Planar double gate transistors with asymmetric independent gates von Ilicali, G., Weber, W., Rosner, W., Dreeskornfeld, L., Hartwich, J., Kretz, J., Lutz, T., Mazellier, J.-P., Stadele, M., Specht, M., Luyken, J.R., Landgraf, E., Hofmann, F., Risch, L., Kasmaier, R., Hansch, W.

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Use of LPCVD TEOS as a direct bonding material for layer transfer: densified vs. undensified von Ilicali, G., Rosner, W., Weber, W., Boz, S., Dreeskornfeld, L., Hartwich, J., Kretz, J., Luyken, J.R., Landgraf, E., Hofmann, F., Risch, L., Hansch, W.

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