The effects of fluorine on parametrics and reliability in a 0.18-μm 3.5/6.8 nm dual gate oxide CMOS technology von Hook, T B, Adler, E, Guarin, F, Lukaitis, J, Rovedo, N, Schruefer, K

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Reliability characterization of 32nm high-k metal gate SOI technology with embedded DRAM von Mittl, S., Swift, A., Wu, E., Ioannou, D., Fen Chen, Massey, G., Rahim, N., Hauser, M., Hyde, P., Lukaitis, J., Rauch, S., Saroop, S., Yanfeng Wang

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NBTI-channel hot carrier effects in PMOSFETs in advanced CMOS technologies von La Rosa, G., Guarin, F., Rauch, S., Acovic, A., Lukaitis, J., Crabbe, E.

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The effects of fluorine on parametrics and reliability in a 0.18-/spl mu/m 3.5/6.8 nm dual gate oxide CMOS technology von Hook, T.B., Adler, E., Guarin, F., Lukaitis, J., Rovedo, N., Schruefer, K.

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The effects of fluorine on parametrics and reliability in a 0.18-[mu]m 3.5/6.8 nm dual gate oxide CMOS technology von Hook, T.B, Adler, E, Guarin, F, Lukaitis, J, Rovedo, N, Schruefer, K

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The effects of fluorine on parametrics and reliability in a0.18-mu m 3.5/6.8 nm dual gate oxide CMOS technology von Hook, T B, Adler, E, Guarin, F, Lukaitis, J, Rovedo, N, Schruefer, K

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Electrically Programmable Fuses for Analog and Mixed Signal Applications in Silicon Germanium BiCMOS Technologies von Gebreselasie, E.G., Voldman, S.H., He, Z. X., Coolbaugh, D., Rassel, R.M., Kirihata, T., Paganini, A., Cox, C.G., Mongeon, S.A., St. Onge, S.A., Dunn, J.S., Halbach, R.E., Lukaitis, J.M.

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A 0.24 μm SiGe BiCMOS technology featuring 6.5V CMOS, fT/fMAX of 15/14 GHz VPNP, and fT/fMAX of 60/125 GHz HBT von Candra, P., Dahlstrom, M., Zierak, M., Voegeli, B., Watson, K., Gray, P., He, Z.X., Rassel, R.M., Von Bruns, S., Schmidt, N., Camillo-Castillo, R., Previty-Kelly, R., Gautsch, M., Norris, A., Gordon, M., Chapman, P., Hershberger, D., Lukaitis, J., Feilchenfeld, N., Joseph, A., St. Onge, S.A., Dunn, J.

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A 0.18um Dual Gate (3.5nm/6.8nm) CMOS Technology with Copper Metallurgy for Logic, SRAM, and Analog Applications von Agarwala, B., Armacost, M., Biesemans, S., Burrell, L., Chen, B., Han, K., Harmon, D., Heidenreich, J., Holloway, K., Hook, T.B., Kapur, S., Kebede, T., Kiesling, D., Kim, P., Matusiewicz, G., Lukaitis, J., Nguyen, P., Prabhakara, N., Rauch, S., Rovedo, N., Saraf, L., Slinkman, J., Tang, H., Wong, R., Yankee, S., Allers, K., Augustin, A., Brase, G., Demm, E., Derby, C., Friese, G., Grellner, F., Kaltalioglu, E., Hoinkis, M., Lin, C., Mahnkopf, R., Prigge, O., Schafbauer, T., Schiml, T., Schruefer, K., Srinivasan, S., Stetter, M., Unger, G., Zoeller, R.

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Method and circuit for element wearout recovery von La Rosa, Giuseppe, Lukaitis, Joseph M, Katsetos, Anastasios A, Rauch, III, Stewart E, Wang, Ping-Chuan, Boffoli, Stephen P, Guarin, Fernando J, Lawhorn, B. B. (Bob)

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Method and circuit for element wearout recovery von LUKAITIS JOSEPH M, BOFFOLI STEPHEN P, GUARIN FERNANDO J, LAWHORN B. B. (BOB), WANG PINGUAN, RAUCH, III STEWART E, LA ROSA GIUSEPPE, KATSETOS ANASTASIOS A

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Method and circuit for element wearout recovery von LUKAITIS JOSEPH M, BOFFOLI STEPHEN P, GUARIN FERNANDO J, LAWHORN B. B., ROSA GIUSEPPE L, WANG PINGUAN, RAUCH STEWART E.III, KATSETOS ANASTASIOS A

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