Ion Doping of Silicon Carbide in the Technology of High-Power Electronic Devices (Review) von Afanasev, A. V., Ilyin, V. A., Luchinin, V. V.

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Application of RIE-Technology to Control Responsivity of 4H-SiC Photodiodes von Afanasev, A. V., Zabrodskiy, V. V., Ilyin, V. A., Luchinin, V. V., Nikolaev, A. V., Serkov, A. V., Trushlyakova, V. V., Chigirev, D. A.

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Optical Control of the Parameters of Substrates in Silicon-Carbide Epitaxial Structures von Luchinin, V. V., Panov, M. F., Pavlova, M. V., Rybka, F. E.

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Analysis of the Gas Phase Epitaxy of Silicon Carbide as a Basic Process for the Technology of Power Electronics von Afanasev, A. V., Ilyin, V. A., Luchinin, V. V., Reshanov, S. A.

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Nanotechnologies in a New Technological Paradigm von Luchinin, V. V., Maltsev, P. P.

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Influence of the Preparation Technique on the Magnetic Characteristics of ε-Fe2O3-Based Composites von Testov, Dmitriy O., Gareev, Kamil G., Khmelnitskiy, Ivan K., Kosterov, Andrei, Surovitskii, Leonid, Luchinin, Victor V.

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Organismic Memristive Structures With Variable Functionality for Neuroelectronics von Andreeva, Natalia V., Ryndin, Eugeny A., Mazing, Dmitriy S., Vilkov, Oleg Y., Luchinin, Victor V.

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Neuromorphic Electronic Module Based on the Use of the Memristor Electronic-Component Base for Image Recognition von Ryndin, E. A., Mavrin, I. A., Andreeva, N. V., Luchinin, V. V.

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High-Power 4H-SiC MOSFET with an Epitaxial Buried Channel von Mikhaylov, A. I., Afanasyev, A. V., Ilyin, V. A., Luchinin, V. V., Reshanov, S. A., Schöner, A.

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Determination of Thickness and Doping Features of Multilayer 4H-SiC Structures by Frequency Analysis of IR Reflection Spectra von Afanasjev, A. V., Zubkov, V. I., Ilyin, V. A., Luchinin, V. V., Pavlova, M. V., Panov, M. F., Trushliakova, V. V., Firsov, D. D.

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Development of biosensors for express-detection of protein markers of diseases in blood using peptide biorecognition elements von Sitkov, N. O., Karasev, V. A., Luchinin, V. V., Zimina, T. M.

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Silicon-Carbide Epitaxial Structures for Betavoltaic Converters von Ilyin, V. A., Afanasyev, A. V., Luchinin, V. V., Chigirev, D. A., Serkov, A. V.

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Neuromorphic Functional Modules of a Spiking Neural Network von Ryndin, E. A., Andreeva, N. V., Luchinin, V. V., Goncharov, K. S., Raiimzhonov, V. S.

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Effect of neutron irradiation on epitaxial 4H-SiC PiN UV-photodiodes von Afanasyev, A.V., Ilyin, V.A., Luchinin, V.V., Reshanov, S.A., Schoner, A., Sergushichev, K.A., Smirnov, A.A.

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Frequency Dependence of an Electromagnetic Absorption Coefficient in Magnetic Fluid von Gareev, K. G., Luchinin, V. V., Sevost’yanov, E. N., Testov, I. O., Testov, O. A.

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30 kV Pulse Diode Stack Based on 4H-SiC von Ivanov, Boris V., Demin, Yuri S., Sergushichev, K.A., Afanasyev, Alexey V., Kardo-Sysoev, Alexey F., Schöner, Adolf, Ilyin, Vladimir A., Reshanov, Sergey A., Smirnov, A.A., Luchinin, Victor V.

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High-Voltage Ultra-Fast Pulse Diode Stack Based on 4H-SiC von Schöner, Adolf, Ivanov, Boris V., Sergushichev, K.A., Luchinin, Victor V., Afanasyev, Alexey V., Reshanov, Sergey A., Ilyin, Vladimir A., Smirnov, A.A., Kardo-Sysoev, Alexey F.

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Improvement of manufacture technology and research of actuators based on ionic polymer-metal composites von Khmelnitskiy, I K, Vereshagina, L O, Kalyonov, V E, Broyko, A P, Lagosh, A V, Luchinin, V V, Testov, D O

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Ionic Polymer Electroactive Actuators Based on the MF-4SK Ion-Exchange Membrane. Part 1. Ionic Polymer-Metal Composites von Alekseev, N. I., Bagrets, V. V., Broyko, A. P., Korlyakov, A. V., Kalenov, V. E., Luchinin, V. V., Sevostyanov, E. N., Testov, D. O., Khmelnitsky, I. K.

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High Channel Mobility 4H-SiC MOSFETs by As and P Implantation Prior to Thermal Oxidation in N2O Atmosphere von Schöner, Adolf, Knoll, Lars, Minamisawa, Renato A., Afanasyev, Alexey V., Alfieri, Giovanni, Mikhaylov, Aleksey I., Reshanov, Sergey A., Luchinin, Victor V., Bartolf, Holger

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