MBE growth of HgCdTe on silicon substrates for large-area infrared focal plane arrays: A review of recent progress von de Lyon, T. J., Jensen, J. E., Gorwitz, M. D., Cockrum, C. A., Johnson, S. M., Venzor, G. M.

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Electrooptical Characterization of MWIR InAsSb Detectors von D’Souza, A.I., Robinson, E., Ionescu, A.C., Okerlund, D., de Lyon, T.J., Sharifi, H., Roebuck, M., Yap, D., Rajavel, R.D., Dhar, N., Wijewarnasuriya, P.S., Grein, C.

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MBE growth of HgCdTe on silicon substrates for large format MWIR focal plane arrays von MARANOWSKI, K. D, PETERSON, J. M, JOHNSON, S. M, VARESI, J. B, CHILDS, A. C, BORNFREUND, R. E, BUELL, A. A, RADFORD, W. A, DE LYON, T. J, JENSEN, J. E

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Molecular-beam epitaxial growth and high-temperature performance of HgCdTe midwave infrared detectors von DE LYON, T. J, JENSEN, J. E, KASAI, I, VENZOR, G. M, KOSAI, K, DE BRUIN, J. B, AHLGREN, W. L

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Fabrication of high-performance large-format MWIR focal plane arrays from MBE-grown HgCdTe on 4 silicon substrates von VARESI, J. B, BORNFREUND, R. E, CHILDS, A. C, RADFORD, W. A, MARANOWSKI, K. D, PETERSON, J. M, JOHNSON, S. M, GIEGERICH, L. M, DE LYON, T. J, JENSEN, J. E

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HgCdTe/Si materials for long wavelength infrared detectors von JOHNSON, S. M, BUELL, A. A, ROSBECK, J. P, DE LYON, T. J, JENSEN, J. E, NATHAN, V, VILELA, M. F, PETERSON, J. M, VARESI, J. B, NEWTON, M. D, VENZOR, G. M, BORNFREUND, R. E, RADFORD, W. A, SMITH, E. P. G

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Molecular-beam epitaxial growth of HgCdTe infrared focal-plane arrays on silicon substrates for midwave infrared applications von de Lyon, T. J., Rajavel, R. D., Vigil, J. A., Jensen, J. E., Wu, O. K., Cockrum, C. A., Johnson, S. M., Venzor, G. M., Bailey, S. L., Kasai, I., Ahlgren, W. L., Smith, M. S.

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Spectral crosstalk by radiative recombination in sequential-mode, dual mid-wavelength infrared band hgcdte detectors von COUSSA, R. A, GALLAGHER, A. M, ROTH, J. A, WATERMAN, J. R, KOSAI, K, PHAM, L. T, PIERCE, G. K, SMITH, E. P, VENZOR, G. M, DE LYON, T. J, JENSEN, J. E, NOSHO, B. Z

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MBE Growth and Transfer of HgCdTe Epitaxial Films from InSb Substrates von de Lyon, T. J., Rajavel, R. D., Nosho, B. Z., Terterian, S., Beliciu, M. L., Patterson, P. R., Chang, D. T., Boag-O’Brien, M. F., Holden, B. T., Jacobs, R. N., Benson, J. D.

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HgCdTe focal plane arrays for dual-color mid- and long-wavelength infrared detection von SMITH, E. P. G, PHAM, L. T, COUSSA, R. A, KOSAI, K, RADFORD, W. A, GIEGERICH, L. M, EDWARDS, J. M, JOHNSON, S. M, BAUR, S. T, ROTH, J. A, NOSHO, B, DE LYON, T. J, VENZOR, G. M, JENSEN, J. E, LONGSHORE, R. E, NORTON, E. M, NEWTON, M. D, GOETZ, P. M, RANDALL, V. K, GALLAGHER, A. M, PIERCE, G. K, PATTEN, E. A

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HgCdTe composition determination using spectroscopic ellipsometry during molecular beam epitaxy growth of near-infrared avalanche photodiode device structures von DE LYON, T. J, OLSON, G. L, ROTH, J. A, JENSEN, J. E, HUNTER, A. T, JACK, BAILEY, S. L

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An Initial Investigation of Nitrogen Doping of Wide-Bandgap HgCdTe During Molecular-Beam Epitaxy Using Ar/N Plasmas von de Lyon, T.J., Rajavel, R.D., Hunter, A.T., Jensen, J.E., Jack, M.D., Bailey, S.L., Kvaas, R.E., Randall, V.K., Johnson, S.M.

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Lattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxy von DE LYON, T. J, WOODALL, J. M, GOORSKY, M. S, KIRCHNER, P. D

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High carbon doping efficiency of bromomethanes in gas source molecular beam epitaxial growth of GaAs von DE LYON, T. J, BUCHAN, N. I, KIRCHNER, P. D, WOODALL, J. M, SCILLA, G. J, CARDONE, F

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Growth and diffusion of abrupt zinc profiles in gallium arsenide and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxy von ENQUIST, P, HUTCHBY, J. A, DE LYON, T. J

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Direct growth of CdZnTe/Si substrates for large-area HgCdTe infrared focal plane arrays von JOHNSON, S. M, DE LYON, T. J, COCKRUM, C. A, HAMILTON, W. J, TUNG, T, GESSWEIN, F. I, BAUGRATZ, B. A, RUZICKA, L. M, WU, O. K, ROTH, J. A

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Direct molecular-beam epitaxial growth of ZnTe(100) and CdZnTe(100)/ZnTe(100) on Si(100) substrates von DE LYON, T. J, ROTH, J. A, WU, O. K, JOHNSON, S. M, COCKRUM, C. A

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LVM spectroscopy of carbon and carbon-hydrogen pairs in GaAs grown by MOMBE von Woodhouse, K, Newman, R C, Lyon, T J de, Woodall, J M

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MBE growth of HgCdTe avalanche photodiode structures for low-noise 1.55 μm photodetection von de Lyon, T.J, Baumgratz, B, Chapman, G, Gordon, E, Hunter, A.T, Jack, M, Jensen, J.E, Johnson, W, Johs, B, Kosai, K, Larsen, W, Olson, G.L, Sen, M, Walker, B, Wu, O.K

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Valence-band-edge shift due to doping in p+ GaAs von SILBERMAN, J. A, DE LYON, T. J, WOODALL, J. M

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