Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials von M’foukh, Adel, Saint-Martin, Jérôme, Dollfus, Philippe, Pala, Marco

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Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α ‑In2Se3 von Kremer, Geoffroy, Mahmoudi, Aymen, M’Foukh, Adel, Bouaziz, Meryem, Rahimi, Mehrdad, Della Rocca, Maria Luisa, Le Fèvre, Patrick, Dayen, Jean-Francois, Bertran, François, Matzen, Sylvia, Pala, Marco, Chaste, Julien, Oehler, Fabrice, Ouerghi, Abdelkarim

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Full-Band Quantum Transport of Heterojunction Electron Devices With Empirical Pseudopotentials von M'foukh, Adel, Pala, Marco G., Esseni, David

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Semi-empirical and ab-initio simulation of quantum transport in nanoscale devices von M'Foukh, Adel

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Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α -In 2 Se 3 von Kremer, Geoffroy, Mahmoudi, Aymen, M’Foukh, Adel, Bouaziz, Meryem, Rahimi, Mehrdad, Della Rocca, Maria Luisa, Le Fèvre, Patrick, Dayen, Jean-Francois, Bertran, François, Matzen, Sylvia, Pala, Marco, Chaste, Julien, Oehler, Fabrice, Ouerghi, Abdelkarim

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Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric {\alpha}-In\(_{2}\)Se\(_{3}\) von Kremer, Geoffroy, Mahmoudi, Aymen, M'Foukh, Adel, Bouaziz, Meryem, Rahimi, Mehrdad, Della Rocca, Maria Luisa, Patrick Le Fèvre, Dayen, Jean-Francois, Bertran, François, Matzen, Sylvia, Pala, Marco, Chaste, Julien, Oehler, Fabrice, Ouerghi, Abdelkarim

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