Illumination with solid state lighting technology von Steigerwald, D.A., Bhat, J.C., Collins, D., Fletcher, R.M., Holcomb, M.O., Ludowise, M.J., Martin, P.S., Rudaz, S.L.

Volltext

High-power AlGaInN flip-chip light-emitting diodes von Wierer, J. J., Steigerwald, D. A., Krames, M. R., O’Shea, J. J., Ludowise, M. J., Christenson, G., Shen, Y.-C., Lowery, C., Martin, P. S., Subramanya, S., Götz, W., Gardner, N. F., Kern, R. S., Stockman, S. A.

Volltext

High Power LEDs - Technology Status and Market Applications von Steranka, F.M., Bhat, J., Collins, D., Cook, L., Craford, M.G., Fletcher, R., Gardner, N., Grillot, P., Goetz, W., Keuper, M., Khare, R., Kim, A., Krames, M., Harbers, G., Ludowise, M., Martin, P.S., Misra, M., Mueller, G., Mueller-Mach, R., Rudaz, S., Shen, Y.-C., Steigerwald, D., Stockman, S., Subramanya, S., Trottier, T., Wierer, J.J.

Volltext

Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes von Shen, Y. C., Wierer, J. J., Krames, M. R., Ludowise, M. J., Misra, M. S., Ahmed, F., Kim, A. Y., Mueller, G. O., Bhat, J. C., Stockman, S. A., Martin, P. S.

Volltext

Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition von Rosner, S. J., Carr, E. C., Ludowise, M. J., Girolami, G., Erikson, H. I.

Volltext

A study of parasitic reactions between NH3 and TMGa or TMAI von Chen, C. H., Liu, H., Steigerwald, D., Imler, W., Kuo, C. P., Craford, M. G., Ludowise, M., Lester, S., Amano, J.

Volltext

Metalorganic chemical vapor deposition of III-V semiconductors von LUDOWISE, M. J

Volltext

Hydrogen-decorated lattice defects in proton implanted GaN von Weinstein, Marcie G., Song, C. Y., Stavola, Michael, Pearton, S. J., Wilson, R. G., Shul, R. J., Killeen, K. P., Ludowise, M. J.

Volltext

An Infant Mortality Study of III-V Multijunction Concentrator Cells von Bosco, N., Sweet, C., Ludowise, M., Kurtz, S.

Volltext

High-Power III-Nitride Emitters for Solid-State Lighting von Krames, M.R., Bhat, J., Collins, D., Gardner, N.F., Götz, W., Lowery, C.H., Ludowise, M., Martin, P.S., Mueller, G., Mueller-Mach, R., Rudaz, S., Steigerwald, D.A., Stockman, S.A., Wierer, J.J.

Volltext

Low-resistance Ohmic conduction across compound semiconductor wafer-bonded interfaces von Kish, F. A., Vanderwater, D. A., Peanasky, M. J., Ludowise, M. J., Hummel, S. G., Rosner, S. J.

Volltext

High-efficiency InGaN MQW blue and green LEDs von Lester, S.D, Ludowise, M.J, Killeen, K.P, Perez, B.H, Miller, J.N, Rosner, S.J

Volltext

Long wavelength (λ∼1.5 μm) native-oxide-defined InAlAs-InP-InGaAsP quantum well heterostructure laser diodes von Caracci, S. J., Krames, M. R., Holonyak, N., Ludowise, M. J., Fischer-Colbrie, A.

Volltext

High-power semiconductor edge-emitting light-emitting diodes for optical low coherence reflectometry von Fouquet, J.E., Trott, G.R., Sorin, W.V., Ludowise, M.J., Braun, D.M.

Volltext

Stimulated emission in strained-layer quantum-well heterostructures von CAMRAS, M. D, BROWN, J. M, HOLONYAK, N. JR, NIXON, M. A, KALISKI, R. W, LUDOWISE, M. J, DIETZE, W. T, LEWIS, C. R

Volltext

Extremely low back facet feedback by quantum-confined Stark effect absorption in an edge-emitting light-emitting diode von Fouquet, J.E., Sorin, W.V., Trott, G.R., Ludowise, M.J., Braun, D.M.

Volltext

Analysis of wafer fusing for 1.3 μm vertical cavity surface emitting lasers von RAM, R. J, YANG, L, NAUKA, K, HOUNG, Y. M, LUDOWISE, M, MARS, D. E, DUDLEY, J. J, WANG, S. Y

Volltext

Study of Mg diffusion during metalorganic chemical vapor deposition of GaN and AlGaN von Chang, Ying-Lan, Ludowise, Mike, Lefforge, Dale, Perez, Bill

Volltext

Refractive index and electro-optic effect in compressive and tensile strained quantum wells von PAMULAPATI, J, LOEH, J. P, SINGH, J. P, BHATTACHARYA, P. K, LUDOWISE, M. J

Volltext

Continuous 300-K laser operation of strained superlattices von Ludowise, M. J., Dietze, W. T., Lewis, C. R., Camras, M. D., Holonyak, N., Fuller, B. K., Nixon, M. A.

Volltext