Activation of ultrathin SrTiO3 with subsurface SrRuO3 for the oxygen evolution reaction von Akbashev, A R, Zhang, L, Mefford, J T, Park, J, Butz, B, Luftman, H, Chueh, W C, Vojvodic, A

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Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon von Stolk, P. A., Gossmann, H.-J., Eaglesham, D. J., Jacobson, D. C., Rafferty, C. S., Gilmer, G. H., Jaraíz, M., Poate, J. M., Luftman, H. S., Haynes, T. E.

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Activation of ultrathin SrTiO3 with subsurface SrRuO3 for the oxygen evolution reactionElectronic supplementary information (ESI) available. See DOI: 10.1039/c8ee00210j von Akbashev, A. R, Zhang, L, Mefford, J. T, Park, J, Butz, B, Luftman, H, Chueh, W. C, Vojvodic, A

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The interstitial fraction of diffusivity of common dopants in Si von Gossmann, H.-J., Haynes, T. E., Stolk, P. A., Jacobson, D. C., Gilmer, G. H., Poate, J. M., Luftman, H. S., Mogi, T. K., Thompson, M. O.

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Activation of ultrathin SrTiO 3 with subsurface SrRuO 3 for the oxygen evolution reaction von Akbashev, A. R., Zhang, L., Mefford, J. T., Park, J., Butz, B., Luftman, H., Chueh, W. C., Vojvodic, A.

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Doping of Si thin films by low-temperature molecular beam epitaxy von GOSSMANN, H.-J, UNTERWALD, F. C, LUFTMAN, H. S

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Trap-limited interstitial diffusion and enhanced boron clustering in silicon von Stolk, P. A., Gossmann, H.-J., Eaglesham, D. J., Jacobson, D. C., Poate, J. M., Luftman, H. S.

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Boron diffusion in strained Si1-xGex epitaxial layers von MORIYA, N, FELDMAN, L. C, LUFTMAN, H. S, KING, C. A, BEVK, J, FREER, B

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Oxidation enhanced diffusion in Si B-doping superlattices and Si self-interstitial diffusivities von GOSSMANN, H.-J, RAFFERTY, C. S, LUFTMAN, H. S, UNTERWALD, F. C, BOONE, T, POATE, J. M

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Beryllium δ doping of GaAs grown by molecular beam epitaxy von SCHUBERT, E. F, KUO, J. M, KOPF, R. F, LUFTMAN, H. S, HOPKINS, L. C, SAUER, N. J

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Practice Guidelines In Child Custody Evaluations for Licensed Clinical Social Workers von Luftman, Virginia H, Veltkamp, Lane J, Clark, James J, Lannacone, Sharon, Snooks, Howard

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Damage to InP and InGaAsP surfaces resulting from CH4/H2 reactive ion etching von HAYES, T. R, CHAKRABARTI, U. K, BAIOCCHI, F. A, EMERSON, A. B, LUFTMAN, H. S, DAUTREMONT-SMITH, W. C

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Effect of H on Si molecular-beam epitaxy von EAGLESHAM, D. J, UNTERWALD, F. C, LUFTMAN, H, ADAMS, D. P, YALISOVE, S. M

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Passivation of acceptors in InP resulting from CH4/H2 reactive ion etching von HAYES, T. R, DAUTREMONT-SMITH, W. C, LUFTMAN, H. S, LEE, J. W

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Point defects in Si after formation of a TiSi2 film: Evidence for vacancy supersaturation and interstitial depletion von Herner, S. B., Jones, K. S., Gossmann, H.-J., Poate, J. M., Luftman, H. S.

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Removal of GaAs surface contaminants using H2 electron cyclotron resonance plasma treatment followed by Cl2 chemical etching von HONG, M, FREUND, R. S, CHOQUETTE, K. D, LUFTMAN, H. S, MANNAERTS, J. P, WETZEL, R. C

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Complex CO-potassium interactions on Cu(100): an electron energy loss, thermal desorption, and work function study von DUBOIS, L. H, ZEGARSKI, B. R, LUFTMAN, H. S

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Influence of fluorine implant on boron diffusion: Determination of process modeling parameters von Vuong, H.-H., Gossmann, H.-J., Rafferty, C. S., Luftman, H. S., Unterwald, F. C., Jacobson, D. C., Ahrens, R. E., Boone, T., Zeitzoff, P. M.

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Spatial resolution of the capacitance-voltage profiling technique on semiconductors with quantum confinement von SCHUBERT, E. F, KOPF, R. F, KUO, J. M, LUFTMAN, H. S, GARBINSKI, P. A

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Ti/Pt/AuSn metallization scheme for bonding of InP-based laser diodes to chemical vapor deposited diamond submounts von Katz, A., Wang, K.W., Baiocchi, F.A., Dautremont-Smith, W.C., Lane, E., Luftman, H.S., Varma, R.R., Curnan, H.

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