Fabrication of low-loss photonic wires in silicon-on-insulator using hydrogen silsesquioxane electron-beam resist von GNAN, M, THOMS, S, MACINTYRE, D. S, DE LA RUE, R. M, SOREL, M

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Arrays of nano-dots for cellular engineering von Gadegaard, N., Thoms, S., Macintyre, D.S., Mcghee, K., Gallagher, J., Casey, B., Wilkinson, C.D.W.

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Lithography scaling issues associated with III–V MOSFETs von Ignatova, O., Thoms, S., Jansen, W., Macintyre, D.S., Thayne, I.

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A study of resist flow during nanoimprint lithography von Macintyre, D.S., Thoms, S.

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Tilt-corrected stitching for electron beam lithography von Thoms, S., Macintyre, D.S.

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Nanometre scale overlay and stitch metrology using an optical microscope von Macintyre, D.S., Thoms, S.

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High resolution e-beam lithography using a thin titanium layer to promote resist adhesion von Macintyre, D.S., Young, I., Glidle, A., Cao, X., Weaver, J.M.R., Thoms, S.

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High electron mobility transistors fabricated by nanoimprint lithography von Chen, Y., Macintyre, D.S., Boyd, E., Moran, D., Thayne, I., Thoms, S.

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Novel technologies for the realisation of GaAs pHEMTs with 120 nm self-aligned and nanoimprinted T-gates von Moran, D., Boyd, E., McLelland, H., Elgaid. Y. Chen, K., Macintyre, D.S., Thoms, S., Stanley, C.R., Thayne, I.G.

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A non-destructive method for the removal of residual resist in imprinted patterns von Chen, Y., Macintyre, D.S., Thoms, S.

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Effect of resist sensitivity ratio on T-gate fabrication von Chen, Y., Macintyre, D. S., Thoms, S.

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Sub - 35 nm metal gratings fabricated using PMMA with high contrast developers von Thoms, S., Macintyre, D.S., McCarthy, M.

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Pattern transfer of a 23 nm-period grating and sub-15 nm dots into CVD diamond von LISTER, K. A, CASEY, B. G, DOBSON, P. S, THOMS, S, MACINTYRE, D. S, WILKINSON, C. D. W, WEAVER, J. M. R

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Comparison of hydrogen silsesquioxane development methods for sub-10 nm electron beam lithography using accurate linewidth inspection von Macintyre, D. S., Thoms, S.

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Pattern transfer of a 23 nm-period grating and sub-15 nm dots into CVD diamond von Lister, K.A., Casey, B.G., Dobson, P.S., Thoms, S., Macintyre, D.S., Wilkinson, C.D.W., Weaver, J.M.R.

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Linewidth metrology for sub-10-nm lithography von Thoms, S., Macintyre, D. S.

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Imprint lithography issues in the fabrication of high electron mobility transistors von Thoms, S., Macintyre, D. S., Moran, D., Thayne, I.

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Nanoimprint induced electrical type conversion in HgCdTe von Martyniuk, M, Umana-Membreno, G A, Sewell, R H, Westerhout, R, Musca, C A, Dell, J M, Antoszewski, J, Faraone, L, Macintyre, D S, Thoms, S, Ironside, C N

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Fabrication of ultrashort T gates using a PMMA/LOR/UVIII resist stack von Chen, Y., Macintyre, D. S., Cao, X., Boyd, E., Moran, D., McLelland, H., Holland, M., Stanley, C. R., Thayne, I., Thoms, S.

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Nanoimprint lithography process optimization for the fabrication of high electron mobility transistors von Macintyre, D. S., Chen, Y., Gourlay, D., Boyd, E., Moran, D., Cao, X., Elgaid, K., Stanley, C. R., Thayne, I., Thoms, S.

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