The role of the HfO2―TiN interface in capacitance―voltage nonlinearity of Metal-Insulator-Metal capacitors von WENGER, Ch, LUKOSIUS, M, WEIDNER, G, MÜSSIG, H.-J, PASKO, S, LOHE, Ch

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Dielectric and structural properties of thin SrHfO3 layers on TiN von Lupina, G., Kozłowski, G., Dabrowski, J., Dudek, P., Lippert, G., Müssig, H.-J.

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Investigation of atomic vapour deposited TiN/HfO2/SiO2 gate stacks for MOSFET devices von WENGER, Ch, LUKOSIUS, M, COSTINA, I, SORGE, R, DABROWSKI, J, MÜSSIG, H.-J, PASKO, S, LOHE, Ch

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On the band gaps and electronic structure of thin single crystalline praseodymium oxide layers on Si(111) von Seifarth, O., Dabrowski, J., Zaumseil, P., Müller, S., Schmeißer, D., Müssig, H.-J., Schroeder, T.

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Hf- and Zr-based alkaline earth perovskite dielectrics for memory applications von Łupina, G., Seifarth, O., Kozłowski, G., Dudek, P., Dąbrowski, J., Lippert, G., Müssig, H.-J.

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Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications von Walczyk, Ch, Wenger, Ch, Sohal, R., Lukosius, M., Fox, A., Dąbrowski, J., Wolansky, D., Tillack, B., Müssig, H.-J., Schroeder, T.

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Atomic -vapour -deposited HfO2 and Sr4Ta2O9 layers for metal-insulator-metal applications von LUKOSIUS, M, WENGER, Ch, SCHROEDER, T, DABROWSKI, J, SORGE, R, COSTINA, I, MÜSSIG, H.-J, PASKO, S, LOHE, Ch

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Microscopic model for the nonlinear behavior of high- k metal-insulator-metal capacitors von Wenger, Ch, Lupina, G., Lukosius, M., Seifarth, O., Müssig, H.-J., Pasko, S., Lohe, Ch

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Atomic structure of clean Si(113) surfaces: Theory and experiment von Dabrowski, J, Müssig, H, Wolff, G

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Dielectric constant and leakage of BaZrO3 films von Łupina, G., Dąbrowski, J., Dudek, P., Kozłowski, G., Zaumseil, P., Lippert, G., Fursenko, O., Bauer, J., Baristiran, C., Costina, I., Müssig, H.-J., Oberbeck, L., Schröder, U.

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Titanium-added praseodymium silicate high- k layers on Si(001) von Schroeder, T., Lupina, G., Dabrowski, J., Mane, A., Wenger, Ch, Lippert, G., Müssig, H.-J.

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On the epitaxy of twin-free cubic (111) praseodymium sesquioxide films on Si(111) von Schroeder, T., Zaumseil, P., Weidner, G., Wenger, Ch, Dabrowski, J., Müssig, H.-J., Storck, P.

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Dielectric properties of single crystalline PrO2(111)/Si(111) heterostructures: Amorphous interface and electrical instabilities von Seifarth, O., Walczyk, Ch, Lupina, G., Dabrowski, J., Zaumseil, P., Weidner, G., Müssig, H.-J., Schroeder, T.

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Process integration of Pr-based high- k gate dielectrics von Mane, A.U., Wenger, Ch, Lupina, G., Schroeder, T., Lippert, G., Sorge, R., Zaumseil, P., Weidner, G., Dabrowski, J., Müssig, H.-J.

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Engineered Si wafers: On the role of oxide heterostructures as buffers for the integration of alternative semiconductors von Schroeder, T., Giussani, A., Dabrowski, J., Zaumseil, P., Müssig, H.-J., Seifarth, O., Storck, P.

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Silicate layer formation at Pr2O3∕Si(001) interfaces von Schmeißer, D., Müssig, H.-J., Dąbrowski, J.

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Lattice engineering of dielectric heterostructures on Si by isomorphic oxide-on-oxide epitaxy von Schroeder, T., Costina, I., Storck, P., Wilke, A., Seifarth, O., Giussani, A., Müssig, H.-J., Zaumseil, P.

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Engineering the semiconductor/oxide interaction for stacking twin suppression in single crystalline epitaxial silicon(111)/insulator/Si(111) heterostructures von Schroeder, T, Zaumseil, P, Seifarth, O, Giussani, A, Müssig, H-J, Storck, P, Geiger, D, Lichte, H, Dabrowski, J

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Atomic-scale engineering of future high-k dynamic random access memory dielectrics: The example of partial Hf substitution by Ti in BaHfO3 von Dudek, P., Lupina, G., Kozłowski, G., Zaumseil, P., Bauer, J., Fursenko, O., Dabrowski, J., Schmidt, R., Lippert, G., Müssig, H.-J., Schroeder, T., Schmeißer, D., Zschech, E.

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Praseodymium silicate films on Si(100) for gate dielectric applications: Physical and electrical characterization von Lupina, G., Schroeder, T., Dabrowski, J., Wenger, Ch, Mane, A. U., Müssig, H.-J., Hoffmann, P., Schmeisser, D.

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