A Transconductance-Based Extraction Method for Thermal Resistance in GaN HEMTs von Luo, Haorui, Guo, Yongxin

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Fast and Accurate Temperature-Dependent Current Modeling of HBTs Using the Dimension Reduction Method von Hu, Wenrui, Huang, Andong, Luo, Haorui, Guo, Yong-Xin

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A Neural Network-Based Hybrid Physical Model for GaN HEMTs von Luo, Haorui, Yan, Xu, Zhang, Jingyuan, Guo, Yongxin

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An Efficient Transistor-Model-Assisted Layout Synthesis Approach Using Improved Implicit Space Mapping for High-Performance MMIC PAs von Zhang, Jingyuan, Yan, Xu, Luo, Haorui, Guo, Yongxin

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Analysis and Modeling of the Temperature-Dependent Nonlinearity of Intrinsic Capacitances in AlGaN/GaN HEMTs von Luo, Haorui, Zhong, Zheng, Hu, Wenrui, Guo, Yongxin

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The Charge-Based Flicker Noise Model for HEMTs von Luo, Haorui, Yan, Xu, Hu, Wenrui, Guo, Yongxin

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Investigation and Modeling of Scalability in ISV and OSV GaN HEMTs von Luo, Haorui, Zheng, Jiaxin, Guo, Yongxin

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On large-signal modeling of GaN HEMTs: past, development and future von Luo, Haorui, Hu, Wenrui, Guo, Yongxin

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A Rapid Matching Network Layout Synthesis and Optimization Method for High-Performance MMIC PAs Using Modified Implicit Space Mapping von Zhang, Jingyuan, Yan, Xu, Luo, Haorui, Zhang, Hao, Guo, Yongxin

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An Accurate Neural Network-Based Consistent Gate Charge Model for GaN HEMTs by Refining Intrinsic Capacitances von Hu, Wenrui, Luo, Haorui, Yan, Xu, Guo, Yong-Xin

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A Compact 1.0-12.5-GHz LNA MMIC With 1.5-dB NF Based on Multiple Resistive Feedback in 0.15- \mu m GaAs pHEMT Technology von Yan, Xu, Zhang, Jingyuan, Luo, Haorui, Gao, Si-Ping, Guo, Yongxin

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A 9-to-42-GHz High-Gain Low-Noise Amplifier Using Coupled Interstage Feedback in 0.15- \mu m GaAs pHEMT Technology von Yan, Xu, Luo, Haorui, Zhang, Jingyuan, Gao, Si-Ping, Guo, Yongxin

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Design and Analysis of a Cascode Distributed LNA With Gain and Noise Improvement in 0.15-μm GaAs pHEMT Technology von Yan, Xu, Luo, Haorui, Zhang, Jingyuan, Zhang, Hao, Guo, Yongxin

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A simplification method for capacitance models in AlGaN/GaN high electron mobility transistors under large drain voltage using channel analysis von Luo, Haorui, Zhang, Hao, Hu, Wenrui, Guo, Yongxin

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Chromatin assembly factor 1B critically controls the early development but not function acquisition of invariant natural killer T cells in mice von Xu, Yu, Ma, Junwei, Luo, Haorui, Shi, Yaohuang, Liu, Haifeng, Sun, Ao, Xu, Chenqi, Ji, Hongbin, Liu, Xiaolong

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Laboratory instrument frame von LUO HAORUI

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Simplification method of experiential capacitance model of gallium nitride high-electron-mobility transistor under high drain-source voltage condition and application of simplifica... von GUO JIAN, LUO HAORUI, YAO HONG

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Flicker noise model establishing method based on MIT high-electron-mobility transistor model and application thereof von GUO JIAN, LUO HAORUI, YAO HONG

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A bat MERS-like coronavirus circulates in pangolins and utilizes human DPP4 and host proteases for cell entry von Chen, Jing, Yang, Xinglou, Si, Haorui, Gong, Qianchun, Que, Tengcheng, Li, Jing, Li, Yang, Wu, Chunguang, Zhang, Wei, Chen, Ying, Luo, Yun, Zhu, Yan, Li, Bei, Luo, Dongsheng, Hu, Ben, Lin, Haofeng, Jiang, Rendi, Jiang, Tingting, Li, Qian, Liu, Meiqin, Xie, Shizhe, Su, Jia, Zheng, Xiaoshuang, Li, Ang, Yao, Yulin, Yang, Yong, Chen, Panyu, Wu, Aiqiong, He, Meihong, Lin, Xinhua, Tong, Yigang, Hu, Yanling, Shi, Zheng-Li, Zhou, Peng

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General Expansion-Shifting Model for Reversible Data Hiding: Theoretical Investigation and Practical Algorithm Design von Wu, Haorui, Li, Xiaolong, Luo, Xiangyang, Zhang, Xinpeng, Zhao, Yao

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