Growth of III-N/graphene heterostructures in single vapor phase epitaxial process von Lundin, W.V., Zavarin, E.E., Sakharov, A.V., Zakheim, D.A., Davydov, V.Yu, Smirnov, A.N., Eliseyev, I.A., Yagovkina, M.A., Brunkov, P.N., Lundina, E.Yu, Markov, L.K., Tsatsulnikov, A.F.

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High growth rate MOVPE of Al(Ga)N in planetary reactor von Lundin, W.V., Nikolaev, A.E., Yagovkina, M.A., Brunkov, P.N., Rozhavskaya, M.M., Ber, B.Ya, Kazantsev, D.Yu, Tsatsulnikov, A.F., Lobanova, A.V., Talalaev, R.A.

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Temperature-dependent luminescent properties of dual-wavelength InGaN LEDs von Arteev, D.S., Sakharov, A.V., Nikolaev, A.E., Lundin, W.V., Tsatsulnikov, A.F.

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InGaN/GaN heterostructures grown by submonolayer deposition von Tsatsulnikov, A. F., Lundin, W. V., Zavarin, E. E., Sakharov, A. V., Musikhin, Yu. G., Usov, S. O., Mizerov, M. N., Cherkashin, N. A.

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Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region von Tsatsulnikov, A. F., Lundin, W. V., Zavarin, E. E., Nikolaev, A. E., Sakharov, A. V., Rozhavskaya, M. M., Usov, S. O., Brunkov, P. N., Synitsin, M. A., Davydov, D. V., Mizerov, M. N., Cherkashin, N. A.

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Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes von Tsatsulnikov, A. F., Lundin, W. V., Sakharov, A. V., Zavarin, E. E., Usov, S. O., Nikolaev, A. E., Cherkashin, N. A., Ber, B. Ya, Kazantsev, D. Yu, Mizerov, M. N., Park, Hee Seok, Hytch, M., Hue, F.

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The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes von Sizov, V. S., Tsatsulnikov, A. F., Sakharov, A. V., Lundin, W. V., Zavarin, E. E., Cherkashin, N. A., Hÿtch, M. J., Nikolaev, A. E., Mintairov, A. M., He, Yan, Merz, J. L.

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Study of silicon nitride deposition in III-N MOVPE reactors von Lundin, W.V., Rodin, S.N., Zavarin, E.E., Sakharov, A.V., Zakheim, D.A., Nikolaev, A.E., Tsatsulnikov, A.F.

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Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes von Lundin, W. V., Zavarin, E. E., Sinitsyn, M. A., Sakharov, A. V., Usov, S. O., Nikolaev, A. E., Davydov, D. V., Cherkashin, N. A., Tsatsulnikov, A. F.

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Formation of composite InGaN/GaN/InAlN quantum dots von Tsatsul’nikov, A. F., Zavarin, E. E., Kryzhanovskaya, N. V., Lundin, W. V., Saharov, A. V., Usov, S. O., Brunkov, P. N., Goncharov, V. V., Cherkashin, N. A., Hytch, M.

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Effects of proton implantation on electrical and recombination properties of n-GaN von Polyakov, A.Y, Usikov, A.S, Theys, B, Smirnov, N.B, Govorkov, A.V, Jomard, F, Shmidt, N.M, Lundin, W.V

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Study of GaN doping with carbon from propane in a wide range of MOVPE conditions von Lundin, W.V., Sakharov, A.V., Zavarin, E.E., Kazantsev, D.Yu, Ber, B.Ya, Yagovkina, M.A., Brunkov, P.N., Tsatsulnikov, A.F.

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Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes von Barettin, Daniele, Maur, Matthias Auf der, Carlo, Aldo di, Pecchia, Alessandro, Tsatsulnikov, Andrei F, Sakharov, Alexei V, Lundin, Wsevolod V, Nikolaev, Andrei E, Usov, Sergey O, Cherkashin, Nikolay, Hÿtch, Martin J, Karpov, Sergey Yu

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Fast AlGaN growth in a whole composition range in planetary reactor von Lundin, W.V., Nikolaev, A.E., Rozhavskaya, M.M., Zavarin, E.E., Sakharov, A.V., Troshkov, S.I., Yagovkina, M.A., Tsatsulnikov, A.F.

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Deep centers spectra and scanning electron microscope studies of p-GaN films prepared by metallorganic chemical vapor deposition on sapphire von Polyakov, A.Y., Smirnov, N.B., Govorkov, A.V., Usikov, A.S., Shmidt, N.M., Lundin, W.V.

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Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation von Tikhomirov, V. G., Zemlyakov, V. E., Volkov, V. V., Parnes, Ya. M., Vyuginov, V. N., Lundin, W. V., Sakharov, A. V., Zavarin, E. E., Tsatsulnikov, A. F., Cherkashin, N. A., Mizerov, M. N., Ustinov, V. M.

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Raman Spectroscopy as a Tool for Characterization of Strained Hexagonal GaN/AlxGa1-xN Superlattices von Davydov, V.Yu, Smirnov, A.N., Goncharuk, I.N., Kyutt, R.N., Scheglov, M.P., Baidakova, M.V., Lundin, W.V., Zavarin, E.E., Smirnov, M.B., Karpov, S.V., Harima, H.

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Hydrogen effects in III-nitride MOVPE von Yakovlev, E.V., Talalaev, R.A., Segal, A.S., Lobanova, A.V., Lundin, W.V., Zavarin, E.E., Sinitsyn, M.A., Tsatsulnikov, A.F., Nikolaev, A.E.

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Elastic strains and delocalized optical phonons in AlN/GaN superlattices von Pankin, D. V., Smirnov, M. B., Davydov, V. Yu, Smirnov, A. N., Zavarin, E. E., Lundin, W. V.

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Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice von Lundin, W.V., Nikolaev, A.E., Sakharov, A.V., Zavarin, E.E., Valkovskiy, G.A., Yagovkina, M.A., Usov, S.O., Kryzhanovskaya, N.V., Sizov, V.S., Brunkov, P.N., Zakgeim, A.L., Cherniakov, A.E., Cherkashin, N.A., Hytch, M.J., Yakovlev, E.V., Bazarevskiy, D.S., Rozhavskaya, M.M., Tsatsulnikov, A.F.

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