Service network design for freight railway transportation: the Italian case von Lulli, G, Pietropaoli, U, Ricciardi, N

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Upper Limb's Injuries in Agriculture: A Systematic Review von Mucci, Nicola, Traversini, Veronica, Lulli, Lucrezia G., Baldassarre, Antonio, Galea, Raymond P., Arcangeli, Giulio

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International Atomic Energy Agency intercomparison of ion beam analysis software von Barradas, N.P., Arstila, K., Battistig, G., Bianconi, M., Dytlewski, N., Jeynes, C., Kótai, E., Lulli, G., Mayer, M., Rauhala, E., Szilágyi, E., Thompson, M.

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A multi-period TSP with stochastic regular and urgent demands von Andreatta, G., Lulli, G.

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Summary of “IAEA intercomparison of IBA software” von Barradas, N.P., Arstila, K., Battistig, G., Bianconi, M., Dytlewski, N., Jeynes, C., Kótai, E., Lulli, G., Mayer, M., Rauhala, E., Szilágyi, E., Thompson, M.

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Radiation enhanced silicon self-diffusion and the silicon vacancy at high temperatures von Bracht, H, Pedersen, J Fage, Zangenberg, N, Larsen, A Nylandsted, Haller, E E, Lulli, G, Posselt, M

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Two-Dimensional Simulation of Undermask Penetration in 4H-SiC Implanted With \hbox^ Ions von Lulli, G

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A Branch-and-Price Algorithm for Multistage Stochastic Integer Programming with Application to Stochastic Batch-Sizing Problems von Lulli, Guglielmo, Sen, Suvrajeet

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Atomistic simulation of ion channeling in heavily doped Si:As von Satta, A., Albertazzi, E., Bianconi, M., Lulli, G., Balboni, S., Colombo, L.

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Structural characterization and modeling of damage accumulation in In implanted Si von Lulli, G., Bianconi, M., Parisini, A., Napolitani, E.

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Ion-channeling analysis of As relocation in heavily doped Si:As irradiated with high-energy ions von Lulli, G., Albertazzi, E., Bianconi, M., Ferri, M.

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Channeling characterization of defects in silicon: an atomistic approach von Bianconi, M., Albertazzi, E., Balboni, S., Colombo, L., Lulli, G., Satta, A.

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Ion implantation induced swelling in 6H-SiC von Nipoti, R., Albertazzi, E., Bianconi, M., Lotti, R., Lulli, G., Cervera, M., Carnera, A.

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Determination of He electronic energy loss in crystalline Si by Monte-Carlo simulation of Rutherford backscattering–channeling spectra von Lulli, G, Albertazzi, E, Bianconi, M, Bentini, G.G, Nipoti, R, Lotti, R

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Analysis of ion implanted silicon by RBS-channeling: influence of the damage model von Bianconi, M., Albertazzi, E., Balboni, S., Lulli, G.

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Stopping power of SiO2 for 0.2–3.0 MeV He ions von Pascual-Izarra, C, Bianconi, M, Lulli, G, Summonte, C

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Damage profiles in high-energy As implanted Si von Lulli, G., Bianconi, M., Parisini, A., Sama, S., Servidori, M.

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Computer simulation of ion channeling in Si containing structurally relaxed point defects von Lulli, G., Albertazzi, E., Bianconi, M., Balboni, S.

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Influence of electron-beam parameters on the radiation-induced formation of graphitic onions von Lulli, G, Parisini, A, Mattei, G

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Investigation of heavily damaged ion implanted Si by atomistic simulation of Rutherford backscattering channeling spectra von Lulli, G., Albertazzi, E., Bianconi, M., Satta, A., Balboni, S., Colombo, L., Uguzzoni, A.

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