Characteristics of Pd/InGaP Schottky diodes hydrogen sensors von Lin, K.-W., Chen, H.-I., Chuang, H.-M., Chen, C.-Y., Lu, C.-T., Cheng, C.-C., Liu, W.-C.

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Investigation of hydrogen-sensing properties of Pd/AlGaAs-based Schottky diodes von Tsai, Yan-Ying, Lin, Kun-Wei, Lu, Chun-Tsen, Chen, Huey-Ing, Chuang, Hung-Ming, Chen, Chun-Yuan, Cheng, Chin-Chuan, Liu, Wen-Chau

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Characteristics of a new Pt/oxide/In0.49Ga0.51P hydrogen-sensing Schottky diode von Lin, Kun-Wei, Chen, Huey-Ing, Cheng, Chin-Chuan, Chuang, Hung-Ming, Lu, Chun-Tsen, Liu, Wen-Chau

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A new Pd-oxide-Al0.3Ga0.7As MOS hydrogen sensor von Lu, Chun-Tsen, Lin, Kun-Wei, Chen, Huey-Ing, Chuang, Hung-Ming, Chen, Chun-Yuan, Liu, Wen-Chau

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A hydrogen sensing Pd/InGaP metal-semiconductor (MS) Schottky diode hydrogen sensor von Lin, Kun-Wei, Chen, Huey-Ing, Lu, Chun-Tsen, Tsai, Yan-Ying, Chuang, Hung-Ming, Chen, Chun-Yuan, Liu, Wen-Chau

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A new Pt/oxide/In0.49Ga0.51P MOS Schottky diode hydrogen sensor von Liu, Wen-Chau, Lin, Kun-Wei, Chen, Huey-Ing, Wang, Chih-Kai, Cheng, Chin-Chuan, Cheng, Shiou-Ying, Lu, Chun-Tsen

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Comparative study of double ion implant Ti–salicide and pre-amorphization implant Co–salicide for ultra-large-scale integration applications von Chuang, Hung-Ming, Thei, Kong-Beng, Tsai, Sheng-Fu, Lu, Chun-Tsen, Liao, Xin-Da, Lee, Kuan-Ming, Liu, Wen-Chau

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SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME von Lo, Guang-Yu, Chang, Chung-Fu, Lu, Chun-Tsen

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Hydrogen sensing characteristics of a Pt–oxide–Al0.3Ga0.7As MOS Schottky diode von Cheng, Chin-Chuan, Tsai, Yan-Ying, Lin, Kun-Wei, Chen, Huey-Ing, Lu, Chun-Tsen, Liu, Wen-Chau

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A comprehensive study of polysilicon resistors for CMOS ULSI applications von Chuang, Hung-Ming, Thei, Kong-Beng, Tsai, Sheng-Fu, Lu, Chun-Tsen, Liao, Xin-Da, Lee, Kuan-Ming, Chen, Hon-Rung, Liu, Wen-Chau

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Effects of electrical and temperature stress on polysilicon resistors for CMOS technology applications von Thei, Kong-Beng, Chuang, Hung-Ming, Tsai, Sheng-Fu, Lu, Chun-Tsen, Liao, Xin-Da, Lee, Kuan-Ming, Liu, Wen-Chau

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SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME von Lo, Guang-Yu, Chen, Kuan-Hung, Chen, Chun-Chia, Chang, Chung-Fu, Lu, Chun-Tsen

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Semiconductor device and method for fabricating the same von Lo, Guang-Yu, Chen, Kuan-Hung, Chen, Chun-Chia, Chang, Chung-Fu, Lu, Chun-Tsen

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Comparative hydrogen sensing performances of Pd– and Pt–InGaP metal–oxide–semiconductor Schottky diodes von Tsai, Yan-Ying, Lin, Kun-Wei, Chen, Huey-Ing, Lu, Chun-Tsen, Chuang, Hung-Ming, Chen, Chun-Yuan, Liu, Wen-Chau

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SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME von Lo, Guang-Yu, Wu, Chih-Shan, Lin, Yu-Hsiang, Chang, Chung-Fu, Lu, Chun-Tsen, Chang, Wei-Hao

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SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME von Lo, Guang-Yu, Chen, Kuan-Hung, Chen, Chun-Chia, Chang, Chung-Fu, Lu, Chun-Tsen

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SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME von Lo, Guang-Yu, Chen, Kuan-Hung, Chen, Chun-Chia, Chang, Chung-Fu, Lu, Chun-Tsen

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Semiconductor device and method for fabricating the same von Lo, Guang-Yu, Chen, Kuan-Hung, Chen, Chun-Chia, Chang, Chung-Fu, Lu, Chun-Tsen

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Hydrogen sensing characteristics of a Pt–oxide–Al 0.3Ga 0.7As MOS Schottky diode von Cheng, Chin-Chuan, Tsai, Yan-Ying, Lin, Kun-Wei, Chen, Huey-Ing, Lu, Chun-Tsen, Liu, Wen-Chau

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A new Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor von Chun-Tsen Lu, Kun-Wei Lin, Huey-Ing Chen, Hung-Ming Chuang, Chun-Yuan Chen, Wen-Chau Liu

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