Achieving 9.6% efficiency in 304 nm p-AlGaN UVB LED via increasing the holes injection and light reflectance von Khan, M. Ajmal, Maeda, Noritoshi, Yun, Joosun, Jo, Masafumi, Yamada, Yoichi, Hirayama, Hideki

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Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes von Hirayama, Hideki, Maeda, Noritoshi, Fujikawa, Sachie, Toyoda, Shiro, Kamata, Norihiko

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High internal quantum efficiency and optically pumped stimulated emission in AlGaN-based UV-C multiple quantum wells von Murotani, Hideaki, Tanabe, Ryohei, Hisanaga, Keisuke, Hamada, Akira, Beppu, Kanta, Maeda, Noritoshi, Khan, M. Ajmal, Jo, Masafumi, Hirayama, Hideki, Yamada, Yoichi

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Improving the Efficiency of AlGaN Deep‐UV LEDs by Using Highly Reflective Ni/Al p‐Type Electrodes von Maeda, Noritoshi, Jo, Masafumi, Hirayama, Hideki

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Correlation between excitons recombination dynamics and internal quantum efficiency of AlGaN-based UV-A multiple quantum wells von Murotani, Hideaki, Miyoshi, Hiroyuki, Takeda, Ryohei, Nakao, Hiroki, Ajmal Khan, M., Maeda, Noritoshi, Jo, Masafumi, Hirayama, Hideki, Yamada, Yoichi

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Realization of high-efficiency deep-UV LEDs using transparent p-AlGaN contact layer von Maeda, Noritoshi, Hirayama, Hideki

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Improving the Light‐Extraction Efficiency of AlGaN DUV‐LEDs by Using a Superlattice Hole Spreading Layer and an Al Reflector von Maeda, Noritoshi, Jo, Masafumi, Hirayama, Hideki

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Enhancing the light-extraction efficiency of AlGaN deep-ultraviolet light-emitting diodes using highly reflective Ni/Mg and Rh as p-type electrodes von Maeda, Noritoshi, Yun, Joosun, Jo, Masafumi, Hirayama, Hideki

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High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer von Kashima, Yukio, Maeda, Noritoshi, Matsuura, Eriko, Jo, Masafumi, Iwai, Takeshi, Morita, Toshiro, Kokubo, Mitsunori, Tashiro, Takaharu, Kamimura, Ryuichiro, Osada, Yamato, Takagi, Hideki, Hirayama, Hideki

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Beyond 53% internal quantum efficiency in a AlGaN quantum well at 326 nm UVA emission and single-peak operation of UVA LED von Khan, M. Ajmal, Takeda, Ryohei, Yamada, Yoichi, Maeda, Noritoshi, Jo, Masafumi, Hirayama, Hideki

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Impact of Mg level on lattice relaxation in a p-AlGaN hole source layer and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters von Khan, M Ajmal, Bermundo, Juan Paolo, Ishikawa, Yasuaki, Ikenoue, Hiroshi, Fujikawa, Sachie, Matsuura, Eriko, Kashima, Yukio, Maeda, Noritoshi, Jo, Masafumi, Hirayama, Hideki

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External Quantum Efficiency of 6.5% at 300 nm Emission and 4.7% at 310 nm Emission on Bare Wafer of AlGaN-Based UVB LEDs von Khan, M. Ajmal, Itokazu, Yuri, Maeda, Noritoshi, Jo, Masafumi, Yamada, Yoichi, Hirayama, Hideki

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Performance Improvement of AlN Crystal Quality Grown on Patterned Si(111) Substrate for Deep UV-LED Applications von Tran, Binh Tinh, Maeda, Noritoshi, Jo, Masafumi, Inoue, Daishi, Kikitsu, Tomoka, Hirayama, Hideki

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Improved external quantum efficiency of 293 nm AlGaN UVB LED grown on an AlN template von Khan, M. Ajmal, Matsumoto, Takuma, Maeda, Noritoshi, Kamata, Norihiko, Hirayama, Hideki

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Evaluation of internal quantum efficiency and stimulated emission characteristics in AlGaN-based multiple quantum wells von Yamada, Yoichi, Murotani, Hideaki, Maeda, Noritoshi, Khan, M. Ajmal, Jo, Masafumi, Hirayama, Hideki

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Direct Growth and Controlled Coalescence of Thick AlN Template on Micro-circle Patterned Si Substrate von Tran, Binh Tinh, Hirayama, Hideki, Maeda, Noritoshi, Jo, Masafumi, Toyoda, Shiro, Kamata, Norihiko

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High-quality AlN template grown on a patterned Si(111) substrate von Tran, Binh Tinh, Hirayama, Hideki, Jo, Masafumi, Maeda, Noritoshi, Inoue, Daishi, Kikitsu, Tomoka

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Beyond 53% internal quantum efficiency in a AlGaN quantum well at 326  nm UVA emission and single-peak operation of UVA LED: publisher's note von Ajmal Khan, M, Takeda, Ryohei, Yamada, Yoichi, Maeda, Noritoshi, Jo, Masafumi, Hirayama, Hideki

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Superlattice period dependence on nonradiative recombination centers in the n-AlGaN layer of UV-B region revealed by below-gap excitation light von Hossain, M. Ismail, Itokazu, Yuri, Kuwaba, Shunsuke, Kamata, Norihiko, Maeda, Noritoshi, Hirayama, Hideki

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Enhanced Strain Relaxation in AlGaN Layers Grown on Sputter‐Based AlN Templates von Mogami, Yosuke, Osawa, Atsushi, Ozaki, Kazuto, Tanioka, Yukitake, Maeoka, Atsushi, Itokazu, Yuri, Kuwaba, Shunsuke, Jo, Masafumi, Maeda, Noritoshi, Yaguchi, Hiroyuki, Hirayama, Hideki

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