern by electron beam-induced vapor deposition von Bruk, M. A., Zhikharev, E. N., Shevchuk, S. L., Volegova, I. A., Spirin, A. V., Teleshov, E. N., Kal’nov, V. A., Maishev, Yu. P.

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Silicon oxycarbide thin films deposited from viniltrimethoxysilane ion beams von SHEVCHUK, S. L, MAISHEV, Yu. P

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Formation of masking pattern by electron beam-induced vapor deposition von Bruk, M. A., Zhikharev, E. N., Shevchuk, S. L., Volegova, I. A., Spirin, A. V., Teleshov, E. N., Kal’nov, V. A., Maishev, Yu. P.

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Investigations of diamond-like carbon films produced directly from an ion beam of industrial ion source with a cold cathode von Enisherlova, K.L., Kontsevoi, Yu.A., Chervyakova, E.N., Mitrofanov, E.A., Maishev, Yu.P.

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Possibility of the use of intermediate carbidsiliconoxide nanolayers on polydiamond substrates for gallium nitride layers epitaxy von Averichkin, P. A., Donskov, A. A., Dukhnovsky, M. P., Knyazev, S. N., Kozlova, Yu. P., Yugova, T. G., Belogorokhov, I. A.

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Development of a source of accelerated neutral particles for the final purification of dielectric substrates von Simon, V. A., Kostrin, D. K., Trifonov, S. A.

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Effect of Ion-Beam Treatment on the Structure and Properties of Titanium-Oxide Films von Gabova, A. K., Krylov, P. N., Zakirova, R. M., Fedotova, I. V.

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Effect of ion treatment on the structure and optical properties of nanocrystalline In2O3:Sn films von Vetoshkin, V. M., Zakirova, R. M., Kostenkov, N. V., Krylov, P. N.

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Discharge and emission parameters of a plasma electron source based on a discharge in crossed E × H fields with various cathode materials von Dostanko, A. P., Golosov, D. A.

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