First-principles study of two-dimensional gallium-nitrides on van der Waals epitaxial substrate von Yayama, Tomoe, Lu, Anh Khoa Augustin, Morishita, Tetsuya, Nakanishi, Takeshi

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Topological to trivial insulating phase transition in stanene von Houssa, Michel, van den Broek, Bas, Iordanidou, Konstantina, Lu, Anh Khoa Augustin, Pourtois, Geoffrey, Locquet, Jean-Pierre, Afanas’ev, Valery, Stesmans, André

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Frank-Kasper Z16 local structures in Cu-Zr metallic glasses von Lu, Anh Khoa Augustin, Nishio, Kengo, Morishita, Tetsuya, Ohara, Koji, Lu, Zhen, Hirata, Akihiko

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Uncovering New Buckled Structures of Bilayer GaN: A First-Principles Study von Augustin Lu, Anh Khoa, Yayama, Tomoe, Morishita, Tetsuya, Spencer, Michelle J. S, Nakanishi, Takeshi

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Extraction of local structure differences in silica based on unsupervised learning von Lu, Anh Khoa Augustin, Lin, Jianbo, Futamura, Yasunori, Sakurai, Tetsuya, Tamura, Ryo, Miyazaki, Tsuyoshi

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First-principles study of two-dimensional bilayer GaN: structure, electronic properties and temperature effect von Yayama, Tomoe, Lu, Anh Khoa Augustin, Morishita, Tetsuya, Nakanishi, Takeshi

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Large-Scale 1T′-Phase Tungsten Disulfide Atomic Layers Grown by Gas-Source Chemical Vapor Deposition von Okada, Mitsuhiro, Pu, Jiang, Lin, Yung-Chang, Endo, Takahiko, Okada, Naoya, Chang, Wen-Hsin, Lu, Anh Khoa Augustin, Nakanishi, Takeshi, Shimizu, Tetsuo, Kubo, Toshitaka, Miyata, Yasumitsu, Suenaga, Kazu, Takenobu, Taishi, Yamada, Takatoshi, Irisawa, Toshifumi

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The Role of Nonidealities in the Scaling of MoS2 FETs von Verreck, Devin, Arutchelvan, Goutham, Lockhart De La Rosa, Cesar J., Leonhardt, Alessandra, Chiappe, Daniele, Lu, Anh Khoa Augustin, Pourtois, Geoffrey, Matagne, Philippe, Heyns, Marc M., De Gendt, Stefan, Mocuta, Anda, Radu, Iuliana P.

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Growth of MoS2–Nb-doped MoS2 lateral homojunctions: A monolayer p–n diode by substitutional doping von Okada, Mitsuhiro, Nagamura, Naoka, Matsumura, Tarojiro, Ando, Yasunobu, Lu, Anh Khoa Augustin, Okada, Naoya, Chang, Wen-Hsin, Nakanishi, Takeshi, Shimizu, Tetsuo, Kubo, Toshitaka, Irisawa, Toshifumi, Yamada, Takatoshi

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Universal short-range order and material dependent glass-forming ability of metallic liquids and glasses von Nishio, Kengo, Lu, Anh Khoa Augustin, Miyazaki, Takehide

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Unveiling a medium-range structural commonality of amorphous alloys von Nishio, Kengo, Lu, Anh Khoa Augustin

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Tunneling Transistors Based on MoS2/MoTe2 Van der Waals Heterostructures von Balaji, Yashwanth, Mocuta, Dan, Groeseneken, Guido, Smets, Quentin, De La Rosa, Cesar Javier Lockhart, Lu, Anh Khoa Augustin, Chiappe, Daniele, Agarwal, Tarun, Lin, Dennis H. C., Huyghebaert, Cedric, Radu, Iuliana

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On Hydrogenated Bilayer GaN: New Stable Structures along the c‑Plane, m‑Plane, or a‑Plane von Lu, Anh Khoa Augustin, Yayama, Tomoe, Morishita, Tetsuya, Nakanishi, Takeshi

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Entropy-driven docosahedral short-range order in simple liquids and glasses von Nishio, Kengo, Miyazaki, Takehide, Lu, Anh Khoa Augustin

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Toward an Understanding of the Electric Field-Induced Electrostatic Doping in van der Waals Heterostructures: A First-Principles Study von Lu, Anh Khoa Augustin, Houssa, Michel, Radu, Iuliana P, Pourtois, Geoffrey

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Entropy-driven docosahedral short-range order in simple liquids and glasses von Nishio, Kengo, Lu, Anh Khoa Augustin, Miyazaki, Takehide

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On the electrostatic control achieved in transistors based on multilayered MoS2: A first-principles study von Lu, Anh Khoa Augustin, Pourtois, Geoffrey, Luisier, Mathieu, Radu, Iuliana P., Houssa, Michel

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Low-strain Si/O superlattices with tunable electronic properties: Ab initio calculations von Nishio, Kengo, Lu, Anh Khoa Augustin, Pourtois, Geoffrey

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On the electrostatic control achieved in transistors based on multilayered MoS2: A first-principles study von Lu, Anh Khoa Augustin, Pourtois, Geoffrey, Luisier, Mathieu, Radu, Iuliana P, Houssa, Michel

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Entropy-driven docosahedral short-range order in simple liquids and glasses von Nishio, Kengo, Lu, Anh Khoa Augustin, Miyazaki, Takehide

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