Lattice Location of Mg in GaN: A Fresh Look at Doping Limitations von Wahl, U, Amorim, L M, Augustyns, V, Costa, A, David-Bosne, E, Lima, T A L, Lippertz, G, Correia, J G, da Silva, M R, Kappers, M J, Temst, K, Vantomme, A, Pereira, L M C

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Efficiency droop in zincblende InGaN/GaN quantum wells von Dyer, D, Church, S. A, Ahumada-Lazo, R, Kappers, M. J, Halsall, M. P, Parkinson, P, Wallis, D. J, Oliver, R. A, Binks, D. J

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Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures von Massabuau, F. C.-P., Sahonta, S.-L., Trinh-Xuan, L., Rhode, S., Puchtler, T. J., Kappers, M. J., Humphreys, C. J., Oliver, R. A.

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The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures von Hammersley, S., Watson-Parris, D., Dawson, P., Godfrey, M. J., Badcock, T. J., Kappers, M. J., McAleese, C., Oliver, R. A., Humphreys, C. J.

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Critical thickness calculations for InGaN/GaN von Holec, D., Costa, P.M.F.J., Kappers, M.J., Humphreys, C.J.

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Carrier localization in the vicinity of dislocations in InGaN von Massabuau, F. C-P., Chen, P., Horton, M. K., Rhode, S. L., Ren, C. X., O'Hanlon, T. J., Kovács, A., Kappers, M. J., Humphreys, C. J., Dunin-Borkowski, R. E., Oliver, R. A.

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Defect-Induced Ferromagnetism in Co-doped ZnO von Khare, N., Kappers, M. J., Wei, M., Blamire, M. G., MacManus-Driscoll, J. L.

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The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem von Massabuau, F. C.-P., Davies, M. J., Oehler, F., Pamenter, S. K., Thrush, E. J., Kappers, M. J., Kovács, A., Williams, T., Hopkins, M. A., Humphreys, C. J., Dawson, P., Dunin-Borkowski, R. E., Etheridge, J., Allsopp, D. W. E., Oliver, R. A.

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Characterization of buried interfaces using Ga Kα hard X-ray photoelectron spectroscopy (HAXPES) von Spencer, B. F, Church, S. A, Thompson, P, Cant, D. J. H, Maniyarasu, S, Theodosiou, A, Jones, A. N, Kappers, M. J, Binks, D. J, Oliver, R. A, Higgins, J, Thomas, A. G, Thomson, T, Shard, A. G, Flavell, W. R

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Mg doping affects dislocation core structures in GaN von Rhode, S K, Horton, M K, Kappers, M J, Zhang, S, Humphreys, C J, Dusane, R O, Sahonta, S -L, Moram, M A

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Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges von Oehler, F., Zhu, T., Rhode, S., Kappers, M.J., Humphreys, C.J., Oliver, R.A.

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Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3 von OLIVER, R. A, KAPPERS, M. J, SUMNER, J, DATTA, R, HUMPHREYS, C. J

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Microstructural origins of localization in InGaN quantum wells von Oliver, R A, Bennett, S E, Zhu, T, Beesley, D J, Kappers, M J, Saxey, D W, Cerezo, A, Humphreys, C J

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Structure and strain relaxation effects of defects in InxGa1−xN epilayers von Rhode, S L, Fu, W Y, C-P, Massabuau F, Kappers, M J, McAleese, C, Oehler, F, Humphreys, C J, Dusane, R O, Sahonta S–L

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The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures von Davies, M. J., Dawson, P., Massabuau, F. C.-P., Oliver, R. A., Kappers, M. J., Humphreys, C. J.

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The effect of dislocations on the efficiency of InGaN/GaN solar cells von Zhang, Y., Kappers, M.J., Zhu, D., Oehler, F., Gao, F., Humphreys, C.J.

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Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers von KAPPERS, M. J, DATTA, R, OLIVER, R. A, RAYMENT, F. D. G, VICKERS, M. E, HUMPHREYS, C. J

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Photoluminescence studies of cubic GaN epilayers von Church, S. A., Hammersley, S., Mitchell, P. W., Kappers, M. J., Sahonta, S. L., Frentrup, M., Nilsson, D., Ward, P. J., Shaw, L. J., Wallis, D. J., Humphreys, C. J., Oliver, R. A., Binks, D. J., Dawson, P.

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The influence of coalescence time on unintentional doping in GaN/sapphire von Das Bakshi, S., Sumner, J., Kappers, M.J., Oliver, R.A.

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Luminescence of Eu3+ in GaN(Mg, Eu): Transitions from the 5D1 level von Singh, A. K., O'Donnell, K. P., Edwards, P. R., Cameron, D., Lorenz, K., Kappers, M. J., Boćkowski, M., Yamaga, M., Prakash, R.

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