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    Effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAIn heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis

    Effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAIn heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transisto... von Tsatsulnikov, A.F, Lundin, V.W, Zavarin, E.E, Yagovkina, M.A, Sakharov, A.V, Usov, S.O, Zemlyakov, V.E, Egorkin, V.I, Bulashevich, K.A, Karpov, S.Yu, Ustinov, V.M

    Veröffentlicht in Semiconductors (Woodbury, N.Y.)

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