Variational p-harmonious functions: existence and convergence to p-harmonic functions von Chandra, E. W., Ishiwata, M., Magnanini, R., Wadade, H.

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Short-time behavior for game-theoretic p-caloric functions von Berti, D., Magnanini, R.

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Stationary isothermic surfaces and uniformly dense domains von Magnanini, R., Prajapat, J., Sakaguchi, S.

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Investigation of GaAs/InGaP superlattices for quantum well solar cells von Magnanini, R., Tarricone, L., Parisini, A., Longo, M., Gombia, E.

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Interaction between degenerate diffusion and shape of domain von Magnanini, R., Sakaguchi, S.

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Metal–insulator transition induced by the magnetic field in n-type GaSb von Ghezzi, C., Magnanini, R., Parisini, A.

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Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs von Longo, M., Magnanini, R., Parisini, A., Tarricone, L., Carbognani, A., Bocchi, C., Gombia, E.

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Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources von Begotti, M, Longo, M, Magnanini, R, Parisini, A, Tarricone, L, Bocchi, C, Germini, F, Lazzarini, L, Nasi, L, Geddo, M

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Elliptic Equations in Divergence Form, Geometric Critical Points of Solutions, and Stekloff Eigenfunctions von Alessandrini, G., Magnanini, R.

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Magneto-oscillations of the Hall coefficient in n-type GaSb at the extreme quantum limit von Ghezzi, C., Magnanini, R., Parisini, A.

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Stable Solutions to Some Elliptic Problems: Minimal Cones, the Allen-Cahn Equation, and Blow-Up Solutions von Henrot, Antoine, Shahgholian, Henrik, Reichel, Wolfgang, Cabré, Xavier, Peralta-Salas, Daniel

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Effects of a resonant shallow state on the electrical properties of Te-doped AlxGa1−xSb von Ghezzi, C., Magnanini, R., Parisini, A., Gombia, E., Mosca, R.

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In-plane electrical transport in n -type selectively doped GaSb/AlGaSb multiquantum wells von Ghezzi, C., Cioce, B., Magnanini, R., Parisini, A.

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Photoluminescence study of heavy doping effects in Te-doped GaSb von Bignazzi, A., Bosacchi, A., Magnanini, R.

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Electrical and photoelectrical properties of a GaAs-based p-i-n structure grown by MOVPE von Begotti, M., Longo, M., Magnanini, R., Tarricone, L., Gombia, E., Mosca, R., Lynch, M., Barnham, K., Mazzer, M., Hill, G.

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Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources von Begotti, M., Ghezzi, C., Longo, M., Magnanini, R., Parisini, A., Tarricone, L., Vantaggio, S.

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Determination of the occupancy level of the DX center resonant with the conduction band in Te-doped AlGaSb von Ghezzi, C., Magnanini, R., Parisini, A., Franchi, S., Gombia, E., Mosca, R.

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Topological Aspects of Critical Points and Level Sets in Elliptic PDEs von Henrot, Antoine, Shahgholian, Henrik, Reichel, Wolfgang, Cabré, Xavier, Peralta-Salas, Daniel

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Isoperimetric Inequalities for Eigenvalues of the Laplacian von Henrot, Antoine, Shahgholian, Henrik, Reichel, Wolfgang, Cabré, Xavier, Peralta-Salas, Daniel

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Photoreflectance of GaSb/Al0.4Ga0.6Sb single quantum wells von Geddo, M., Ferrini, R., Patrini, M., Franchi, S., Baraldi, A., Magnanini, R.

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