Bandgap opening of ferric chloride intercalated graphene by applying small electric field von Indika Senevirathna, M. K., Samarakoon, Duminda K., Gunasinghe, Rosi, Wang, Xiao-Qian, Williams, Michael D.

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Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy von Azizie, Kathy, Hensling, Felix V. E., Gorsak, Cameron A., Kim, Yunjo, Pieczulewski, Naomi A., Dryden, Daniel M., Senevirathna, M. K. Indika, Coye, Selena, Shang, Shun-Li, Steele, Jacob, Vogt, Patrick, Parker, Nicholas A., Birkhölzer, Yorick A., McCandless, Jonathan P., Jena, Debdeep, Xing, Huili G., Liu, Zi-Kui, Williams, Michael D., Green, Andrew J., Chabak, Kelson, Muller, David A., Neal, Adam T., Mou, Shin, Thompson, Michael O., Nair, Hari P., Schlom, Darrell G.

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Thermal stability of InN epilayers grown by high pressure chemical vapor deposition von Acharya, Ananta R., Gamage, Sampath, Senevirathna, M.K. Indika, Alevli, Mustafa, Bahadir, Kucukgok, Melton, Andrew G., Ferguson, Ian, Dietz, Nikolaus, Thoms, Brian D.

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Effect of reactor pressure on the electrical and structural properties of InN epilayers grown by high-pressure chemical vapor deposition von Indika Senevirathna, M. K., Gamage, Sampath, Atalay, Ramazan, Acharya, Ananta R., Unil Perera, A. G., Dietz, Nikolaus, Buegler, Max, Hoffmann, Axel, Su, Liqin, Melton, Andrew, Ferguson, Ian

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Dye-multilayer semiconductor nanostructures von Duleepa P. Pitigala, P.K.D., Indika Senevirathna, M.K., Susira Perera, V.P., Tennakone, Kirthi

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Analysis of useful ion yield for Si in GaN by secondary ion mass spectrometry von Senevirathna, M. K. Indika, Vernon, Mark, Cooke, Graham A., Cross, Garnett B., Kozhanov, Alexander, Williams, Michael D.

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Analysis of useful ion yield for the Mg dopant in GaN by quadrupole—SIMS von Senevirathna, M. K. Indika, Williams, Michael D., Cooke, Graham A., Kozhanov, Alexander, Vernon, Mark, Cross, Garnett B.

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Silicon-doped β -Ga2O3 films grown at 1 µ m/h by suboxide molecular-beam epitaxy von Azizie, Kathy, Hensling, Felix V. E., Gorsak, Cameron A., Kim, Yunjo, Pieczulewski, Naomi A., Dryden, Daniel M., Senevirathna, M. K. Indika, Coye, Selena, Shang, Shun-Li, Steele, Jacob, Vogt, Patrick, Parker, Nicholas A., Birkhölzer, Yorick A., McCandless, Jonathan P., Jena, Debdeep, Xing, Huili G., Liu, Zi-Kui, Williams, Michael D., Green, Andrew J., Chabak, Kelson, Muller, David A., Neal, Adam T., Mou, Shin, Thompson, Michael O., Nair, Hari P., Schlom, Darrell G.

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Dye-sensitized solar cells made from nanocrystalline TiO2 films coated with outer layers of different oxide materials von Bandaranayake, K.M.P., Indika Senevirathna, M.K., Prasad Weligamuwa, P.M.G.M., Tennakone, K.

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Silicon-doped $\beta$-Ga$_2$O$_3$ films grown at 1 $\mu$m/h by suboxide molecular-beam epitaxy von Azizie, Kathy, Hensling, Felix V. E, Gorsak, Cameron A, Kim, Yunjo, Dryden, Daniel M, Senevirathna, M. K. Indika, Coye, Selena, Shang, Shun-Li, Steele, Jacob, Vogt, Patrick, Parker, Nicholas A, Birkhölzer, Yorick A, McCandless, Jonathan P, Jena, Debdeep, Xing, Huili G, Liu, Zi-Kui, Williams, Michael D, Green, Andrew J, Chabak, Kelson, Neal, Adam T, Mou, Shin, Thompson, Michael O, Nair, Hari P, Schlom, Darrell G

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Silicon-doped \(\beta\)-Ga\(_2\)O\(_3\) films grown at 1 \(\mu\)m/h by suboxide molecular-beam epitaxy von Azizie, Kathy, Hensling, Felix V E, Gorsak, Cameron A, Kim, Yunjo, Dryden, Daniel M, M K Indika Senevirathna, Coye, Selena, Shun-Li, Shang, Steele, Jacob, Vogt, Patrick, Parker, Nicholas A, Birkhölzer, Yorick A, McCandless, Jonathan P, Jena, Debdeep, Xing, Huili G, Liu, Zi-Kui, Williams, Michael D, Green, Andrew J, Kelson Chabak, Neal, Adam T, Mou, Shin, Thompson, Michael O, Nair, Hari P, Schlom, Darrell G

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