Polarization Effects in Quantum-Well [In.sub.28][Ga.sub.72]As/GaAs Heterolasers von Kulakova, L.A, Lyutetskii, A.V, Tarasov, I.S

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Comparison of AlGaInAs/InP semiconductor lasers (lambda=1450-1500 nm) with ultra-narrow and strongly asymmetric waveguides von Volkov, N. A., Svetogorov, V. N., Ryaboshtan, Yu L., Andreev, A. Yu, Yarotskaya, I., Ladugin, M. A., Padalitsa, A. A., Marmalyuk, A. A., Slipchenko, S. O., Lyutetskii, A., Veselov, D. A., Pikhtin, N. A.

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High-power AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide emitting in the spectral range 1.9−2.0 μm von Svetogorov, V.N., Ryaboshtan, Yu.L., Volkov, N.A., Ladugin, M.A., Padalitsa, A.A., Marmalyuk, A.A., Bakhvalov, K.V., Veselov, D.A., Lyutetskii, A.V., Strelets, V.A., Slipchenko, S.O., Pikhtin, N.A.

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AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide and an increased electron barrier von Svetogorov, V.N., Ryaboshtan, Yu.L., Ladugin, M.A., Padalitsa, A.A., Volkov, N.A., Marmalyuk, A.A., Slipchenko, S.O., Lyutetskii, A.V., Veselov, D.A., Pikhtin, N.A.

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10-W 4.6-μm quantum cascade lasers von Dudelev, V.V., Mikhailov, D.A., Babichev, A.V., Losev, S.N., Kognovitskaya, E.A., Lyutetskii, A.V., Slipchenko, S.O., Pikhtin, N.A., Gladyshev, A.G., Denisov, D.V., Novikov, I.I., Karachinsky, L.Ya, Kuchinskii, V.I., Egorov, A.Yu, Sokolovskii, G.S.

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InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 900−920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics von Volkov, N.A., Bagaev, T.A., Sabitov, D.R., Andreev, A.Yu, Yarotskaya, I.V., Padalitsa, A.A., Ladugin, M.A., Marmalyuk, A.A., Bakhvalov, K.V., Veselov, D.A., Lyutetskii, A.V., Rudova, N.A., Strelets, V.A., Slipchenko, S.O., Pikhtin, N.A.

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Development and study of high-power quantum-cascade lasers emitting at 4.5 - 4.6 μm von Dudelev, V.V., Mikhailov, D.A., Babichev, A.V., Savchenko, G.M., Losev, S.N., Kognovitskaya, E.A., Lyutetskii, A.V., Slipchenko, S.O., Pikhtin, N.A., Gladyshev, A.G., Denisov, D.V., Novikov, I.I., Karachinsky, L.Ya, Kuchinskii, V.I., Egorov, A.Yu, Sokolovskii, G.S.

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Semiconductor AlGaInAs/InP lasers (λ = 1450 - 1500 nm) with a strongly asymmetric waveguide von Volkov, N A, Andreev, A Yu, Yarotskaya, I V, Ryaboshtan, Yu L, Svetogorov, V N, Ladugin, M A, Padalitsa, A A, Marmalyuk, A A, Slipchenko, S O, Lyutetskii, A V, Veselov, D A, Pikhtin, N A

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Semiconductor lasers with internal wavelength selection von Zolotarev, V. V., Leshko, A. Yu, Lyutetskii, A. V., Nikolaev, D. N., Pikhtin, N. A., Podoskin, A. A., Slipchenko, S. O., Sokolova, Z. N., Shamakhov, V. V., Arsent’ev, I. N., Vavilova, L. S., Bakhvalov, K. V., Tarasov, I. S.

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Two-band lasing in epitaxially stacked tunnel-junction semiconductor lasers von Vinokurov, D. A., Ladugin, M. A., Lyutetskii, A. V., Marmalyuk, A. A., Petrunov, A. N., Pikhtin, N. A., Slipchenko, S. O., Sokolova, Z. N., Stankevich, A. L., Fetisova, N. V., Shashkin, I. S., Averkiev, N. S., Tarasov, I. S.

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