Comparison of drive currents in metal-oxide-semiconductor field-effect transistors made of Si, Ge, GaAs, InGaAs, and InAs channels von Lubow, Abigail, Ismail-Beigi, Sohrab, Ma, T. P.

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Band-Engineered Low PMOS VT with High-K/Metal Gates Featured in a Dual Channel CMOS Integration Scheme von Harris, H.R., Kalra, P., Majhi, P., Hussain, M., Kelly, D., Jungwoo Oh, He, D., Smith, C., Barnett, J., Kirsch, P.D., Gebara, G., Jur, J., Lichtenwalner, D., Lubow, A., Ma, T.P., Guangyu Sung, Thompson, S., Byoung Hun Lee, Hsing-Huang Tseng, Jammy, R.

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Security system incorporating a single modular unit motion sensor von Saleh, Rameez, Klemic, James Frank, Lubow, Abigail, Meras, Mark

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Security system incorporating a single modular unit motion sensor von SALEH RAMEEZ, LUBOW ABIGAIL, KLEMIC JAMES FRANK, MERAS MARK

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Security system incorporating a single modular unit motion sensor von Saleh, Rameez, Frank Klemic, James, Lubow, Abigail, Meras, Mark

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Security system incorporating a single modular unit motion sensor von SALEH RAMEEZ, LUBOW ABIGAIL, FRANK KLEMIC JAMES, MERAS MARK

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