Metal gate work function engineering using AlNx interfacial layers von Alshareef, H. N., Luan, H. F., Choi, K., Harris, H. R., Wen, H. C., Quevedo-Lopez, M. A., Majhi, P., Lee, B. H.

Volltext

Prevention of etomidate-induced myoclonus during anesthetic induction by pretreatment with dexmedetomidine von Luan, H F, Zhao, Z B, Feng, J Y, Cui, J Z, Zhang, X B, Zhu, P, Zhang, Y H

Volltext

Dual-metal gate CMOS technology with ultrathin silicon nitride gate dielectric von Yee-Chia Yeo, Qiang Lu, Ranade, P., Takeuchi, H., Yang, K.J., Polishchuk, I., Tsu-Jae King, Chenming Hu, Song, S.C., Luan, H.F., Dim-Lee Kwong

Volltext

Temperature dependence of the work function of ruthenium-based gate electrodes von Alshareef, H.N., Wen, H.C., Luan, H.F., Choi, K., Harris, H.R., Senzaki, Y., Majhi, P., Lee, B.H., Foran, B., Lian, G.

Volltext

Modulation of the work function of silicon gate electrode using thin TaN interlayers von Alshareef, H. N., Wen, H. C., Harris, H. R., Choi, K., Luan, H. F., Lysaght, P., Majhi, P., Lee, B. H., El-Bouanani, M., Ukride, V.

Volltext

Ultra thin high quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N2O oxidation of NH3-nitrided Si von SONG, S. C, LUAN, H. F, LEE, C. H, MAO, A. Y, LEE, S. J, GELPEY, J, MARCUS, S, KWONG, D. L

Volltext

Effect of Repetitive Intracutaneous Injections with Local Anesthetics and Steroids for Acute Thoracic Herpes Zoster and Incidence of Postherpetic Neuralgia von Cui, Ji-zheng, Zhang, Xiao-bao, Zhu, Pin, Zhao, Zhi-bin, Geng, Zhu-sheng, Zhang, Yun-hai, Tian, Liang, Luan, Heng-fei, Feng, Ji-ying

Volltext

Dual-metal gate technology for deep-submicron CMOS transistors von Qiang Lu, Yee Chia Yeo, Ranade, P., Takeuchi, H., Tsu-Jae King, Chenming Hu, Song, S.C., Luan, H.F., Dim-Lee Kwong

Volltext bestellen

Two silicon nitride technologies for post-SiO2 MOSFET gate dielectric von Qiang Lu, Yee Chia Yeo, Yang, K.J., Lin, R., Polishchuk, I., Tsu-Jae King, Chenming Hu, Song, S.C., Luan, H.F., Dim-Lee Kwong, Xin Guo, Zhijiong Luo, Xiewen Wang, Tso-Ping Ma

Volltext

Thermally Stable N-Metal Gate MOSFETs Using La-Incorporated HfSiO Dielectric von Alshareef, H., Harris, H., Wen, H., Park, C., Huffman, C., Choi, K., Luan, H., Majhi, P., Lee, B., Jammy, R., Lichtenwalner, D., Jur, J., Kingon, A.

Volltext

Impact of boron penetration on gate oxide reliability and device lifetime in p +-poly PMOSFETs von Kim, B.Y., Liu, I.M., Luan, H.F., Gardner, M., Fulford, J., Kwong, D.L.

Volltext

Metal gate work function engineering using Al N x interfacial layers von Alshareef, H. N., Luan, H. F., Choi, K., Harris, H. R., Wen, H. C., Quevedo-Lopez, M. A., Majhi, P., Lee, B. H.

Volltext

Modulation of the work function of silicon gate electrode using thinTaN interlayers von Alshareef, H. N., Wen, H. C., Harris, H. R., Choi, K., Luan, H. F., Lysaght, P., Majhi, P., Lee, B. H., El-Bouanani, M., Ukride, V.

Volltext

Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics von Zhong, Huicai, Heuss, Greg, Misra, Veena, Luan, Hongfa, Lee, Choong-Ho, Kwong, Dim-Lee

Volltext

Large-scale systematic study on stability of the Ds element and timing of transposition in rice [Oryza sativa] von Szeverenyi, I.(National Univ. of Singapore), Ramamoorthy, R, Teo, Z.W, Luan, H.F, Ma, Z.G, Ramachandran, S

Volltext

Ultra thin (<3 nm) high quality nitride/oxide stack gate dielectrics fabricated by in-situ rapid thermal processing von Kim, B.Y., Luan, H.F., Kwong, D.L.

Volltext

Two silicon nitride technologies for post-SiO(2) MOSFETgate dielectric von Lu, Qiang, Yeo, Yee Chia, Yang, K J, Lin, R, Polishchuk, I, King, Tsu-Jae, Hu, Chenming, Song, S C, Luan, H F, Kwong, Dim-Lee, Guo, Xin, Luo, Zhijiong, Wang, Xiewen, Ma, Tso-Ping

Volltext

Two silicon nitride technologies for post-SiO sub(2) MOSFET gate dielectric von Lu, Qiang, Chia Yeo, Yee, Yang, K J, Lin, R, Polishchuk, I, King, Tsu-Jae, Hu, Chenming, Song, S C, Luan, H F, Kwong, Dim-Lee, Guo, Xin, Luo, Zhijiong, Wang, Xiewen, Ma, Tso-Ping

Volltext

日粮中新鲜发酵豆粕对保育猪生长性能、氨气和颗粒物排放以及氮排泄的影响（英文） von Sai-sai CHENG Yuan LI Shi-jie GENG Luan-sha HU Xiong-feng FU Xin-yan HAN

Volltext

High-k gate dielectrics for sub-100 nm CMOS technology von Lee, S.J., Lee, C.H., Kim, Y.H., Luan, H.F., Bai, W.P., Jeon, T.S., Kwong, D.L.

Volltext bestellen