Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures von Zakgeim, A. L., Il’inskaya, N. D., Karandashev, S. A., Lavrov, A. A., Matveev, B. A., Remennyy, M. A., Stus’, N. M., Usikova, A. A., Cherniakov, A. E.

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InAsSbP Photodiodes for 2.6–2.8-μm Wavelengths von Il’inskaya, N. D., Karandashev, S. A., Lavrov, A. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Usikova, A. A.

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Photoacoustic effect induced by negative luminescence device von Kuusela, T., Peura, J., Matveev, B. A., Remennyy, M. A., Stus', N. M.

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Cooled P-InAsSbP/n-InAs/N-InAsSbP double heterostructure photodiodes von Brunkov, P.N., Il'inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus', N.M., Usikova, A.A.

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Current-voltage characteristics and photocurrent collection in radially symmetric front-surface-illuminated InAsSb(P) photodiodes von Karandashev, S. A., Matveev, B. A., Ratushnyi, V. I., Remennyi, M. A., Rybal’chenko, A. Yu, Stus’, N. M.

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P-InAsSbP/p-InAs0.88Sb0.12/n-InAs0.88Sb0.12/n+-InAs PDs with a smooth p-n junction von Il'inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus', N.M., Usikova, A.A.

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Sources of spontaneous emission based on indium arsenide von Zotova, N. V., Il’inskaya, N. D., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M.

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Photoacoustic gas detection using a cantilever microphone and III–V mid-IR LEDs von Kuusela, T., Peura, J., Matveev, B.A., Remennyy, M.A., Stus’, N.M.

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Low dark current P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure back-side illuminated photodiodes von Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Karpukhina, N.G., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.

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Current crowding in InAsSb light-emitting diodes von Malyutenko, V. K., Malyutenko, O. Yu, Podoltsev, A. D., Kucheryavaya, I. N., Matveev, B. A., Remennyi, M. A., Stus’, N. M.

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Array of InGaAsSb light-emitting diodes (λ = 3.7 μm) von Zakheim, A. L., Zotova, N. V., Il’inskaya, N. D., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Usikova, A. A., Chernyakov, A. E.

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InAs and InAsSb LEDs with built-in cavities von Aidaraliev, M, Zotova, N V, Il'inskaya, N D, Karandashev, S A, Matveev, B A, Remennyi, M A, Stus', N M, Talalakin, G N

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The flip-chip InGaAsSb/GaSb LEDs emitting at a wavelength of 1.94 μm von Zotova, N. V., Il’inskaya, N. D., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Shlenskiĭ, A. A.

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6 W InGaAsSb(Gd)/InAsSbP double-heterostructure diode lasers emitting at λ=3.3 μm von Aydaraliev, M., Zotova, N. V., Karandashov, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Talalakin, G. N., Bewley, W. W., Lindle, J. R., Meyer, J. R.

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Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes von Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyy, M. A., Rybal’chenko, A. Yu, Stus’, N. M.

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Cooled photodiodes based on a type-II single p-InAsSbP/n-InAs heterostructure von Il’inskaya, N. D., Karandashev, S. A., Latnikova, N. M., Lavrov, A. A., Matveev, B. A., Petrov, A. S., Remennyi, M. A., Sevost’yanov, E. N., Stus’, N. M.

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Uncooled photodiodes based on InAsSb(P) with long-wavelength cut-off at λ = 5.8 μm von Il’inskaya, N. D., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M.

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Nonuniformity in the spatial distribution of negative luminescence in InAsSb(P) photodiodes (long-wavelength cutoff λ0.1 = 5.2 μm) von Karandashev, S. A., Matveev, B. A., Mzhelskii, I. V., Polovinkin, V. G., Remennyi, M. A., Rybal’chenko, A. Yu, Stus’, N. M.

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Front surface illuminated InAsSb photodiodes (long-wavelength cutoff λ0.1 = 4.5 μm) operating at temperatures of 25–80°C von Il’inskaya, N. D., Zakgeim, A. L., Karandashev, S. A., Matveev, B. A., Ratushnyi, V. I., Remennyy, M. A., Rybal’chenko, A. Yu, Stus’, N. M., Chernyakov, A. E.

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Room-temperature broadband InAsSb flip-chip photodiodes with λcut off = 4.5 μm von Zakhgeim, A. L., Zotova, N. V., Il’inskaya, N. D., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Chernyakov, A. E.

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