Strain engineering of transverse electric and transverse magnetic mode of material gain in GeSn/SiGeSn quantum wells von Mączko, Herbert S., Kudrawiec, Robert, Gladysiewicz, Marta

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Optical gain sensitivity of BGaAs/GaP quantum wells to admixtures of group III and V atoms von Mączko, Herbert S., Kudrawiec, Robert, Gladysiewicz, Marta

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Photoreflectance studies of the band gap alignments in boron diluted BGaInAs/GaAs quantum wells von Mączko, Herbert S., El-Jaroudi, Rasha H., Kopaczek, Jan, Bank, Seth R., Kudrawiec, Robert

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Growth Advancement of GaAs-Based BGaInAs Alloys Emitting at 1.3 μm by Molecular Beam Epitaxy von El-Jaroudi, Rasha H., McNicholas, Kyle M., Mączko, Herbert S., Kudrawiec, Robert, Bank, Seth R.

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Optical Gain Characteristics of BGaAs/GaP Quantum Wells von Maczko, Herbert S., Kudrawiec, Robert, Gladysiewicz, Marta

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Electronic band structure of semiconductor alloys: From ab initio to k·p via computational alchemy, on example of Ge1-xSnx alloy von Scharoch, Paweł, Janik, Norbert, Wiśniewski, Michał, Mączko, Herbert S., Gładysiewicz, Marta, Polak, Maciej P., Kudrawiec, Robert

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Electronic band structure of semiconductor alloys: From ab initio to k · p via computational alchemy, on example of Ge 1 - x Sn x alloy von Scharoch, Paweł, Janik, Norbert, Wiśniewski, Michał, Mączko, Herbert S., Gładysiewicz, Marta, Polak, Maciej P., Kudrawiec, Robert

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Invariant expansion of the 30-band k · p model and its parameters for III-V compounds von Gawarecki, Krzysztof, Scharoch, Paweł, Wiśniewski, Michał, Ziembicki, Jakub, Mączko, Herbert S., Gładysiewicz, Marta, Kudrawiec, Robert

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Invariant expansion of the 30-band k.p model and its parameters for III-V compounds von Gawarecki, Krzysztof, Scharoch, Paweł, Wiśniewski, Michał, Ziembicki, Jakub, Mączko, Herbert S, Gładysiewicz, Marta, Kudrawiec, Robert

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