Dielectric permittivity, conductivity and breakdown field of hexagonal boron nitride von Pierret, A, Mele, D, Graef, H, Palomo, J, Taniguchi, T, Watanabe, K, Li, Y, Toury, B, Journet, C, Steyer, P, Garnier, V, Loiseau, A, Berroir, J-M, Bocquillon, E, Fève, G, Voisin, C, Baudin, E, Rosticher, M, Plaçais, B

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Mesoscopic Klein-Schwinger effect in graphene von Schmitt, A., Vallet, P., Mele, D., Rosticher, M., Taniguchi, T., Watanabe, K., Bocquillon, E., Fève, G., Berroir, J. M., Voisin, C., Cayssol, J., Goerbig, M. O., Troost, J., Baudin, E., Plaçais, B.

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Edge mode engineering for optimal ultracoherent silicon nitride membranes von Ivanov, E., Capelle, T., Rosticher, M., Palomo, J., Briant, T., Cohadon, P.-F., Heidmann, A., Jacqmin, T., Deléglise, S.

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A corner reflector of graphene Dirac fermions as a phonon-scattering sensor von Graef, H., Wilmart, Q., Rosticher, M., Mele, D., Banszerus, L., Stampfer, C., Taniguchi, T., Watanabe, K., Berroir, J.-M., Bocquillon, E., Fève, G., Teo, E. H. T., Plaçais, B.

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One Hundred Second Bit-Flip Time in a Two-Photon Dissipative Oscillator von Berdou, C., Murani, A., Réglade, U., Smith, W.C., Villiers, M., Palomo, J., Rosticher, M., Denis, A., Morfin, P., Delbecq, M., Kontos, T., Pankratova, N., Rautschke, F., Peronnin, T., Sellem, L.-A., Rouchon, P., Sarlette, A., Mirrahimi, M., Campagne-Ibarcq, P., Jezouin, S., Lescanne, R., Leghtas, Z.

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High-Sensitivity ac-Charge Detection with a MHz-Frequency Fluxonium Qubit von Najera-Santos, B.-L., Rousseau, R., Gerashchenko, K., Patange, H., Riva, A., Villiers, M., Briant, T., Cohadon, P.-F., Heidmann, A., Palomo, J., Rosticher, M., le Sueur, H., Sarlette, A., Smith, W. C., Leghtas, Z., Flurin, E., Jacqmin, T., Deléglise, S.

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Effective photoconductivity of exfoliated black phosphorus for optoelectronic switching under 1.55  μ m optical excitation von Penillard, A., Tripon-Canseliet, C., Rosticher, M., Maksimovic, I., Liu, Z., Géron, E.

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Contact gating at GHz frequency in graphene von Wilmart, Q., Inhofer, A., Boukhicha, M., Yang, W., Rosticher, M., Morfin, P., Garroum, N., Fève, G., Berroir, J.-M., Plaçais, B.

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Electron cotunneling transport in gold nanocrystal arrays von Moreira, H, Yu, Q, Nadal, B, Bresson, B, Rosticher, M, Lequeux, N, Zimmers, A, Aubin, H

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Optoelectronic Mixing in High-Mobility Graphene von Hamidouche, L, Montanaro, A, Rosticher, M, Grimaldi, E, Poupet, B, Taniguchi, T, Watanabe, K, Plaçais, B, Baudin, E, Legagneux, P

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Microwave surface transport in narrow-bandgap PdSe2 -MOSFETs von Le Goff, R, Rosticher, M, Peng, Y, Liu, Z, Taniguchi, T, Watanabe, K, Berroir, J-M, Bocquillon, E, Fève, G, Voisin, C, Chazelas, J, Plaçais, B, Baudin, E

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A high efficiency superconducting nanowire single electron detector von Rosticher, M., Ladan, F. R., Maneval, J. P., Dorenbos, S. N., Zijlstra, T., Klapwijk, T. M., Zwiller, V., Lupaşcu, A., Nogues, G.

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Ultra-long wavelength Dirac plasmons in graphene capacitors von Graef, H, Mele, D, Rosticher, M, Banszerus, L, Stampfer, C, Taniguchi, T, Watanabe, K, Bocquillon, E, Fève, G, Berroir, J-M, Teo, E H T, Plaçais, B

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Frequency tunable terahertz interdigitated photoconductive antennas von MADEO, J, JUKAM, N, OUSTINOV, D, ROSTICHER, M, RUNGSAWANG, R, TIGNON, J, DHILLON, S. S

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Temperature Profile of Hotspots in Narrow Current-Biased Superconducting Strips von Maneval, J. P., Harrabi, K., Chibane, F., Rosticher, M., Ladan, F. R., Mathieu, P.

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Current-Temperature Diagram of Resistive States in Long Superconducting Niobium Filaments von Ladan, F.-R., Harrabi, K., Rosticher, M., Mathieu, P., Maneval, J.-P., Villard, C.

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Effective photoconductivity of exfoliated black phosphorus for optoelectronic switching under 1.55 μm optical excitation Effective photoconductivity of exfoliated black phosphorus... von Penillard, A, Tripon-Canseliet, C, Rosticher, M, Maksimovic, I, Liu, Z, Géron, E G

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Magnetoexciton limit of quantum Hall breakdown in graphene von Schmitt, A., Rosticher, M., Taniguchi, T., Watanabe, K., Berroir, J. M., Ménard, G., Voisin, C., Fève, G., Goerbig, M. O., Plaçais, B., Baudin, E.

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High-field 1 / f noise in hBN-encapsulated graphene transistors von Schmitt, A., Mele, D., Rosticher, M., Taniguchi, T., Watanabe, K., Maestre, C., Journet, C., Garnier, V., Fève, G., Berroir, J. M., Voisin, C., Plaçais, B., Baudin, E.

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Electroluminescence of the graphene 2D semi-metal von Schmitt, A, Abou-Hamdan, L, Tharrault, M, Rossetti, S, Mele, D, Bretel, R, Pierret, A, Rosticher, M, Morfin, P, Taniguchi, T, Watanabe, K, Berroir, J. M, Fève, G, Ménard, G, Plaçais, B, Voisin, C, Hugonin, J. P, Greffet, J. J, Bouchon, P, De Wilde, Y, Baudin, E

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