Estimation method for bit upset ratio of NAND flash memory induced by heavy ion irradiation von Sheng, Jiangkun, Qiu, Mengtong, Xu, Peng, Ding, Lili, Luo, Yinhong, Yao, Zhibin, Zhang, Fengqi, Gou, Shilong, Wang, Zujun, Xue, Yuanyuan

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Mutual interference induced by single event effects in CMOS circuits von Ding, Lili, Chen, Wei, Wang, Tan, Zhang, Fengqi, Luo, Yinhong, Yang, Guo-Qing

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Bit upset and performance degradation of NAND flash memory induced by total ionizing dose effects von Jiangkun Sheng, Peng Xu, Mengtong Qiu, Yinhong Luo, Lili Ding, Zhibin Yao, Baoping He, Shilong Gou, Wuying Ma

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Single-Event Multiple Transients in Conventional and Guard-Ring Hardened Inverter Chains Under Pulsed Laser and Heavy-Ion Irradiation von Rongmei Chen, Fengqi Zhang, Wei Chen, Lili Ding, Xiaoqiang Guo, Chen Shen, Yinhong Luo, Wen Zhao, Lisang Zheng, Hongxia Guo, Yinong Liu, Fleetwood, Daniel M.

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Single event transient characterization of SiGe HBT by SPA experiment and 3-D process simulation von Pan, XiaoYu, Guo, HongXia, Feng, YaHui, Liu, YiNong, Zhang, JinXin, Li, Zhuang, Luo, YinHong, Zhang, FengQi, Wang, Tan, Zhao, Wen, Ding, LiLi, Xu, JingYan

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Proton-induced single-event effect and influence of annealing on multiple feature size NAND flash memory von Peng, Cong, Chen, Wei, Luo, Yinhong, Zhang, Fengqi, Tang, Xiaobin, Guo, Xiaoqiang, Sheng, Jiangkun, Ding, Lili, Wang, Zibo

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Influence of the STI on Single-Event Transients in Bulk FinFETs von Lu, Chao, Chen, Wei, Luo, Yinhong, Ding, Lili, Zhang, Fengqi

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Full-stack vulnerability analysis of the cloud-native platform von Zeng, Qingyang, Kavousi, Mohammad, Luo, Yinhong, Jin, Ling, Chen, Yan

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The Influence of Ion Track Characteristics on Single-Event Upsets and Multiple-Cell Upsets in Nanometer SRAM von Luo, Yinhong, Zhang, Fengqi, Chen, Wei, Ding, Lili, Wang, Tan

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Impact of Total Ionizing Dose on Low Energy Proton Single Event Upsets in Nanometer SRAM von Luo, Yinhong, Zhang, Fengqi, Pan, Xiaoyu, Guo, Hongxia, Wang, Yuanming

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Low-energy proton-induced single event effect in NAND flash memories von Peng, Cong, Chen, Wei, Luo, Yinhong, Zhang, Fengqi, Tang, Xiaobin, Wang, Zibo, Ding, Lili, Guo, Xiaoqiang

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Modeling the Dependence of Single-Event Transients on Strike Location for Circuit-Level Simulation von Ding, Lili, Chen, Wei, Wang, Tan, Chen, Rongmei, Luo, Yinhong, Zhang, Fengqi, Pan, Xiaoyu, Sun, Huabo, Chen, Lei

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A Statistical Method for MCU Extraction Without the Physical-to-Logical Address Mapping von Wang, Xun, Ding, Lili, Luo, Yinhong, Chen, Wei, Zhang, Fengqi, Guo, Xiaoqiang

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New method for predicting heavy ion-induced SEE cross-section based on proton experimental data von Chen, Zhaoqun, Chen, Wei, Luo, Yinhong, Tang, Xiaobin, Zhang, Fengqi, Hu, Yang, Guo, Xiaoqiang, Yang, Huajin, Ding, Lili

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Analyzing single event upset on Kintex-7 Field-Programmable-Gate-Array with random fault injection method von Wang, Zibo, Chen, Wei, Yao, Zhibin, Zhang, Fengqi, Luo, Yinhong, Tang, Xiaobin, Peng, Cong, Ding, Lili, Guo, Xiaoqiang

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Optimized Simulation Analysis for Single Event Transient in Nanoscale Logical Cells von WANG Tan,  DING Lili,  LUO Yinhong,  ZHAO Wen,  ZHANG Fengqi,  XU Jingyan

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SRAM single event upset calculation and test using protons in the secondary beam in the BEPC von 王园明 郭红霞 张凤祁 张科营 陈伟 罗尹虹 郭晓强

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Proton-induced single-event effects on 28 nm Kintex-7 FPGA von Wang, Zibo, Chen, Wei, Yao, Zhibin, Zhang, Fengqi, Luo, Yinhong, Tang, Xiaobin, Guo, Xiaoqiang, Ding, Lili, Peng, Cong

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Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation von Pan, Xiaoyu, Guo, Hongxia, Luo, Yinhong, Zhang, Fengqi, Ding, Lili

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Modeling the impact of well contacts on SEE response with bias-dependent Single-Event compact model von Ding, Lili, Chen, Wei, Guo, Hongxia, Wang, Tan, Chen, Rongmei, Luo, Yinhong, Zhang, Fengqi, Pan, Xiaoyu

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