Effect of high temperature homoepitaxial growth of β-Ga2O3 by hot-wall metalorganic vapor phase epitaxy von Ikenaga, Kazutada, Tanaka, Nami, Nishimura, Taro, Iino, Hirotaka, Goto, Ken, Ishikawa, Masato, Machida, Hideaki, Ueno, Tomo, Kumagai, Yoshinao

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Band gap-tuned MoS2(1−x)Te2x thin films synthesized by a hybrid Co-sputtering and post-deposition tellurization annealing process von Hibino, Yusuke, Ishihara, Seiya, Sawamoto, Naomi, Ohashi, Takumi, Matsuura, Kentarou, Machida, Hideaki, Wakabayashi, Hitoshi, Ogura, Atsushi

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Role of H2 supply for Sn incorporations in MOCVD Ge1−xSnx epitaxial growth von Suda, Kohei, Sawamoto, Naomi, Machida, Hideaki, Ishikawa, Masato, Sudoh, Hiroshi, Ohshita, Yoshio, Hirosawa, Ichiro, Ogura, Atsushi

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Improving crystalline quality of sputtering-deposited MoS2 thin film by postdeposition sulfurization annealing using (t-C4H9)2S2 von Ishihara, Seiya, Hibino, Yusuke, Sawamoto, Naomi, Suda, Kohei, Ohashi, Takumi, Matsuura, Kentarou, Machida, Hideaki, Ishikawa, Masato, Sudoh, Hiroshi, Wakabayashi, Hitoshi, Ogura, Atsushi

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Properties of single-layer MoS2 film fabricated by combination of sputtering deposition and post deposition sulfurization annealing using (t-C4H9)2S2 von Ishihara, Seiya, Hibino, Yusuke, Sawamoto, Naomi, Suda, Kohei, Ohashi, Takumi, Matsuura, Kentarou, Machida, Hideaki, Ishikawa, Masato, Sudoh, Hiroshi, Wakabayashi, Hitoshi, Ogura, Atsushi

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N-H related defects in GaAsN grown through chemical beam epitaxy von Ohshita, Yoshio, Ikeda, Kazuma, Suzuki, Hidetoshi, Machida, Hideaki, Sudoh, Hiroshi, Tanaka, Tomohiro, Honda, Takahiko, Inagaki, Makoto, Yamaguchi, Masafumi

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Ge2Sb2Te5 Film Fabrication by Tellurization of Chemical Vapor Deposited GeSb von Suda, Kohei, Uno, Tomohiro, Miyakawa, Tatsuya, Sawamoto, Naomi, Machida, Hideaki, Ishikawa, Masato, Sudoh, Hiroshi, Ohshita, Yoshio, Ogura, Atsushi

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Ge1-xSnx Epitaxial Growth on Ge Substrate by MOCVD von Suda, Kohei, Ishihara, Seiya, Sawamoto, Naomi, Machida, Hideaki, Ishikawa, Masato, Sudoh, Hiroshi, Ohshita, Yoshio, Ogura, Atsushi

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Evaluation of GexSbyTez Film Grown by Chemical Vapor Deposition von Ohshita, Yoshio, Horiike, Takafumi, Uno, Tomohiro, Ishikawa, Masato, Machida, Hideaki, Ogura, Atsushi, Hamada, Seiti

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GeSn Film Deposition Using Metal Organic Chemical Vapor Deposition von Suda, Kohei, Uno, Tomohiro, Miyakawa, Tatsuya, Machida, Hideaki, Ishikawa, Masato, Sudo, Hiroshi, Ohshita, Yoshio, Ogura, Atsushi

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Effects of source gas molecules on N-H- and N-D-related defect formations in GaAsN grown by chemical beam epitaxy von Ikeda, Kazuma, Ohshita, Yoshio, Tanaka, Tomohiro, Honda, Takahiko, Inagaki, Makoto, Demizu, Koshiro, Kojima, Nobuaki, Suzuki, Hidetoshi, Machida, Hideaki, Sudoh, Hiroshi, Yamaguchi, Masafumi

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Robust self-assembled monolayer as diffusion barrier for copper metallization von Mikami, Noboru, Hata, Nobuhiro, Kikkawa, Takamaro, Machida, Hideaki

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Thermodynamic and experimental studies of β-Ga2O3 growth by metalorganic vapor phase epitaxy von Goto, Ken, Ikenaga, Kazutada, Tanaka, Nami, Ishikawa, Masato, Machida, Hideaki, Kumagai, Yoshinao

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Atomic Layer Deposition of Thin VNx Film from Tetrakis(diethylamido)vanadium Precursor von Takeyama, Mayumi B, Sato, Masaru, Sudoh, Hiroshi, Machida, Hideaki, Ito, Shun, Aoyagi, Eiji, Noya, Atsushi

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Chemical Vapor Deposition of GeSbTe Thin Films for Next-Generation Phase Change Memory von Machida, Hideaki, Hamada, Seichi, Horiike, Takafumi, Ishikawa, Masato, Ogura, Atsushi, Ohshita, Yoshio, Ohba, Takayuki

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Comparison of triethylgallium and diethylgallium ethoxide for β-Ga2O3 growth by metalorganic vapor phase epitaxy von Goto, Ken, Nishimura, Taro, Ishikawa, Masato, Okuyama, Takahito, Tozato, Haruka, Sasaki, Shogo, Ikenaga, Kazutada, Takinami, Yoshihiko, Machida, Hideaki, Kumagai, Yoshinao

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Effect of Phosphorus Atom in Self-Assembled Monolayer as a Drift Barrier for Advanced Copper Interconnects von Yoshino, Takenobu, Hata, Nobuhiro, Muramoto, Ikuyo, Machida, Hideaki, Kikkawa, Takamaro

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Novel liquid cobalt precursor for metal atomic layer deposition von Numasawa, Yohichiroh, Machida, Hideaki, Ishikawa, Masato, Sudoh, Hiroshi, Hasegawa, Yosiharu, Lee, Hyunju, Ohshita, Yoshio

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Using tetrakis-diethylamido-hafnium for HfO2 thin-film growth in low-pressure chemical vapor deposition von OHSHITA, Yoshio, OGURA, Atsushi, HOSHINO, Asako, HIIRO, Shigeki, SUZUKI, Toshie, MACHIDA, Hideaki

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Mass spectrometric study of β-Ga2O3 growth process by metalorganic vapor phase epitaxy von Ikenaga, Kazutada, Okuyama, Takahito, Tozato, Haruka, Nishimura, Taro, Sasaki, Shogo, Goto, Ken, Ishikawa, Masato, Takinami, Yoshihiko, Machida, Hideaki, Kumagai, Yoshinao

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