Estimating the Crystallographic Structure of AlGaN/GaN Heterostructure Buffer Layers Using Symmetric and Asymmetric X-ray Schemes von Lutzau, A. V., Temper, E. M., Enisherlova, K. L.

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Formation of Precipitates in Si Implanted with 64Zn+ and 16O+ Ions von Privezentsev, V. V., Kirilenko, E. P., Goryachev, A. V., Lutzau, A. V.

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Dislocation Structure of Epitaxial Layers of AlGaN/GaN/α-Al2O3 Heterostructures Containing a GaN Layer Doped with Carbon and Iron von Rusak, T. F., Enisherlova, K. L., Lutzau, A. V., Saraykin, V. V., Korneev, V. I.

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Formation of Precipitates in Si Implanted with {sup 64}Zn{sup +} and {sup 16}O{sup +} Ions von Privezentsev, V. V., Kirilenko, E. P., Goryachev, A. V., Lutzau, A. V.

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Study of silicon implanted with zinc and oxygen ions via Rutherford backscattering spectroscopy von Privezentsev, V. V., Kulikauskas, V. S., Zatekin, V. V., Petrov, D. V., Makunin, A. V., Shemukhin, A. A., Lutzau, A. V., Putrik, A. V.

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ZnO Nanoparticle Formation in Si by Co-Implantation of Zn+ and O+ Ions von Lutzau, Alexandr V., Saraykin, Vladimir V., Privezentsev, Vladimir V., Trifonov, Alexey Yu, Petrov, Dmitrii V., Shemukhin, Andrey A.

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