ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT von Aubry, R., Jacquet, J. C., Oualli, M., Patard, O., Piotrowicz, S., Chartier, E., Michel, N., Trinh Xuan, L., Lancereau, D., Potier, C., Magis, M., Gamarra, P., Lacam, C., Tordjman, M., Jardel, O., Dua, C., Delage, S. L.

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AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz von Sarazin, N., Morvan, E., di Forte Poisson, M.A., Oualli, M., Gaquiere, C., Jardel, O., Drisse, O., Tordjman, M., Magis, M., Delage, S.L.

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Radiofréquence monopolaire von Magis, M.

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Characteristics of Al2O3/AlInN/GaN MOSHEMT von MEDJDOUB, F, SARAZIN, N, TORDJMAN, M, MAGIS, M, DI FORTE-POISSON, M. A, KNEZ, M, DELOS, E, GAQUIERE, C, DELAGE, S. L, KOHN, E

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Lasers vasculaire – Niveau 1 : les bases et le traitement de la rosacée von Magis, M., Rossi, B.

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LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications von di Forte Poisson, M.-A., Sarazin, N., Magis, M., Tordjman, M., Di Persio, J., Langer, R., Iliopoulos, E., Georgakilas, A., Kominou, P., Guziewicz, M., Kaminska, E., Piotrowska, A., Gaquière, C., Oualli, M., Chartier, E., Morvan, E., Delage, S.

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X-band power characterisation of AlInN/AlN/GaN HEMT grown on SiC substrate von Sarazin, N., Jardel, O., Morvan, E., Aubry, R., Laurent, M., Magis, M., Tordjman, M., Alloui, M., Drisse, O., Di Persio, J., di Forte Poisson, M.A., Delage, S.L., Vellas, N., Gaquière, C., Théron, D.

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In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD von di Forte Poisson, M.-A., Sarazin, N., Magis, M., Tordjman, M., Morvan, E., Aubry, R., di Persio, J., Grimbert, B.

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GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application von di Forte Poisson, M.-A., Magis, M., Tordjman, M., Di Persio, J., Langer, R., Toth, L., Pecz, B., Guziewicz, M., Thorpe, J., Aubry, R., Morvan, E., Sarazin, N., Gaquière, C., Meneghesso, G., Hoel, V., Jacquet, J.-C., Delage, S.

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LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide: application to HEMT devices von di Forte Poisson, M.-A., Magis, M., Tordjman, M., Aubry, R., Sarazin, N., Peschang, M., Morvan, E., Delage, S.L., di Persio, J., Quéré, R., Grimbert, B., Hoel, V., Delos, E., Ducatteau, D., Gaquiere, C.

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Advances and challenges in neurostimulation for headaches von Magis, Delphine, MD, Schoenen, Jean, Prof

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Structural characterisation of GaAlN/GaN HEMT heterostructures von Sarazin, N., Durand, O., Magis, M., di Forte Poisson, M.-A., Di Persio, J.

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Contraction of aluminum oxide thin layers in optical heterostructures von Durand, O., Wyckzisk, F., Olivier, J., Magis, M., Galtier, P., De Rossi, A., Calligaro, M., Ortiz, V., Berger, V., Leo, G., Assanto, G.

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III-Nitrides semiconductor compounds for microwave devices von di Forte-Poisson, M. A., Magis, M., Sarazin, N., Tordjman, M., di Persio, J.

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LPMOCVD growth of GaN on silicon carbide von di Forte-Poisson, M.-A., Romann, A., Tordjman, M., Magis, M., Di Persio, J., Jacques, Ch, Vicente, P.

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Characteristics of Al2O3/AllnN/GaN MOSHEMT von Medjdoub, F, Sarazin, N., Tordjman, M., Magis, M., Di Forte-Poisson, M.A., Knez, M., Delos, E., Gaquière, Christophe, Delage, S.L., Kohn, E.

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Occipital nerve stimulation for drug-resistant chronic cluster headache: a prospective pilot study von Magis, Delphine, MD, Allena, Marta, MD, Bolla, Monica, MD, De Pasqua, Victor, Phy, Remacle, Jean-Michel, MD, Schoenen, Jean, Prof

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Growth Optimisation of GaInN/GaN Multiple Quantum Well Structures: Application to RCLED Devices von Di Forte-Poisson, M.A., Romann, A., Tordjman, M., Magis, M., di Persio, J.

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MOCVD growth of group III nitrides for high power, high frequency applications von di Forte Poisson, M.-A., Magis, M., Tordjman, M., Sarazin, N., Persio, J. di

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The Emerging HIV Epidemic on the Mexico-U.S. Border: An International Case Study Characterizing the Role of Epidemiology in Surveillance and Response von Strathdee, Steffanie A., PhD, Magis-Rodriguez, Carlos, MD, MPH, PhD, Mays, Vickie M., PhD, MSPH, Jimenez, Richard, DrPH, Patterson, Thomas L., PhD

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