Chemical–mechanical polishing of SiOC organosilicate glasses: the effect of film carbon content von Borst, Christopher L., Korthuis, Vincent, Shinn, Gregory B., Luttmer, J.D., Gutmann, Ronald J., Gill, William N.

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Integrated CVD–PVD Al plug processing for sub-half micron features von Konecni, A, Dixit, G, Russell, N.M, Luttmer, J.D, Havemann, R.H

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Nanoporous Silica as an Ultralow-k Dielectric von Jin, Changming, Luttmer, J.D., Smith, Douglas M., Ramos, Teresa A.

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Characterization and aluminum metallization of a parylene AF-4 surface von Sutcliffe, R, Lee, W.W, Gaynor, J.F, Luttmer, J.D, Martini, D, Kelber, J, Plano, M.A

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Integrated barrier/plug fill schemes for high aspect ratio Gb DRAM contact metallization von Chen, Yu-Pei, Dixit, Girish A, Lu, Jiong-Ping, Hsu, Wei-Yung, Konecni, Anthony J, Luttmer, J.D, Havemann, Robert H

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A novel process for fabricating conformal and stable TiN-based barrier films von LU, J. P, HSU, W. Y, HONG, Q. Z, DIXIT, G. A, LUTTMER, J. D, HAVEMANN, R. H, MAGEL, L. K

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Thermal stability of Al/barrier/TiSix multilayer structures von LU, J. P, HSU, W. Y, HONG, Q. Z, DIXIT, G. A, LUTTMER, J. D, HAVEMANN, R. H, CHEN, P. J, TSAI, H. L, MAGEL, L. K

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Thermal stability of Al/barrier/TiSi x multilayer structures von Lu, J.P, Hsu, W.Y, Hong, Q.Z, Dixit, G.A, Luttmer, J.D, Havemann, R.H, Chen, P.J, Tsai, H.L, Magel, L.K

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Electrode materials for hydrobromic acid electrolysis in Texas Instruments' solar chemical converter von LUTTMER, J. D, KONRAD, D, TRACHTENBERG, I

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Performance Predictions for Solar‐Chemical Converters Based on Photoelectrochemical I‐V Curves von Luttmer, J. D., Trachtenberg, Isaac

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Performance predictions for solar-chemical convertors by computer simulation von LUTTMER, J. D, TRACHTENBERG, I

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Interconnection structure in semiconductor devices and method for making the same von LUTTMER, J.D, JIN, CHANGMING, JIANG, QING-TANG

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On the reported emission from the T 2 state during ECL of 9,10-diphenylanthracene von Luttmer, J.D., Bard, Allen J.

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Interconnection structure in semiconductor devices and method for making the same von LUTTMER, J.D, JIN, CHANGMING, JIANG, QING-TANG

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On the reported emission from the T2 state during ECL of 9,10-diphenylanthracene von Luttmer, J.D., Bard, Allen J.

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Annealing impact on damascene Cu resistivity and microstructures von Qing-Tang Jiang, Ming-Hsing Tsai, Frank, A., Parihar, V., Nowell, M., Augur, R.A., Havemann, R.H., Luttmer, J.D.

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FSG process development for copper/damascene technology von Martin, J.S., Taylor, K.J., Luttmer, J.D., Ralston, A.K.R., West, J.A., Bonifield, T.D., Mickler, E.M., Bolnedi, S., Adams, C.T., Chew, K.-H., Bayman, A., van Schravendijk, B.

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Understanding and eliminating defects in electroplated Cu films von Lu, J.P., Chen, L., Gonzalez, D., Guo, H.L., Rose, D.J., Marudachalam, M., Hsu, W.U., Liu, H.Y., Cataldi, F., Chatterjee, B., Smith, P.B., Holverson, P., Guldi, R.L., Russell, N.M., Shinn, G., Zuhoski, S., Luttmer, J.D.

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A comparison of TiN processes for CVD W/TiN gate electrode on 3 nm gate oxide von Yang, H., Brown, G.A., Hu, J.C., Lu, J.P., Kraft, R., Rotondaro, A.L.P., Hattangady, S.V., Chen, I.-C., Luttmer, J.D., Chapman, R.A., Chen, P.J., Tsai, H.L., Amirhekmat, B., Magel, L.K.

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Comparative evaluation of gap-fill dielectrics in shallow trench isolation for sub-0.25 /spl mu/m technologies von Nag, S., Chatterjee, A., Taylor, K., Ali, I., O'Brien, S., Aur, S., Luttmer, J.D., Chen, I.C.

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