P-InAsSbP/p-InAs0.88Sb0.12/n-InAs0.88Sb0.12/n+-InAs PDs with a smooth p-n junction von Il'inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus', N.M., Usikova, A.A.

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Low dark current P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure back-side illuminated photodiodes von Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Karpukhina, N.G., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.

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Photoacoustic effect induced by negative luminescence device von Kuusela, T., Peura, J., Matveev, B. A., Remennyy, M. A., Stus', N. M.

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Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures von Zakgeim, A. L., Il’inskaya, N. D., Karandashev, S. A., Lavrov, A. A., Matveev, B. A., Remennyy, M. A., Stus’, N. M., Usikova, A. A., Cherniakov, A. E.

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InAsSbP Photodiodes for 2.6–2.8-μm Wavelengths von Il’inskaya, N. D., Karandashev, S. A., Lavrov, A. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Usikova, A. A.

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Cooled P-InAsSbP/n-InAs/N-InAsSbP double heterostructure photodiodes von Brunkov, P.N., Il'inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus', N.M., Usikova, A.A.

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Current-voltage characteristics and photocurrent collection in radially symmetric front-surface-illuminated InAsSb(P) photodiodes von Karandashev, S. A., Matveev, B. A., Ratushnyi, V. I., Remennyi, M. A., Rybal’chenko, A. Yu, Stus’, N. M.

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Sources of spontaneous emission based on indium arsenide von Zotova, N. V., Il’inskaya, N. D., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M.

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InAs and InAsSb LEDs with built-in cavities von Aidaraliev, M, Zotova, N V, Il'inskaya, N D, Karandashev, S A, Matveev, B A, Remennyi, M A, Stus', N M, Talalakin, G N

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Photoacoustic gas detection using a cantilever microphone and III–V mid-IR LEDs von Kuusela, T., Peura, J., Matveev, B.A., Remennyy, M.A., Stus’, N.M.

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Array of InGaAsSb light-emitting diodes (λ = 3.7 μm) von Zakheim, A. L., Zotova, N. V., Il’inskaya, N. D., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Usikova, A. A., Chernyakov, A. E.

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Current crowding in InAsSb light-emitting diodes von Malyutenko, V. K., Malyutenko, O. Yu, Podoltsev, A. D., Kucheryavaya, I. N., Matveev, B. A., Remennyi, M. A., Stus’, N. M.

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High power InGaAsSb(Gd)/InAsSbP double heterostructure lasers (λ=3.3 µm) von Aydaraliev, M., Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Talalakin, G. N.

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The flip-chip InGaAsSb/GaSb LEDs emitting at a wavelength of 1.94 μm von Zotova, N. V., Il’inskaya, N. D., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Shlenskiĭ, A. A.

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Negative luminescence in p-InAsSbP/n-InAs diodes von Aidaraliev, M., Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Talalakin, G. N.

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6 W InGaAsSb(Gd)/InAsSbP double-heterostructure diode lasers emitting at λ=3.3 μm von Aydaraliev, M., Zotova, N. V., Karandashov, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Talalakin, G. N., Bewley, W. W., Lindle, J. R., Meyer, J. R.

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Cooled photodiodes based on a type-II single p-InAsSbP/n-InAs heterostructure von Il’inskaya, N. D., Karandashev, S. A., Latnikova, N. M., Lavrov, A. A., Matveev, B. A., Petrov, A. S., Remennyi, M. A., Sevost’yanov, E. N., Stus’, N. M.

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Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes von Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyy, M. A., Rybal’chenko, A. Yu, Stus’, N. M.

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Strongly compensated InAs obtained by proton irradiation von Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Voronova, N. A., Gusinskii, G. M., Naidenov, V. O.

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Uncooled photodiodes based on InAsSb(P) with long-wavelength cut-off at λ = 5.8 μm von Il’inskaya, N. D., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M.

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